Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding
First Claim
Patent Images
1. A method of bonding a wire to a metal bonding pad, comprising the steps of:
- providing a semiconductor die structure having an exposed metal bonding pad within a chamber;
said bonding pad having an upper surface;
producing a hydrogen-plasma within said chamber from a plasma source;
pre-cleaning and passivating said metal bonding pad with said hydrogen-plasma to remove any metal oxide formed on said metal bonding pad upper surface; and
bonding a wire to said cleaned and passivated metal bonding pad while the metal bonding pad is within the hydrogen-plasma.
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Abstract
A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.
43 Citations
18 Claims
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1. A method of bonding a wire to a metal bonding pad, comprising the steps of:
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providing a semiconductor die structure having an exposed metal bonding pad within a chamber;
said bonding pad having an upper surface;
producing a hydrogen-plasma within said chamber from a plasma source;
pre-cleaning and passivating said metal bonding pad with said hydrogen-plasma to remove any metal oxide formed on said metal bonding pad upper surface; and
bonding a wire to said cleaned and passivated metal bonding pad while the metal bonding pad is within the hydrogen-plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of bonding a copper wire to a copper bonding pad, comprising the steps of:
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providing a semiconductor die structure having an exposed copper bonding pad within a chamber;
said copper bonding pad having an upper surface;
producing a hydrogen-plasma within said chamber from a plasma source;
pre-cleaning and passivating said copper bonding pad with said hydrogen-plasma to remove any copper oxide formed on said copper bonding pad upper surface; and
bonding a copper wire to said passivated copper bonding pad while the copper bonding pad is within the hydrogen-plasma. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method of bonding a copper wire to a copper bonding pad, comprising the steps of:
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providing a semiconductor die structure having an exposed copper bonding pad within a chamber;
said copper bonding pad having an upper surface;
producing a hydrogen-plasma within said chamber from a plasma source;
said hydrogen-source being selected from the group comprising NH3, H2,, N2+H2, He+H2, and Ar+H2;
pre-cleaning and passivating said copper bonding pad with said hydrogen-plasma to remove any copper oxide formed on said copper bonding pad upper surface; and
bonding a copper wire to said passivated copper bonding pad while the copper bonding pad is within the hydrogen-plasma. - View Dependent Claims (15, 16, 17, 18)
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Specification