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Structure and method for dual gate oxide thicknesses

  • US 6,720,221 B1
  • Filed: 08/30/2001
  • Issued: 04/13/2004
  • Est. Priority Date: 02/28/2000
  • Status: Expired due to Term
First Claim
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1. A method for forming gate oxides on a substrate, comprising:

  • forming a pair of gate oxides to a first thickness on the substrate;

    forming a dielectric layer on one of the pair of gate oxides, wherein the dielectric layer exhibits a higher resistance to oxidation than the gate oxides; and

    forming the other of the pair of gate oxides to a second thickness different from the first thickness.

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