Method for assessing the reliability of interconnects

• US 6,725,433 B1
• Filed: 09/24/2002
• Issued: 04/20/2004
• Est. Priority Date: 09/24/2002
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Hau-Riege, Christine, Marathe, Amit
• Primary Examiner(s): Siek, Vuthe
• Assistant Examiner(s): Dinh, Paul
• Application Number:
  US10/252,680
• Time in Patent Office: 574 Days
• Field of Search: 716/4-5
• US Class Current: 324/762.01
• CPC Class Codes: G01R 31/2858 Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection

Abstract

A methodology for testing interconnect structures includes testing a number of short line interconnects having the same length and different reservoir sizes. By measuring and comparing the stress values on the interconnects, a relationship between reservoir area and jL_crit may be obtained. This information may then be used to more accurately assess the reliability of an interconnect and to design more reliable interconnects.

Claims

1. A method for testing interconnect structures, comprising:

forming a plurality of interconnects, each of the interconnects having two ends with a contact and a reservoir located at each of the ends, wherein each of the interconnects has the same length and a different reservoir size;

supplying a voltage to each of the plurality of interconnects;

measuring stress values for each of the respective interconnects; and

determining a relationship between reservoir size and jL_crit where jL_crit represents a current density (j) and interconnect length (L) product below which an interconnect is considered to be immortal.

2. The method of claim 1, wherein the determining a relationship comprises:

determining that a first one of the interconnects having a first reservoir has a lower jL_crit value than a second one of the interconnects having a second reservoir, where the first reservoir is larger in area than the second reservoir.

3. The method of claim 1, wherein the measuring stress values comprises:

measuring tensile stress values at a plurality of locations on each of the interconnects, and

identifying a maximum tensile stress value for each of the respective interconnects.

4. The method of claim 3, further comprising:

determining that a first one of the interconnects having a first reservoir has a higher estimated median time to failure than a second one of the interconnects having a second reservoir, wherein the first reservoir has a smaller area than the second reservoir.

5. The method of claim 1, further comprising:

using the determined relationship to design integrated circuits having increased reliability.

6. The method of claim 1, wherein each of the plurality of interconnects comprises aluminum.

7. The method of claim 1, wherein each of the plurality of interconnects comprises copper.

8. The method of claim 1, further comprising:

determining that a first one of the interconnects having a first reservoir has a smaller maximum stress value than a second one of the interconnects having a second reservoir, where the first reservoir is smaller in area than the second reservoir.

9. A method for testing a plurality of interconnects, each of the interconnects including a via located at each end of the interconnect and each of the interconnects having a same length (L) and a different reservoir size, and wherein each of the interconnects has a theoretical current density and length product (jL_crit) value, below which the interconnect is considered immortal, the method comprising:

supplying a voltage to a first one of the vias for each of the respective interconnects, the voltage resulting in a first current density j on each of the interconnects, such that jL for a first one of the interconnects is below its jL_crit value;

measuring stress values for each of the respective interconnects; and

determining that at least one of the plurality of interconnects is not immortal at the first current density.

10. The method of claim 9, further comprising:

determining a relationship between electromigration in the plurality of interconnects and reservoir size based on the measured stress values.

11. The method of claim 9, further comprising:

determining that the jL_crit values for the plurality of interconnects varies with reservoir size.

12. The method of claim 9, wherein each of the plurality of interconnects comprises aluminum.

13. The method of claim 9, wherein each of the plurality of interconnects comprises copper.

14. The method of claim 9, further comprising:

generating an estimated median time to failure for at least one of the interconnects based on the measured stress values.

15. The method of claim 14, further comprising:

identifying a reservoir size for an interconnect above which the corresponding interconnect is not immortal.

16. A method of analyzing a plurality of interconnects, each interconnect having a length (L) and a reservoir located at each end of the interconnect, wherein each of the interconnects has a different reservoir size, the method comprising:

applying a voltage to each of the interconnects such that a current density (j) on each of the interconnects is achieved, wherein jL for a first one of the interconnects is less than a theoretical jL_crit value and the first interconnect is considered immortal;

measuring stress values for each of the plurality of interconnects; and

estimating a median time to failure for each of the plurality of interconnects based on the measured stress values.

17. The method of claim 16, wherein each of the interconnects is relatively short and experiences a back stress effect and the first interconnect is a straight line interconnect with a relatively small reservoir size.

18. The method of claim 16, wherein each interconnect comprises at least one of aluminum and copper and includes a via at each respective end.

19. The method of claim 16, further comprising:

identifying a relationship between reservoir size and median time to failure for the plurality of interconnects.

20. The method of claim 19, wherein the relationship indicates that an interconnect with a larger reservoir size has a lower median time to failure than an interconnect with a smaller reservoir size.