Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer

• US 6,727,549 B1
• Filed: 02/29/2000
• Issued: 04/27/2004
• Est. Priority Date: 06/30/1998
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Doyle, Brian S.
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): YEVSIKOV, VICTOR V
• Application Number:
  US09/515,960
• Time in Patent Office: 1,519 Days
• Field of Search: 257/347, 257/340, 257/333, 257/389, 257/349, 257/305, 257/632, 257/748, 257/750, 257/754, 257/755, 257/757, 257/49, 257/66, 257/763, 257/499, 257/301, 438/456, 438/457, 438/458, 438/459, 438/915
• US Class Current: 257/347
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: Y10S 438/915 Amphoteric doping

Abstract

A method of fabricating a film of active devices is provided. First damaged regions are formed, in a substrate, underneath first areas of the substrate where active devices are to be formed. Active devices are formed onto the first areas. Second damaged regions are formed, in the substrate, between the first damaged regions. The film is caused to detach from a rest of the substrate at a location where the first and second damaged regions are formed.

Claims

1. A semiconductor substrate comprising:

a plurality of active devices formed onto said substrate; and

a plurality of damaged regions formed in said, substrate, each damaged region corresponding to one of said plurality of active devices and located in said substrate underneath a corresponding active device.

2. The semiconductor substrate of claim 1 wherein said damaged regions are formed by way of ion implantation.

3. The semiconductor substrate of claim 1 wherein each damaged region includes a plurality of bubbles.

4. A semiconductor substrate comprising:

a plurality of active devices farmed onto said substrate;

a plurality of first damaged regions formed in said substrate, each first damaged region corresponding to one of said plurality of active devices and located in said substrate underneath a corresponding active device; and

a plurality of second damaged regions formed, in said substrate, between said first damaged regions.

5. The semiconductor substrate of claim 4 wherein said first damaged regions are formed by way of ion implantation.

6. The semiconductor substrate of claim 4 wherein said second damaged regions are formed by way of ion implantation.

7. The semiconductor substrate of claim 4 wherein each first damaged region includes a plurality of bubbles.

8. The semiconductor substrate of claim 7 wherein each second damaged region includes a void.