Optical device, surface emitting type device and method for manufacturing the same

• US 6,720,583 B2
• Filed: 09/20/2001
• Issued: 04/13/2004
• Est. Priority Date: 09/22/2000
• Status: Expired due to Term

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Ishikawa, Masayuki, Nunoue, Shin-Ya
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): Mandala, Jr., Victor A.
• Application Number:
  US09/956,084
• Publication Number:
  US 20020036295A1
• Time in Patent Office: 936 Days
• Field of Search: 257/98, 257/79, 257/80, 257/81, 257/82, 257/55, 257/103, 257/101, 257/102
• US Class Current: 257/98
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/465 with a resonant cavity structure
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/1835 Non-circular mesa
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18363 comprising air layers
• CPC Class Codes: H01S 5/209 special etch stop layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) including a plurality of semiconductor layers made of a nitride semiconductor with substantially same gaps therbetween. Further, the optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) in which a plurality of semiconductor layers made of nitride semiconductor and a plurality of organic layers made of organic material are alternately laminated.

Claims

1. An optical device comprising a reflector for reflecting light having a wavelength of λ

, said reflector including;

a laminated layer having a plurality of semiconductor layers with substantially the same interval gaps therebetween, each of said semiconductor layers being made of a first nitride semiconductor containing aluminum which has a refractive index of n₁ and having a film thickness of substantially λ

/4n₁; and

support parts being interposed between the neighboring semiconductor layers to support said semiconductor layers, each of said support parts being made of a second nitride semiconductor and having a film thickness of substantially λ

/4, said second nitride semiconductor having a lower content of aluminum than said first nitride semiconductor, the content of aluminum in said nitride semiconductor including zero.

2. An optical device according to claim 1, wherein said first nitride semiconductor is Al_xGa_1-xN(0<

×

<

1) and said second nitride semiconductor is Al_yGa_1-yN(0<

y<

x).

3. An optical device according to claim 1, wherein said first nitride semiconductor is Al_xGa_1-xN(0<

×

<

1) and said second nitride semiconductor is In_zGa_1-zN(0<

z<

1).

4. A surface emitting optical device comprising:

an active layer emitting light having a wavelength of(ë

)λ

; and

a reflector for reflecting the light emitted from said active layer, said reflector including etc.

5. A surface-emitting optical device according to claim 4, wherein said first nitride semiconductor is Al_xGa_1-xN(0<

×

<

1) and said second nitride semiconductor is Al_yGa_1-yN(0<

y<

x).

6. A surface-emitting optical device according to claim 4, wherein said first nitride semiconductor is Al_xGa_1-xN(0<

x<

1) and said second nitride semiconductor is In_nGa_1-zN(0<

z<

1).

7. A surface-emitting optical device according to claim 4, wherein said active layer is made of InGaN.