Semiconductor device having an adhesion layer

• US 6,720,659 B1
• Filed: 09/12/2000
• Issued: 04/13/2004
• Est. Priority Date: 05/07/1998
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Akahori, Takashi
• Primary Examiner(s): WILLIAMS, ALEXANDER O
• Application Number:
  US09/660,884
• Time in Patent Office: 1,309 Days
• Field of Search: 257/762, 257/758, 257/700, 257/701, 257/774, 257/751, 257/759, 257/760, 257/763, 257/764, 257/767, 257/773, 156/652.1, 216/67, 216/75, 438/714, 438/717, 438/720, 438/734
• US Class Current: 257/762
• CPC Class Codes: H01L 21/0212 the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 21/3127 Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76828 thermal treatment
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 23/53228 the principal metal being copper
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Insulating films 21 through 24 of CF films (fluorine-contained carbon films) are formed on a substrate (not shown). In addition, Cu wiring layers 25 and 26 are formed on the CF films 21 and 23 via an adhesion layer 29 which comprises a Ti layer and a TiC layer. By forming the insulating films 21 through 24 of CF films, Cu in the wiring layers is prevented from diffusing into the insulating films 21 through 24. The relative dielectric constant of the CF film is smaller than the relative dielectric constant of a BCB film.

Claims

1. A semiconductor device comprising:

a substrate;

an insulating film of a fluorine-contained carbon film formed on said substrate, wherein the surface of said insulating film is irradiated with hydrogen plasma;

a wiring layer of copper formed on said insulating film; and

an adhesion layer formed between said Insulating film and said wiring layer, for preventing said wiring layer from being peeled off from said insulating film, wherein said adhesion layer includes

a metal layer of a metal disposed adjacent said wiring layer, and

a layer of a compound containing carbon and said metal disposed adjacent said insulating film.

2. A semiconductor device as set forth in claim 1, wherein said metal layer is formed of an element selected from the group consisting of titanium, molybdenum, chromium, cobalt, tantalum, niobium and zirconium.

3. A semiconductor device as set forth in claim 1 or claim 2, wherein said insulating film is amorphous.

4. A semiconductor device as set forth in claim 1 or claim 2, wherein said insulating film has a film density of 1.5 g/cm³ or higher.

5. A semiconductor device as set forth in claim 1 or claim 2, wherein said insulating film contains oxygen having a concentration of 3 atomic % or less.

6. A semiconductor device as set forth in claim 1 or claim 2, wherein said insulating film contains nitrogen having a concentration of 3 atomic % or less.

7. A semiconductor device as set forth in claim 1 or claim 2, wherein said insulating film contains boron having a concentration of from 10⁻

3 atomlc % to 1 atomic %.