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Semiconductor device having an adhesion layer

  • US 6,720,659 B1
  • Filed: 09/12/2000
  • Issued: 04/13/2004
  • Est. Priority Date: 05/07/1998
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    an insulating film of a fluorine-contained carbon film formed on said substrate, wherein the surface of said insulating film is irradiated with hydrogen plasma;

    a wiring layer of copper formed on said insulating film; and

    an adhesion layer formed between said Insulating film and said wiring layer, for preventing said wiring layer from being peeled off from said insulating film, wherein said adhesion layer includes a metal layer of a metal disposed adjacent said wiring layer, and a layer of a compound containing carbon and said metal disposed adjacent said insulating film.

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