Semiconductor constructions, and methods of forming semiconductor constructions

• US 6,720,638 B2
• Filed: 01/30/2003
• Issued: 04/13/2004
• Est. Priority Date: 06/21/2002
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Tran, Luan C.
• Primary Examiner(s): Nguyen, Tuan H.
• Application Number:
  US10/355,678
• Publication Number:
  US 20030235975A1
• Time in Patent Office: 439 Days
• Field of Search: 257/499, 257/501, 257/506, 257/508, 257/509, 257/510, 257/520
• US Class Current: 257/499
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/763 Polycrystalline semiconductor regions H01L21/76264 takes precedence

Abstract

The invention includes a semiconductor construction. The construction includes a semiconductive material having a surface and an opening extending through the surface. An electrically insulative liner is along a periphery of the opening. A mass comprising one or more of silicon, germanium, metal, metal silicide and dopant is within a bottom portion of the opening, and only partially fills the opening. The mass has a top surface. An electrically insulative material is within the opening and over the top surface of the mass. The top surface of the mass is at least about 200 Angstroms beneath the surface of the semiconductive material. The invention also includes methods of forming semiconductor constructions.

Claims

1. A semiconductor construction, comprising:

a semiconductive mass;

a pair of devices supported by the mass and separated from one another by an isolation region, the isolation region comprising;

an opening extending into the semiconductive mass, the opening having a periphery;

an electrically insulative liner along the periphery of the opening;

a material within a bottom portion of the opening and over the liner, the material only partially filling the opening, the material having a top surface;

an electrically insulative layer formed along an inside peripheral surface and in the form of a receptacle within the opening and over the top surface of the material; and

the top surface of the material being at least about 200 Å

beneath the surface of the semiconductive mass.

2. The construction of claim 1 one of the devices is associated with a p-well region of the semiconductive mass and the other of the devices is associated with an n-well region of the semiconductive mass;

and the opening extends into both of the p-well and n-well regions of the semiconductive mass.

3. The construction of claim 1 wherein the material comprises a metal silicide.

4. The construction of claim 1 wherein the material comprises consists essentially of a metal silicide.

5. The construction of claim 1 wherein the material comprises a metal.

6. The construction of claim 1 wherein the material consists essentially of a metal.

7. The construction of claim 1 wherein the material comprises tungsten.

8. The construction of claim 1 wherein the material consists essentially of tungsten.

9. The construction of claim 1 wherein the material comprises silicon.

10. The construction of claim 1 wherein the material consists essentially of doped silicon.

11. The construction of claim 1 wherein the material comprises silicon and germanium.

12. The construction of claim 1 wherein the material consists essentially of silicon and germanium.

13. The construction of claim 1 wherein the material consists essentially of silicon, germanium and a dopant within the silicon and germanium.

14. A semiconductor construction, comprising:

a first semiconductive material having a surface and an opening extending therein;

a second semiconductive material within a bottom portion of the opening and only partially filling the opening, the second semiconductive material having a top surface;

an electrically insulative material formed along an inside peripheral surface and in the form of a receptacle within the opening and over the top surface of the second semiconductive material; and

the top surface of the second semiconductive material being at least about 200 Å

beneath the surface of the first semiconductive material.

15. The construction of claim 14 wherein the insulative material comprises silicon dioxide.

16. The construction of claim 14 further comprising an electrically insulative liner extending between the second semiconductive material and the first semiconductive material.

17. The construction of claim 16 wherein the insulative liner narrows the opening extending into the first semiconductive material;

and wherein the insulative material and second semiconductive material together fill the narrowed opening.

18. The construction of claim 16 wherein the first and second semiconductive materials comprise silicon, and wherein the insulative liner comprises silicon nitride.

19. The construction of claim 16 wherein the insulative liner extends between the insulative material and the first semiconductive material;

wherein the insulative material comprises silicon dioxide, and wherein the insulative liner comprises silicon nitride.

20. The construction of claim 14 wherein the second semiconductive material top surface is at least about 300 Å

beneath the surface of the first semiconductive material.

21. The construction of claim 14 wherein the second semiconductive material top surface is at least about 400 Å

beneath the surface of the first semiconductive material.

22. The construction of claim 14 wherein the second semiconductive material top surface is at least about 500 Å

beneath the surface of the first semiconductive material.

23. The construction of claim 14 wherein the second semiconductive material top surface is at least about 700 Å

beneath the surface of the first semiconductive material.

