Process for the production of semiconductor device

• US 6,727,182 B2
• Filed: 10/15/1998
• Issued: 04/27/2004
• Est. Priority Date: 11/14/1996
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Hirata, Tadashi, Aoki, Takeshi, Ishizuka, Shuichi, Endo, Shunichi, Akahori, Takashi
• Primary Examiner(s): HITESHEW, FELISA CARLA
• Application Number:
  US09/101,308
• Publication Number:
  US 20010001741A1
• Time in Patent Office: 2,021 Days
• Field of Search: 438/710, 438/709, 438/706
• US Class Current: 438/710
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl₃ gas. Thereafter, when the surface of the wafer is irradiated with O₂ plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO₂ or the like may be substituted for the film.

Claims

1. A method for producing a semiconductor device, which comprises the steps of:

depositing an insulator film of a fluorine containing carbon film as an interlayer insulator film on an object to be treated;

forming a pattern of a resist film on said insulator film so that a thickness of said resist film is not larger than a thickness of said insulator film;

producing an oxygen plasma of a treatment gas containing an oxygen plasma producing gas; and

removing said resist film while etching said insulator film by said oxygen plasma,

wherein an etch rate of said fluorine containing carbon film when etched by the said oxygen oxide plasma is equal to an etch rate of said resist film when etched by the said oxygen plasma.

2. The method for producing a semiconductor device, as set forth in claim 1, wherein said treatment gas further includes a silane compound gas.

3. A method for producing a semiconductor device, which comprises the steps of:

depositing an insulator film of a fluorine containing carbon film as an interlayer insulator on an object to be treated, a metal wiring being buried in the insulator film;

forming a pattern of a resist film on said insulator film so that a thickness of said resist film is not larger than a thickness of said insulator film;

producing an oxygen plasma of a treatment gas containing an oxygen plasma producing gas; and

removing said resist film positioned above the metal wiring to reveal a surface of the metal wiring while etching said insulator film by an oxygen plasma,

wherein an etch rate of said fluorine containing carbon film when etched by the oxide plasma is equal to an etch rate of said resist film when etched by the oxide plasma.