Cascaded organic electroluminescent devices with improved voltage stability

• US 6,717,358 B1
• Filed: 10/09/2002
• Issued: 04/06/2004
• Est. Priority Date: 10/09/2002
• Status: Expired due to Term

• Current Assignee: Global OLED Technology LLC (LG Display Co., Ltd.)
• Original Assignee: Eastman Kodak Company
• Inventors: Comfort, Dustin L., Liao, Liang-Sheng, Tang, Ching W., Klubek, Kevin P.
• Primary Examiner(s): Patel, Ashok
• Assistant Examiner(s): HARPER, HOLLY R
• Application Number:
  US10/267,252
• Time in Patent Office: 545 Days
• Field of Search: 313/504, 313/503, 313/502, 313/506, 313/509, 257/40, 428/690, 428/917
• US Class Current: 313/504
• CPC Class Codes: H10K 50/155 comprising dopants
• CPC Class Codes: H10K 50/165 comprising dopants
• CPC Class Codes: H10K 50/19 Tandem OLEDs
• CPC Class Codes: Y10S 428/917 Electroluminescent

Abstract

A cascaded organic electroluminescent device with connecting units having improved voltage stability is disclosed. The device comprises an anode, a cathode, a plurality of organic electroluminescent units disposed between the anode and the cathode, wherein the organic electroluminescent units comprise at least a hole-transporting layer and an electron-transporting layer, and a connecting unit disposed between each adjacent organic electroluminescent unit, wherein the connecting unit comprises, in sequence, an n-type doped organic layer, an interfacial layer, and a p-type doped organic layer, and wherein the interfacial layer prevents diffusion or reaction between the n-type doped organic layer and the p-type doped organic layer.

Claims

1. A cascaded organic electroluminescent device comprising:

a) an anode;

b) a cathode;

c) a plurality of organic electroluminescent units disposed between the anode and the cathode, wherein the organic electroluminescent units comprise at least a hole-transporting layer and an electron-transporting layer; and

d) a connecting unit disposed between each adjacent organic electroluminescent unit, wherein the connecting unit comprises, in sequence, an n-type doped organic layer, an interfacial layer, and a p-type doped organic layer, and wherein the interfacial layer prevents diffusion or reaction between the n-type doped organic layer and the p-type doped organic layer.

2. The connecting unit of claim 1 wherein the interfacial layer has at least 90% optical transmission in the visible region of the spectrum.

3. The connecting unit of claim 1 wherein the interfacial layer comprises at least one material having an electron energy band gap less than 4.0 eV.

4. The connecting unit of claim 1 wherein the interfacial layer includes the stoichiometric oxides or nonstoichiometric oxides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, zinc, cadmium, gallium, thallium, silicon, germanium, lead, and antimony, or combinations thereof.

5. The connecting unit of claim 1 wherein the interfacial layer includes the stoichiometric sulfides or nonstoichiometric sulfides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, zinc, cadmium, gallium, thallium, silicon, germanium, lead, and antimony, or combinations thereof.

6. The connecting unit of claim 1 wherein the interfacial layer includes the stoichiometric selenides or nonstoichiometric selenides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, zinc, cadmium, gallium, thallium, silicon, germanium, lead, and antimony, or combinations thereof.

7. The connecting unit of claim 1 wherein the interfacial layer includes the stoichiometric nitrides or nonstoichiometric nitrides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, zinc, cadmium, gallium, thallium, silicon, germanium, lead, and antimony, or combinations thereof.

8. The connecting unit of claim 1 wherein the interfacial layer includes the stoichiometric carbides or nonstoichiometric carbides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, zinc, cadmium, gallium, thallium, silicon, germanium, lead, and antimony, or combinations thereof.

9. The connecting unit of claim 1 wherein the interfacial layer comprises at least one metallic material.

10. The connecting unit of claim 1 wherein the interfacial layer comprises at least one metallic material having a work-function higher than 4.0 eV.

11. The connecting unit of claim 1 wherein the interfacial layer has a thickness in a range of 0.1 nm to 10 nm.

12. The connecting unit of claim 1 wherein the interfacial layer has a thickness in a range of 0.1 nm to 5 nm.

13. The connecting unit of claim 1 where in the interfacial layer is produced by electron-beam evaporation.

14. The connecting unit of claim 1 where in the interfacial layer is produced by electron-beam evaporation.

15. The connecting unit of claim 1 where in the interfacial layer is produced by ion sputtering technique.