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Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding

  • US 6,720,204 B2
  • Filed: 04/11/2002
  • Issued: 04/13/2004
  • Est. Priority Date: 04/11/2002
  • Status: Active Grant
First Claim
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1. A method of bonding a wire to a metal bonding pad, comprising the steps of:

  • providing a semiconductor die structure having an exposed metal bonding pad within a chamber;

    said bonding pad having an upper surface;

    producing a hydrogen-plasma within said chamber from a plasma source;

    pre-cleaning and passivating said metal bonding pad with said hydrogen-plasma to remove any metal oxide formed on said metal bonding pad upper surface; and

    bonding a wire to said cleaned and passivated metal bonding pad while the metal bonding pad is within the hydrogen-plasma.

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