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Semiconductor device, memory system and electronic apparatus

  • US 6,720,628 B2
  • Filed: 02/06/2002
  • Issued: 04/13/2004
  • Est. Priority Date: 03/26/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a first gate—

    gate electrode layer inducting a gate electrode of a first load transistor and a gate electrode of a first driver transistor;

    a second gate—

    gate electrode layer including a gate electrode of a second load transistor and a gate electrode of a second driver transistor;

    a first drain—

    drain wiring layer which forms a part of a connection layer that electrically connects a drain region of the first load transistor and a drain region of the first driver transistor;

    a second drain—

    drain wiring layer which forms a part of a connection layer that electrically connects a drain region of the second load transistor and a drain region of the second driver transistor;

    a first drain-gate wiring layer which forms a part of a connection layer that electrically connects the first gate—

    gate electrode layer and the second drain—

    drain wiring layer; and

    a second drain-gate wiring layer which forms a part of a connection layer that electrically connects the second gate—

    gate electrode layer and the first drain—

    drain wiring layer, wherein the first drain-gate wiring layer and the second drain-gate wiring layer are located in different layers, respectively, and wherein a width of the first gate—

    gate electrode layer in the first load transistor is larger than the width of the first gate—

    gate electrode layer in the first driver transistor.

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