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Method of making conformal lining layers for damascene metallization

  • US 6,727,169 B1
  • Filed: 08/23/2000
  • Issued: 04/27/2004
  • Est. Priority Date: 10/15/1999
  • Status: Expired due to Term
First Claim
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1. A damascene metallization process, comprising:

  • forming a trench in a desired wiring pattern in an insulating layer above a semiconductor substrate;

    forming a contact via extending downwardly from a floor of the trench to expose at least part of an underlying conductive element;

    lining surfaces of the trench and contact via with no more than about one monolayer by exposure to a first reactant species;

    removing the first reactant species from a reaction chamber containing the substrate;

    reacting the monolayer with a non-radical reducing species;

    reacting a second reactant species with the monolayer after removing the first reactant and reacting the monolayer; and

    removing the second reactant species from the reaction chamber after reacting the second reactant species and before introducing any other reactants into the reaction chamber.

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