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Method of preventing leakage current of a metal-oxide semiconductor transistor

  • US 6,723,609 B2
  • Filed: 11/13/2002
  • Issued: 04/20/2004
  • Est. Priority Date: 02/04/2002
  • Status: Active Grant
First Claim
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1. A method of fabricating a metal-oxide semiconductor transistor (MOS transistor) on a substrate comprising:

  • sequentially forming a gate oxide layer and a gate on the substrate;

    performing a first ion implantation process to form a first doped region in the substrate;

    sequentially forming a liner layer, a dielectric layer and a sacrificial layer on the substrate;

    performing a first etching process to simultaneously form an arc-shaped spacer on either side of the gate and remove portions of the dielectric layer and the sacrificial layer atop the gate by utilizing the liner layer as a first stop layer;

    performing a second etching process to remove portions of the sacrificial layer within the arc-shaped spacer by utilizes the dielectric layer as a second stop layer, and constructing a L-shaped spacer on either side of the gate;

    performing a third etching process to remove portions of the liner layer not covered by the L-shaped spacer;

    performing a second ion implantation process to form a second doped region with a gradient profile in portions of the substrate adjacent to either side of the L-shaped spacer; and

    performing a self-aligned silicide (salicide) process to form a silicide layer on the gate and on exposed portions of the substrate surface above the second doped region.

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