Semiconductor device with improved bonding

• US 6,727,593 B2
• Filed: 02/28/2002
• Issued: 04/27/2004
• Est. Priority Date: 03/01/2001
• Status: Expired due to Term

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Toyoda, Hiroshi, Hasunuma, Masahiko, Nakao, Mitsuhiro, Sakata, Atsuko, Kaneko, Hisashi, Komukai, Toshiaki
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US10/084,065
• Publication Number:
  US 20020121703A1
• Time in Patent Office: 789 Days
• Field of Search: 257/751-753, 257/758, 257/760-766, 257/768-771, 257/773-776, 257/618, 257/622-624, 257/638, 257/648, 257/649, 257/650, 257/656, 257/683, 257/685, 257/687, 257/688, 438/618, 438/622-624, 438/638, 438/648, 438/649, 438/650, 438/656, 438/683, 438/685, 438/687, 438/688
• US Class Current: 257/762
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 21/76858 by diffusing alloying elements
• CPC Class Codes: H01L 21/76886 Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
• CPC Class Codes: H01L 21/76888 By rendering at least a portion of the conductor non conductive, e.g. oxidation
• CPC Class Codes: H01L 22/32 Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors arrangements for conducting electric current to or from the solid state body in operation H01L23/48
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/0392 specifically adapted to include a probing step
• CPC Class Codes: H01L 2224/03921 by repairing the bonding area damaged by the probing step
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05017 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/05082 Two-layer arrangements
• CPC Class Codes: H01L 2224/05083 Three-layer arrangements
• CPC Class Codes: H01L 2224/05093 of a plurality of vias
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05187 : Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/05188
• CPC Class Codes: H01L 2224/05546 : Dual damascene structure
• CPC Class Codes: H01L 2224/05552 : in top view
• CPC Class Codes: H01L 2224/05557 : comprising protrusions or indentations
• CPC Class Codes: H01L 2224/05558 : conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/05559 : non conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/05567 : the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05605 : Gallium [Ga] as principal constituent
• CPC Class Codes: H01L 2224/05609 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/05611 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/05613 : Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/05616 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/0562 : Antimony [Sb] as principal constituent
• CPC Class Codes: H01L 2224/05624 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/13105 : Gallium [Ga] as principal constituent
• CPC Class Codes: H01L 2224/13109 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13113 : Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/1312 : Antimony [Sb] as principal constituent
• CPC Class Codes: H01L 2224/13124 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/45015 : being circular
• CPC Class Codes: H01L 2224/45105 : Gallium (Ga) as principal constituent
• CPC Class Codes: H01L 2224/45109 : Indium (In) as principal constituent
• CPC Class Codes: H01L 2224/45111 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/45113 : Bismuth (Bi) as principal constituent
• CPC Class Codes: H01L 2224/45116 : Lead (Pb) as principal constituent
• CPC Class Codes: H01L 2224/4512 : Antimony (Sb) as principal constituent
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45139 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/4807 : of bonding interfaces, e.g. interlocking features
• CPC Class Codes: H01L 2224/48453 : of the interface with the bonding area
• CPC Class Codes: H01L 2224/48463 : the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48505 : at the bonding interface
• CPC Class Codes: H01L 2224/48605 : Gallium (Ga) as principal constituent
• CPC Class Codes: H01L 2224/48611 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/48613 : Bismuth (Bi) as principal constituent
• CPC Class Codes: H01L 2224/48616 : Lead (Pb) as principal constituent
• CPC Class Codes: H01L 2224/4862 : Antimony (Sb) as principal constituent
• CPC Class Codes: H01L 2224/48624 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48639 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48705 : Gallium (Ga) as principal constituent
• CPC Class Codes: H01L 2224/48711 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/48713 : Bismuth (Bi) as principal constituent
• CPC Class Codes: H01L 2224/48716 : Lead (Pb) as principal constituent
• CPC Class Codes: H01L 2224/4872 : Antimony (Sb) as principal constituent
• CPC Class Codes: H01L 2224/48724 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48739 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48744 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48747 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48799 : Principal constituent of the connecting portion of the wire connector being Copper (Cu)
• CPC Class Codes: H01L 2224/48805 : Gallium (Ga) as principal constituent
• CPC Class Codes: H01L 2224/48811 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/48813 : Bismuth (Bi) as principal constituent
• CPC Class Codes: H01L 2224/48816 : Lead (Pb) as principal constituent
• CPC Class Codes: H01L 2224/4882 : Antimony (Sb) as principal constituent
• CPC Class Codes: H01L 2224/48824 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48839 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48844 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/85375 : having an external coating, e.g. protective bond-through coating
• CPC Class Codes: H01L 23/53233 : Copper alloys
• CPC Class Codes: H01L 23/53238 : Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53295 : Stacked insulating layers
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

Claims

1. A semiconductor device, comprising:

a copper wiring layer formed above a semiconductor substrate;

a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy containing copper and a metal having a higher oxidation tendency than copper formed to reach bottom surface of the pad electrode layer; and

an insulating protective film having an opening extended to the pad electrode layer wherein

the pad electrode layer has an oxide layer, which is mainly comprising the metal having the higher oxidation tendency than copper, as an upper surface layer; and

a conductive substance is electrically connected to the pad electrode layer penetrating a part of the oxidation layer.

2. The semiconductor device according to claim 1, wherein the metal having the higher oxidation tendency than copper includes at least one selected from aluminum (Al), titanium (Ti), tantalum (Ta), zirconium (Zr), vanadium (V), tin (Sn), tungsten (W), cobalt (Co), iron (Fe), nickel (Ni), ruthenium (Ru), chromium (Cr), molybdenum (Mo), niobium (Nb), hafnium (Hf), magnesium (Mg) and beryllium (Be).

3. The semiconductor device according to claim 1, wherein a concentration of the metal having the higher oxidation tendency than copper is higher in a region near top surface of the pad electrode layer and becomes low under the region near the top surface.

4. The semiconductor device according to claim 3, wherein the concentration of the metal having the higher oxidation tendency than copper is 2 atm % or more in the region near the top surface.

5. The semiconductor device according to claim 1, wherein the pad electrode layer has a first oxide layer as an upper surface layer and is formed into a laminated form, below the first oxide layer, which includes a first alloy layer containing copper and the metal having the higher oxidation tendency than copper, a second oxide layer, and a second alloy layer in which a concentration of the metal having the higher oxidation tendency than copper is lower than the first alloy layer in this order.

6. The semiconductor device according to claim 1, wherein the pad electrode layer has a structure into which an insulating substance is intruded.

7. The semiconductor device according to claim 1, wherein the conductive substance is a conductive wire or a conductive bump, and bonded to the pad electrode layer.

8. The semiconductor device according to claim 1, wherein a concentration of copper in the pad electrode layer is 10 atm % or less on average from its surface to a depth of 2 nm.

9. The semiconductor device according to claim 1, wherein the copper wiring layer does not have the alloy containing copper and the metal having the higher oxidation tendency than copper.