Synthesis of layers, coatings or films using precursor layer exerted pressure containment
First Claim
Patent Images
1. A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and a release layer is located between the tool and the first precursor layer.
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Abstract
Systems and methods are described for synthesis of films, coatings or layers using precursor exerted pressure containment. A method includes exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.
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Citations
73 Claims
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1. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and a release layer is located between the tool and the first precursor layer. - View Dependent Claims (2, 3)
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4. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
forming a composition layer;
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate; and
coupling another precursor layer to the tool after moving.
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5. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate. - View Dependent Claims (6)
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7. A method, comprising:
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exerting a pressure between a first precursor lever that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer;
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate; and
applying an electrostatic field across the first precursor and the second precursor. - View Dependent Claims (8)
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9. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a template layer is located between the first precursor layer and the first substrate.
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10. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a surfactant is located between the first precursor layer and the first substrate.
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11. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a surfactant is located between the first precursor and the second precursor.
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12. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and an adhesion layer is located between the first precursor layer and the first substrate.
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13. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrates; and
depositing a buffer layer on the composition layer. - View Dependent Claims (14)
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15. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate, wherein modifying includes removing and a portion of the first substrate is not removed.
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16. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed from multinary compounds; and
modifying at least a part of the first substrate, wherein the film remains coupled to the second substrate, modifying includes removing and removing includes etching.
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17. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed from multinary compounds; and
modifying at least a part of the first substrate, wherein the film remains coupled to the second substrate, modifying includes removing and a portion of the first substrate is not removed.
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18. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrates;
forming a coating; and
modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein modifying includes removing and removing includes etching.
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19. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein modifying includes removing and a portion of the first substrate is not removed.
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20. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the pressure is sufficient to substantially prevent escape of vapor from the first precursor layer, the second precursor layer and the film.
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21. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a release layer is located between the tool and the first precursor layer. - View Dependent Claims (22, 23)
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24. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds;
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate; and
coupling another precursor layer to the tool after moving.
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25. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate. - View Dependent Claims (26)
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27. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the film includes copper, indium and selenide. - View Dependent Claims (28, 29)
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30. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds;
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate; and
applying an electrostatic field across the first precursor and the second precursor. - View Dependent Claims (31)
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32. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and a template layer is located between the first precursor layer and the first substrate. - View Dependent Claims (33, 34)
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35. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and a template layer is located between the second precursor layer and the second substrate.
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36. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a surfactant is located between the first precursor layer and the first substrate.
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37. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a surfactant is located between the first precursor and the second precursor.
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38. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein an adhesion layer is located between the first precursor layer and the first substrate.
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39. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate wherein the film remains coupled to the second substrate, wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.
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40. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.
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41. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate an a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition; and
the second precursor layer is coupled to the second substrate by deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition.
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42. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds;
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate; and
depositing a buffer layer on the film. - View Dependent Claims (43)
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44. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the pressure is sufficient to substantially prevent escape of vapor from the first precursor layer, the second precursor layer and the coating.
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45. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein a release layer is located between the tool and the first precursor layer. - View Dependent Claims (46, 47)
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48. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
forming a coating;
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate; and
coupling another precursor layer to the tool after moving.
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49. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate. - View Dependent Claims (50)
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51. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the coating includes copper, indium and selenide. - View Dependent Claims (52, 53)
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54. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating;
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate; and
applying an electrostatic field across the first precursor and the second precursor. - View Dependent Claims (55)
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56. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a template layer is located between the first precursor layer and the first substrate. - View Dependent Claims (57, 58)
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59. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, a template layer is located between the second precursor layer and the second substrate.
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60. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein a surfactant is located between the first precursor layer and the first substrate.
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61. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein a surfactant is located between the first precursor and the second precursor.
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62. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate forming a coating; and
moving the first substrate relative to the second substrate, wherein an adhesion layer is located between the first precursor layer and the first substrate.
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63. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a diffusion barrier layer is located between the first precursor layer and the first substrate.
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64. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a diffusion barrier layer is located between the second precursor layer and the second substrate.
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65. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein i) the coating remains coupled to the second substrate, ii) the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition, and iii) the second precursor layer is coupled to the second substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition.
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66. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating;
moving the first substrate relative to the second substrate wherein the coating remains coupled to the second substrate; and
depositing a buffer layer on the coating. - View Dependent Claims (67)
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68. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, wherein a template layer is located between the second precursor layer and the second substrate.
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69. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate, wherein modifying includes removing; and
moving includes etching.
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70. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film formed of multinary compounds remains coupled to the second substrate, wherein a template layer is located between the second precursor layer and the second substrate.
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71. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
modifying at least a part of the first substrate, wherein the film formed of multinary compounds remains coupled to the second substrate, wherein modifying includes removing; and
moving includes etching.
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72. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate, wherein a template layer is located between the second precursor layer and the second substrate.
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73. A method, comprising:
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exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, whereinmodifying includes removing; and
moving includes etching.
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Specification