Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus

• US 6,720,846 B2
• Filed: 03/20/2002
• Issued: 04/13/2004
• Est. Priority Date: 03/21/2001
• Status: Expired due to Fees

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Miyazawa, Hiromu, Higuchi, Takamitsu, Iwashita, Setsuya
• Primary Examiner(s): Summons, Barbara
• Application Number:
  US10/102,181
• Publication Number:
  US 20020145488A1
• Time in Patent Office: 755 Days
• Field of Search: 333/150-155, 333/193-196, 333/133, 331/107.A, 331/155, 310/313.R, 310/313.A, 310/313.B, 310/313.C, 310/313.D
• US Class Current: 333/193
• CPC Class Codes: H03H 9/02574 of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
• CPC Class Codes: H03H 9/02984 Protection measures against damaging
• CPC Class Codes: H03H 9/0542 consisting of a lateral arrangement H03H9/0566 takes precedence

Abstract

Surface acoustic wave device having a high k², and a frequency filter, oscillator, electronic circuit and electronic device employing this surface acoustic wave device is provided, wherein a first oxide thin film layer comprising SrO or MgO and a second oxide thin film layer comprising SrTiO₃ are sequentially formed on top of a (110) Si substrate, or a first oxide thin film layer comprising CeO₂, ZrO₂ or yttrium-stabilized zirconia and a second oxide thin film layer comprising SrTiO₃ are sequentially formed on top of a (100) Si substrate, a KNbO₃ piezoelectric thin film being then formed on top of either of these second oxide thin film layers, and then, a protective film comprising oxide or nitride is formed on top of the KNbO₃ piezoelectric thin film, finally, at least one electrode is formed on top of this protective film, to form a surface acoustic wave device, which surface acoustic wave device is employed to form a frequency filter, oscillator, electronic circuit, or electronic device.

Claims

1. A surface wave device comprising:

one of a (110) silicon substrate and a (100) silicon substrate;

a first oxide thin film layer on said substrate formed from one of strontium oxide and magnesium oxide;

a second oxide thin film layer on said first oxide thin film layer;

a potassium niobate piezoelectric thin film on said second oxide thin film layer; and

a protective thin film on said potassium niobate piezoelectric thin film, said protective thin film consisting of one of oxide and nitride.

2. The device of claim 1, wherein said potassium niobate piezoelectric thin film has a (010) orientation.

3. The device of claim 1, wherein said substrate comprises said (100) silicon substrate and said first oxide thin film layer further comprises one of cerium oxide, zirconium oxide, and yttria-stabilized zirconia.

4. The device of claim 1, wherein said second oxide thin film layer further comprises strontium titanate.

5. A surface acoustic wave device having a (100) silicon substrate and a potassium niobate piezoelectric thin film, characterized in the provision of said silicon substrate, a first oxide thin film layer formed on top of said silicon substrate, a second oxide thin film layer formed on top of said first oxide thin film layer, said potassium niobate piezoelectric thin film formed on top of said second oxide thin film layer, and a protective thin film comprising oxide or nitride formed on top of said potassium niobate piezoelectric thin film.

6. A surface acoustic wave device according to claim 5, characterized in that said potassium niobate piezoelectric thin film has a (010) orientation.

7. A surface acoustic wave device according to claim 5, characterized in that said first oxide thin film layer is cerium oxide, zirconium oxide, or yttria-stabilized zirconia.

8. A surface acoustic wave device according to claim 5, characterized in that said second oxide thin film layer is formed from strontium titanate.

9. A surface acoustic wave device having a (110) silicon substrate and a potassium niobate piezoelectric thin film, characterized in the provision of said silicon substrate, a first oxide thin film layer formed from one of strontium oxide and magnesium oxide formed on top of said silicon substrate, a second oxide thin film layer formed on top of said first oxide thin film layer, said potassium niobate piezoelectric thin film formed on top of said second oxide thin film layer, and a protective thin film comprising oxide or nitride formed on top of said potassium niobate piezoelectric thin film.

10. An oscillator characterized in the provision to a surface acoustic wave device according to claim 9, of an electric signal impressing electrode, which is formed on top of said protective thin film or said piezoelectric thin film and which generates a surface acoustic wave on said piezoelectric thin film from the impressed electric signal;

and a resonating electrode, which is formed on top of said protective thin film or said piezoelectric thin film and which resonates a specific frequency or specific band frequency of the surface acoustic waves that are generated by said electric signal impressing electrode.

11. An electronic circuit characterized in the provision of the oscillator according to claim 10, and an electric signal supplying element for impressing said electric signal on said electric signal impressing electrode provided in said oscillator;

wherein said electronic circuit selects specific frequencies from the frequencies of said electric signal or converts said electric signal to specific frequencies, or applies specific modulation to the electric signal and carries out specific demodulation or specific wave detection.

12. An electronic device characterized in the provision of the electronic circuit according to claim 11.

13. An electronic device characterized in the provision of the oscillator according to claim 10.

14. A surface acoustic wave device according to claim 9, characterized in that said potassium niobate piezoelectric thin film has a (010) orientation.

15. A surface acoustic wave device according to claim 9, characterized in that said second oxide thin film layer is formed from strontium titanate.

16. A frequency filter characterized in the provision to a surface acoustic wave device according to claim 9, of a first electrode, which is formed on top of said protective thin film or said piezoelectric thin film;

and a second electrode which is formed on top of said protective thin film or said piezoelectric thin film;

said second electrode resonating at a specific frequency or at a specific band frequency of the surface acoustic waves that are produced in said piezoelectric thin film from an electric signal impressed by said first electrode, and converting this resonance to an electric signal.

17. An electronic device characterized in the provision of the frequency filter according to claim 16.