Low thermal impedance DBR for optoelectronic devices

• US 6,720,585 B1
• Filed: 01/11/2002
• Issued: 04/13/2004
• Est. Priority Date: 01/16/2001
• Status: Expired due to Term

• Current Assignee: Optical Communication Products Incorporated (KOCH Industries Incorporated)
• Original Assignee: Optical Communication Products Incorporated (KOCH Industries Incorporated)
• Inventors: Wasserbauer, John, Jackson, Andrew William, Naone, Ryan Likeke
• Primary Examiner(s): KANG, DONGHEE
• Application Number:
  US10/044,358
• Time in Patent Office: 823 Days
• Field of Search: 257/94, 257/97, 257/98, 257/102, 438/46, 438/47, 372/45, 372/46, 372/96
• US Class Current: 257/98
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/02251 using optical fibres
• CPC Class Codes: H01S 5/02461 Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment

Abstract

A low thermal impedance optoelectronic device includes an optical cavity adjacent a low thermal impedance DBR that provides improved heat dissipation and temperature performance. The thermal impedance of the DBR may be reduced by increasing the relative or absolute thickness of a layer of high thermal conductivity material relative to a layer of low thermal conductivity material for at least a portion of the mirror periods. The thermal impedance may also be reduced by increasing the distance between phonon scattering surfaces by increasing the thickness of the high thermal conductivity layer, the low thermal conductivity layer or both.

Claims

1. An optoelectronic device, comprising:

an active region adjacent a first distributed bragg reflector (DBR) comprising a plurality of mirror periods wherein each of said mirror periods comprise a first layer formed from a first material having a first thermal conductivity and a second layer formed from a second material having a second thermal conductivity that is greater than said first thermal conductivity and, wherein the optical thickness of said first layer does not equal the optical thickness of said second layer for at least a portion of the plurality of mirror periods.

2. The optoelectronic device of claim 1 wherein the optical thickness of said first layers is one fourth of a wavelength of light emitted by said optoelectronic device and wherein the optical thickness of said second layers is an odd integer multiple of one fourth of the wavelength of the light emitted by said optoelectic device, said odd integer multiple being greater than 1.

3. The optoelectronic device of claim 1 wherein the optical thickness of the second layer of at least said portion of mirror periods varies in a non-uniform fashion as a function of distance from said active region.

4. The optoelectronic device of claim 3 wherein the mirror period in closest proximity to the active region comprises the thickest second layer.

5. The optoelectronic device of claim 4 wherein the optical thickness of the second layers decreases by an integer multiple of one half of a wavelength of light emitted by said optoelectronic device for mirror periods as a function of distance from said active region.

6. The optoelectronic device of claim 1 wherein the optical thickness of said fist layer is less than the optical thickness of said second layer and the sum of the optical thicknesses of said pair of layers is one half of a wavelength of light emitted by said optoelectronic device.

7. The optoelectronic device of claim 1 further comprising a second DBR adjacent said active region.

8. The optoelectronic device of claim 7 wherein said second DBR comprises a plurality of semiconductor mirror layers.

9. The optoelectronic device of claim 7 wherein said second DBR comprises a plurality of dielectric mirror layers.

10. The optoelectronic device of claim 7 wherein said second DBR comprises a hybrid mirror comprising a dielectric portion and a semiconductor portion.

11. The optoelectronic device of claim 1 wherein said active region comprises at least one quantum well.

12. The optoelectronic device of claim 11 wherein said at least one quantum well comprises GaAs.

13. The optoelectronic device of claim 11 wherein said at least one quantum well comprises In₁₋

xGa_xAs<sub>1−

y</sub>N_y.

14. The optoelectronic device of claim 1 wherein the first material comprises Al_xGa₁₋

xAs and the second material comprises AlAs.

15. The optoelectronic device of claim 14 wherein x equals zero.

16. An optoelectronic device, comprising;

an active region formed adjacent a distributed bragg reflector (DBR),

said DBR comprising a plurality of mirror periods wherein each of said mirror periods comprise a first layer, formed from a first material GaAs having a first thermal conductivity and a second layer, formed from a second material AlAs having a second thermal conductivity that is greater than said first thermal conductivity,

wherein the optical thickness of at least a portion of said mirror periods is greater than one-half wavelength of light emitted by said optoelectronic device, and further

wherein the optical thickness of said first layers is greater than the optical thickness of said second layers for at least said portion of said mirror periods having an optical thickness greater than one-half the wavelength of light emitted by said optoelectronic device.

17. An optoelectronic device comprising:

an active region; and

a distributed bragg reflector (DBR) adjacent said active region, said DBR comprising a plurality of mirror periods wherein each of said mirror periods comprise a first layer formed from a first material having a first thermal conductivity and a second layer formed from a second material having a second thermal conductivity,

said second thermal conductivity being greater than said first thermal conductivity,

said plurality of mirror periods including a first mirror period adjacent said active region,

said second layer of said first mirror period being adjacent said active region,

said second layer of said first mirror period having an optical thickness greater than an optical thickness of said first layer of said first mirror period,

said each of said plurality of mirror periods having an optical thickness equal to a multiple of ½

wavelength of light emitted by said optoelectronic device.

18. The optoelectronic device of claim 17 wherein the thickness of said first layers is ¼

of a wavelength of light emitted by said optoelectronic device and wherein the optical thickness of said second layers is an odd integer multiple of ¼

of a wavelength of light emitted by said optoelectronic device.

19. The optoelectronic device of claim 17 wherein the thickness of the second layer of at least a portion of said plurality of mirror periods varies in a non-uniform fashion as a function of distance from said active region.

20. The optoelectronic device of claim 17 further comprising a second DBR adjacent an opposite side of said active region.

21. The optoelectronic device of claim 20 wherein said second DBR comprises a plurality of semiconductor mirror layers.

22. The optoelectronic device of claim 20 wherein said second DBR comprises a plurality of dielectric mirror layers.

23. The optoelectronic device of claim 20 wherein said second DBR comprises a hybrid mirror comprising a dielectric portion and a semiconductor portion.

24. The optoelectronic device of claim 17 wherein said active region comprises at least one quantum well.

25. The optoelectronic device of claim 24 wherein at least one quantum well comprises GaAs.

26. The optoelectronic device of claim 24 wherein at least one quantum well comprises In₁₋

xGa_xAs<sub>t−

y</sub>N_y.

27. The optoelectronic device of claim 17 wherein said first material comprises Al_xGa₁₋

xAs and said second material comprises AlAs.

28. The optoelectronic device of claim 27 wherein x equals zero.