Micromechanical differential pressure sensor device

• US 6,725,725 B1
• Filed: 05/15/2000
• Issued: 04/27/2004
• Est. Priority Date: 11/13/1997
• Status: Expired due to Fees

• Current Assignee: Siemens AG
• Original Assignee: Infineon Technologies AG
• Inventors: Werner, Wolfgang, Timme, Hans-Jörg
• Primary Examiner(s): Lefkowitz, Edward
• Assistant Examiner(s): FERGUSON SAMRETH, MARISSA LIANA
• Application Number:
  US09/571,489
• Time in Patent Office: 1,443 Days
• Field of Search: 737/18, 737/16, 737/20, 737/21, 737/19, 737/24, 737/15, 737/36, 737/53, 737/54, 361/283, 361/283--28
• US Class Current: 73/716
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A micromechanical differential pressure sensor device for measuring a pressure difference between two mutually separated spaces or media, in which two absolute pressure measuring devices are monolithically integrated on a single support substrate, in particular on a semiconductor chip. The absolute pressure measuring devices are preferably fabricated by surface micromachining.

Claims

1. A micromechanical differential pressure sensor device for measuring a pressure difference between two mutually separated spaces, comprising:

a single support substrate;

two capacitive absolute pressure measuring devices monolithically integrated on said single support substrate; and

pressure connection parts respectively extending from said two capacitive absolute pressure measuring devices and coupling each of the two mutually separated spaces and respective pressures to be measured to a respective one of said two capacitive absolute pressure measuring devices.

2. The micromechanical differential pressure sensor device according to claim 1, wherein said pressure connection parts are two chimneys each projecting above one of said two capacitive absolute pressure measuring devices.

3. The micromechanical differential pressure sensor device according to claim 1,

wherein said single support substrate is a semiconductor chip having a surface and mutually separated doped regions, including a first doped region and a second doped region;

including an insulating sacrificial layer having a first cutout and a second cutout formed therein and disposed on said surface of said semiconductor chip, said first cutout being disposed over said first doped region and said second cutout being disposed over said second doped region and said second cutout being disposed over said second doped region; and

diaphragms including a first electrically conductive diaphragm covering said first cutout in a gastight manner and a second electrically conductive diaphragm covering said second cutout in a gastight manner, two mutually separated chambers thereby being formed and each defined by said semiconductor chip, one of said diaphragms, and said insulating sacrificial with said first cutout and said second cutout, each of said diaphragms forms, together with an associated one of said doped regions one of said two capacitive absolute pressure measuring devices in which said diaphragms and said doped regions constitute capacitor plates.

4. The micromechanical differential pressure sensor device according to claim 3, wherein said two mutually separated chambers are filled with a substance selected from the group consisting of air, a different gas, and a gas mixture.

5. The micromechanical differential pressure sensor device according to claim 3,

wherein said two capacitive absolute pressure measuring devices output two output signals;

and

including an evaluation circuit configuration integrated on said semiconductor chip, said evaluation circuit configuration coupled to said two capactive absolute pressure measuring devices and receives and processes the two output signals of said two capacitive absolute pressure measuring devices.

6. The micromechanical differential pressure sensor device according to claim 5, wherein said evaluation circuit configuration has an input bridge, which forms a difference between the two output signals of said two capacitive absolute pressure sensor devices resulting in a differential signal, and said evaluation circuit configuration processes further only the differential signal.

7. The micromechanical differential pressure sensor device according to claim 3, wherein said two mutually separated chambers are vacuumed chambers.

8. The micromechanical differential pressure sensor device according to claim 1, wherein said pressure connection parts are two connectors each projecting above one of said two capacitive absolute pressure measuring devices.

9. The micromechanical differential pressure sensor according to claim 8, wherein said connectors are hose shaped connectors.