24. The construction of claim 14 wherein the opening is at least about 0.3 micron deep within the first semiconductive material.

25. The construction of claim 14 wherein the opening is from about 0.2 micron deep within the first semiconductive material to about 1 micron deep within the first semiconductive material.

26. The construction of claim 14 wherein the first semiconductive material comprises monocrystalline silicon.

27. The construction of claim 14 wherein the first semiconductive material comprises n-type doped silicon, and wherein the second semiconductive material also comprises n-type doped silicon.

28. The construction of claim 14 wherein the first semiconductive material comprises p-type doped silicon, and wherein the second semiconductive material also comprises p-type doped silicon.

29. The construction of claim 14 wherein the first semiconductive material comprises n-type doped silicon, wherein the second semiconductive material comprises p-type doped silicon;

and wherein the second semiconductive material is electrically biased to a positive potential.

30. The construction of claim 14 wherein the first semiconductive material comprises p-type doped silicon, and wherein the second semiconductive material comprises n-type doped silicon;

and wherein the second semiconductive material is electrically biased to a negative potential.

31. A semiconductor construction, comprising:

a first semiconductive material having a surface and an opening extending therein, the first semiconductive material being background doped with a first type dopant;

at least one conductively-doped diffusion region extending into the first semiconductive material in a location proximate the opening, the at least one conductively-doped diffusion region extending to a depth within the first semiconductive material and comprising a second-type majority dopant, one of the first and second dopant types being n-type and the other being p-type;

a second semiconductive material within a bottom portion of the opening and only partially filling the opening, the second semiconductive material having a top surface elevationally below the depth of the conductively-doped diffusion region; and

an insulative material within the opening and over the top surface of the second semiconductive material.

32. The construction of claim 31 wherein the opening is between a pair of the conductively-doped diffusion regions, and wherein the opening and materials therein electrically isolate the conductively-doped diffusion regions of said pair from one another.

33. The construction of claim 31 wherein the insulative material comprises silicon dioxide.

34. The construction of claim 31 further comprising an electrically insulative liner extending between the second semiconductive material and the first semiconductive material.

35. The construction of claim 34 wherein the insulative liner narrows the opening extending into the first semiconductive material;

and wherein the insulative material and second semiconductive material together fill the narrowed opening.

36. The construction of claim 34 wherein the first and second semiconductive materials comprise silicon, and wherein the insulative liner comprises silicon nitride.

37. The construction of claim 34 wherein the insulative liner extends between the insulative material and the first semiconductive material;

wherein the insulative material comprises silicon dioxide, and wherein the insulative liner comprises silicon nitride.

38. The construction of claim 31 wherein the depth of the conductively-doped diffusion region is at least about 200 Å

beneath the surface of the first semiconductive material.

39. The construction of claim 31 wherein the depth of the conductively-doped diffusion region is at least about 300 Å

beneath the surface of the first semiconductive material.

40. The construction of claim 31 wherein the depth of the conductively-doped diffusion region is at least about 400 Å

beneath the surface of the first semiconductive material.

41. The construction of claim 31 wherein the depth of the conductively-doped diffusion region is at least about 500 Å

beneath the surface of the first semiconductive material.

42. The construction of claim 31 wherein the depth of the conductively-doped diffusion region is at least about 700 Å

beneath the surface of the first semiconductive material.

43. The construction of claim 31 wherein the first semiconductive material comprises monocrystalline silicon.

44. The construction of claim 31 wherein the first semiconductive material comprises silicon;

wherein the first type dopant is n-type dopant; and

wherein the second semiconductive material comprises n-type doped silicon.

45. The construction of claim 31 wherein the first semiconductive material comprises silicon;

wherein the first type dopant is p-type dopant; and

wherein the second semiconductive material comprises p-type doped silicon.

46. A semiconductor device, comprising:

a first semiconductive material having a surface and an opening extending therein;

a second semiconductive material provided in the opening and having a top surface;

an electrically insulative material within the opening and over the top surface of the second semiconductive material; and

wherein the top surface being elevationally below a depth of a conductively-doped diffusion region formed in the first semiconductive material.

47. A semiconductor construction, comprising:

a first semiconductive material having an opening extending therein;

a second semiconductive material provided in the opening;

an insulative liner formed only along an inside periphery of the opening and over a top surface of the second semiconductive material; and

wherein the top surface is elevationally below a depth of a conductively-doped diffusion region formed in the first semiconductive material.