Synthesis of layers, coatings or films using precursor layer exerted pressure containment

• US 6,720,239 B2
• Filed: 07/17/2002
• Issued: 04/13/2004
• Est. Priority Date: 09/20/2001
• Status: Expired due to Fees

• Current Assignee: HelioVolt Corporation
• Original Assignee: HelioVolt Corporation
• Inventors: Stanbery, Billy J.
• Primary Examiner(s): GHYKA, ALEXANDER G
• Assistant Examiner(s): GHYKA, ALEXANDER G
• Application Number:
  US10/197,052
• Publication Number:
  US 20030054582A1
• Time in Patent Office: 636 Days
• Field of Search: 438/455, 438/459, 427/359, 427/365, 427/369, 156/285, 156/312, 156/306.6, 156/306.3, 156/344, 503/261, 503/217
• US Class Current: 438/459
• CPC Class Codes: C23C 14/0005 Separation of the coating from the substrate
• CPC Class Codes: C23C 14/5846 Reactive treatment
• CPC Class Codes: C23C 14/5886 Mechanical treatment involving removal of material C23C14/588
• CPC Class Codes: C23C 14/5893 Mixing of deposited material
• CPC Class Codes: C23C 26/00 Coating not provided for in groups C23C2/00 - C23C24/00
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/0749 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 156/1111 Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]

Abstract

Systems and methods are described for synthesis of films, coatings or layers using precursor exerted pressure containment. A method includes exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

Claims

1. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and a release layer is located between the tool and the first precursor layer.

2. The method of claim 1, wherein the release layer functions as a template.

3. The method of claim 1, wherein the release layer includes at least one fluoride selected from the group consisting of CaF₂ and SrF₂.

4. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;

forming a composition layer;

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate; and

coupling another precursor layer to the tool after moving.

5. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate.

6. The method of claim 5, wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.

7. A method, comprising:

exerting a pressure between a first precursor lever that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer;

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate; and

applying an electrostatic field across the first precursor and the second precursor.

8. The method of claim 7, wherein the electrostatic field controls, at least in-part, the pressure.

9. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a template layer is located between the first precursor layer and the first substrate.

10. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a surfactant is located between the first precursor layer and the first substrate.

11. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a surfactant is located between the first precursor and the second precursor.

12. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and an adhesion layer is located between the first precursor layer and the first substrate.

13. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrates; and

depositing a buffer layer on the composition layer.

14. The method of claim 13, further comprising depositing a window layer on the buffer layer.

15. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate, wherein modifying includes removing and a portion of the first substrate is not removed.

16. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed from multinary compounds; and

modifying at least a part of the first substrate, wherein the film remains coupled to the second substrate, modifying includes removing and removing includes etching.

17. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed from multinary compounds; and

modifying at least a part of the first substrate, wherein the film remains coupled to the second substrate, modifying includes removing and a portion of the first substrate is not removed.

18. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrates;

forming a coating; and

modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein modifying includes removing and removing includes etching.

19. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein modifying includes removing and a portion of the first substrate is not removed.

20. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the pressure is sufficient to substantially prevent escape of vapor from the first precursor layer, the second precursor layer and the film.

21. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a release layer is located between the tool and the first precursor layer.

22. The method of claim 21, wherein the release layer functions as a template.

23. The method of claim 21, wherein the release layer includes at least one fluoride selected from the group consisting of CaF₂ and SrF₂.

24. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds;

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate; and

coupling another precursor layer to the tool after moving.

25. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate.

26. The method of claim 25, wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.

27. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the film includes copper, indium and selenide.

28. The method of claim 27, further comprising controlling the temperature of the second precursor layer within a range of from approximately 520°

C. to approximately 635°

C.

29. The method of claim 27, wherein the first precursor layer includes (In,Ga)y(S,Se)1-y and the second precursor layer includes CuxSe1-x.

30. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds;

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate; and

applying an electrostatic field across the first precursor and the second precursor.

31. The method of claim 30, wherein the electrostatic field controls, at least in-part, the pressure.

32. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and a template layer is located between the first precursor layer and the first substrate.

33. The method of claim 32, wherein the template layer includes copper, indium and selenide.

34. The method of claim 33, wherein the template layer includes num and sulfur.

35. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and a template layer is located between the second precursor layer and the second substrate.

36. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a surfactant is located between the first precursor layer and the first substrate.

37. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a surfactant is located between the first precursor and the second precursor.

38. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein an adhesion layer is located between the first precursor layer and the first substrate.

39. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate wherein the film remains coupled to the second substrate, wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.

40. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.

41. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate an a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and

the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition; and

the second precursor layer is coupled to the second substrate by deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition.

42. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds;

moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate; and

depositing a buffer layer on the film.

43. The method of claim 42, further comprising depositing a window layer on the buffer layer.

44. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the pressure is sufficient to substantially prevent escape of vapor from the first precursor layer, the second precursor layer and the coating.

45. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein a release layer is located between the tool and the first precursor layer.

46. The method of claim 45, wherein the release layer functions as a template.

47. The method of claim 45, wherein the release layer includes at least one fluoride selected from the group consisting of CaF₂ and SrF₂.

48. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;

forming a coating;

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate; and

coupling another precursor layer to the tool after moving.

49. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate.

50. The method of claim 49, wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.

51. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the coating includes copper, indium and selenide.

52. The method of claim 51, further comprising controlling the temperature of the second precursor layer within a range of from approximately 520°

C. to approximately 635°

C.

53. The method of claim 51, wherein the first precursor layer includes (In,Ga)y(S,Se)1-y and the second precursor layer includes CuxSe1-x.

54. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating;

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate; and

applying an electrostatic field across the first precursor and the second precursor.

55. The method of claim 54, wherein the electrostatic field controls, at least in-part, the pressure.

56. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a template layer is located between the first precursor layer and the first substrate.

57. The method of claim 56, wherein the template layer includes copper, indium and selenide.

58. The method of claim 57, wherein the template layer includes aluminum and sulfur.

59. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, a template layer is located between the second precursor layer and the second substrate.

60. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein a surfactant is located between the first precursor layer and the first substrate.

61. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein a surfactant is located between the first precursor and the second precursor.

62. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate

forming a coating; and

moving the first substrate relative to the second substrate, wherein an adhesion layer is located between the first precursor layer and the first substrate.

63. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a diffusion barrier layer is located between the first precursor layer and the first substrate.

64. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a diffusion barrier layer is located between the second precursor layer and the second substrate.

65. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein i) the coating remains coupled to the second substrate, ii) the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition, and iii) the second precursor layer is coupled to the second substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition.

66. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating;

moving the first substrate relative to the second substrate wherein the coating remains coupled to the second substrate; and

depositing a buffer layer on the coating.

67. The method of claim 66, further comprising depositing a window layer on the buffer layer.

68. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate,

wherein a template layer is located between the second precursor layer and the second substrate.

69. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate, wherein

modifying includes removing; and

moving includes etching.

70. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

moving the first substrate relative to the second substrate, wherein the film formed of multinary compounds remains coupled to the second substrate,

wherein a template layer is located between the second precursor layer and the second substrate.

71. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a film formed of multinary compounds; and

modifying at least a part of the first substrate, wherein the film formed of multinary compounds remains coupled to the second substrate, wherein

modifying includes removing; and

moving includes etching.

72. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate,

wherein a template layer is located between the second precursor layer and the second substrate.

73. A method, comprising:

exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a coating; and

modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein

modifying includes removing; and

moving includes etching.