Organic light emitters with improved carrier injection

• US 6,720,572 B1
• Filed: 06/23/2000
• Issued: 04/13/2004
• Est. Priority Date: 06/25/1999
• Status: Expired due to Fees

• Current Assignee: Penn State Research Foundation
• Original Assignee: Penn State Research Foundation
• Inventors: Jackson, Thomas N., Klauk, Hagen
• Primary Examiner(s): Eckert, George
• Assistant Examiner(s): NGUYEN, JOSEPH H
• Application Number:
  US09/602,438
• Time in Patent Office: 1,390 Days
• Field of Search: 257/24, 257/40, 257/103, 257/72, 257/59
• US Class Current: 257/40
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 50/17 Carrier injection layers
• CPC Class Codes: H10K 50/171 Electron injection layers
• CPC Class Codes: H10K 50/30 Organic light-emitting transistors
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3

Abstract

A light emitting device with improved carrier injection. The device has a layer of organic light emitting material and a layer of organic semiconductor material that are interposed between first and second contact layers. A carrier transport layer,may optionally be included between the semiconductor and light emitting layers. When used as a diode, the first and second contacts are functionally the anode and cathode. The device can also be a field effect transistor device by adding a gate contact and a gate dielectric. The first and second contacts then additionally have the function of source and drain, depending on whether the organic semiconductor material is a p-type or an n-type. Preferably, the organic semiconductor is formed with pentacene.

Claims

1. A semiconductor device comprising:

a thin film transistor and a light emitting diode that share a common layer of semiconductor material and a first electrical contact;

a second electrical contact disposed with respect to said common layer of semiconductor material such that carriers injected via one of said first and second electrical contacts into said common layer of semiconductor material are received by the other of said first and second electrical contacts without intervening removal thereof by any other electrical contact to said common layer of semiconductor material, wherein said first and second electrical contacts are one of (i) a cathode of said light emitting diode and a source of said thin film transistor, respectively, and (ii) an anode of said light emitting diode and a drain of said thin film transistor, respectively;

a layer of light emitting material disposed between said first electrical contact and said common layer of semiconductor material; and

a gate electrical contact disposed with respect to said common layer of semiconductor material so as to control said carriers in response to an applied signal.

2. The light emitting device of claim 1, wherein one of said first and second electrical contacts is at least partially transparent to light.

3. The light emitting device of claim 1, wherein said light emitting layer includes a first organic material and said common layer of semiconductor material includes a second organic material, and wherein said second organic material is selected from the group that consists of polymers and small molecule materials.

4. The light emitting device of claim 3, wherein said first electrical contact is an anode and said second electrical contact is a cathode.

5. The light emitting device of claim 4, further comprising a carrier transport layer that includes a third organic material and that is interposed between said anode and said common layer of semiconductor material.

6. The light emitting device of claim 5, wherein said first, second and third organic materials are selected from the group that consists of polymers and small molecule materials.

7. The light emitting device of claim 6, wherein one of said anode and said cathode includes a material that is at least partially transparent to light.

8. The light emitting device of claim 7, wherein said one of said anode and cathode is said anode, and wherein said material that is at least partially transparent to light is indium tin oxide.

9. The light emitting device of claim 8, wherein said cathode is metallic.

10. The light emitting device of claim 1, further comprising a layer of dielectric material that is disposed between said gate electrical contact and said first and second electrical contact.

11. The light emitting device of claim 10, wherein said common layer of semiconductor material forms a channel of a field effect transistor between said first and second electrical contacts.

12. The light emitting device of claim 11, wherein said light emitting layer is located within an electric field produced when a voltage is applied across said first and second electrical contacts.

13. The light emitting device of claim 10, further comprising a carrier transport layer that includes organic material and that is interposed between said first and second electrical contacts.

14. The light emitting device of claim 13, wherein said carrier transport layer is interposed between said common layer of semiconductor material and said light emitting layer.

15. The light emitting device of claim 14, wherein said carrier transport material is selected from the group that consists of polymers and small molecule materials.

16. The light emitting device of claim 15, wherein said dielectric layer is either silicon nitride or silicon dioxide.

17. The light emitting device of claim 13, further comprising a carrier injection layer, and wherein said light emitting layer is interposed between said common layer of semiconductor material and said carrier injection layer.

18. The light emitting device of claim 1, wherein said carriers are holes.

19. The light emitting device of claim 18, wherein said carriers are electrons.

20. A semiconductor device comprising:

a thin film transistor and a light emitting diode that share a common layer of semiconductor material;

a first electrical contact and a second electrical contact disposed with respect to said common layer of semiconductor material, wherein, when a voltage is applied to said first and second electrical contacts, carriers are injected into said common layer of semiconductor material via said first electrical contact and received by said second electrical contact without any intervening draining of said carriers from said common layer of semiconductor material via any other electrical contact, wherein said first electrical contact is a source of said thin film transistor;

a layer of light emitting material disposed between said second electrical contact and said common layer of semiconductor material; and

a gate electrical contact disposed with respect to said common layer of semiconductor material so as to control said carriers in response to an applied signal.

21. The semiconductor device of claim 20, wherein said first electrical contact is in direct contact with said common layer of semiconductor material, thereby enhancing injection of said carriers and contact with said semiconductor material.

22. The semiconductor device of claim 20, wherein said semiconductor material and said light emitting material are organic.

23. The semiconductor device of claim 20, wherein said organic light emitting material and said semiconductor material are selected from the group consisting of:

polymers and small molecule materials.

24. The semiconductor device of claim 23, wherein said semiconductor material is pentacene.

25. The semiconductor device of claim 20, wherein a layer of carrier transport material is disposed between said layer of light emitting material and one of said first and second electrical contacts.

26. The semiconductor device of claim 25, wherein said light emitting material, said semiconductor material and said carrier transport material are organic and are selected from the group consisting of:

polymers and small molecule materials.

27. The semiconductor device of claim 20, wherein at least one of said first and second electrical contacts and said gate electrical contact is at least partially transparent to light.

28. The semiconductor device of claim 20, wherein said common layer of semiconductor material has a carrier sheet density in the range of about 10¹² to about 10¹³ cm².

29. The semiconductor device of claim 20, wherein said common layer of semiconductor material has a carrier sheet density that is adjustable in the range of about 10¹² to about 10¹³ cm² by means of said signal applied to said gate electrical contact.