Memory device and method for selectable sub-array activation
First Claim
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1. A memory device comprising:
- a memory array comprising a plurality of groups of sub-arrays;
a register; and
circuitry operative to simultaneously write data into N number of groups of sub-arrays, wherein N is a value stored in the register.
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Abstract
A memory device and method for selectable sub-array activation. In one preferred embodiment, a memory array is provided comprising a plurality of groups of sub-arrays and circuitry operative to simultaneously write data into and/or read data from a selected number of groups of sub-arrays. By selecting the number of groups of sub-arrays into which data is written and/or from which data is read, the write and/or read data rate is varied. Such varying can be used to prevent thermal run-away of the memory array. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.
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11 Claims
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1. A memory device comprising:
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a memory array comprising a plurality of groups of sub-arrays;
a register; and
circuitry operative to simultaneously write data into N number of groups of sub-arrays, wherein N is a value stored in the register. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
a plurality of data registers coupled with the plurality of groups of sub-arrays;
register selection logic coupled with the plurality of data registers and the register; and
sub-array group selection logic coupled with the plurality of groups of sub-arrays and the register.
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6. The invention of claim 1 further comprising:
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a data register comprising a plurality of register ports coupled with the plurality of groups of sub-arrays;
port control logic coupled with the plurality of registers ports and the register; and
sub-array group selection logic coupled with the plurality of groups of sub-arrays and the register.
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7. The invention of claim 1 further comprising:
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a data register;
a variable serial-to-parallel connection circuit, the variable serial-to-parallel connection circuit coupled with the register and coupling the data register to the plurality of groups of sub-arrays; and
sub-array group selection logic coupled with the plurality of groups of sub-arrays and the register.
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8. The invention of claim 1, wherein the memory array comprises a three-dimensional memory array.
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9. The invention of claim 1, wherein the memory array comprises a plurality of antifuse memory cells.
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10. The invention of claim 1, wherein the memory array comprises a plurality of write-once memory cells.
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11. The invention of claim 1, wherein the memory array comprises a plurality of write-many memory cells.
Specification