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Process for the production of semiconductor device

  • US 6,727,182 B2
  • Filed: 10/15/1998
  • Issued: 04/27/2004
  • Est. Priority Date: 11/14/1996
  • Status: Expired due to Fees
First Claim
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1. A method for producing a semiconductor device, which comprises the steps of:

  • depositing an insulator film of a fluorine containing carbon film as an interlayer insulator film on an object to be treated;

    forming a pattern of a resist film on said insulator film so that a thickness of said resist film is not larger than a thickness of said insulator film;

    producing an oxygen plasma of a treatment gas containing an oxygen plasma producing gas; and

    removing said resist film while etching said insulator film by said oxygen plasma, wherein an etch rate of said fluorine containing carbon film when etched by the said oxygen oxide plasma is equal to an etch rate of said resist film when etched by the said oxygen plasma.

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