Method and apparatus for non-conductively interconnecting integrated circuits

• US 6,728,113 B1
• Filed: 06/24/1993
• Issued: 04/27/2004
• Est. Priority Date: 06/24/1993
• Status: Active Grant

• Current Assignee: Sun Microsystems Incorporated (Oracle Corporation)
• Original Assignee: Polychip, Inc.
• Inventors: Salzman, David B., Knight, Thomas F.
• Primary Examiner(s): Vigushin, John B.
• Application Number:
  US08/082,328
• Time in Patent Office: 3,960 Days
• Field of Search: 361/760-763, 361/765, 361/807, 361/303-305, 361/321.2, 361/766, 361/782, 361/811, 361/306.1, 361/764, 361/767, 361/768, 361/770, 361/771, 361/783, 361/784, 361/803, 174/250, 174/253, 174/255, 174/259, 174/261, 174/260, 257/296, 257/307, 257/678, 257/904, 257/924, 333/181, 333/184, 333/185, 333/202, 333/204, 333/236, 333/238, 333/245-247, 439/68, 439/69, 439/83, 439/620
• US Class Current: 361/760
• CPC Class Codes: G01R 31/3025 Wireless interface with the DUT
• CPC Class Codes: G01R 31/312 by capacitive methods
• CPC Class Codes: G01R 31/318513 Test of Multi-Chip-Moduls
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/642 Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01032 Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/01043 : Technetium [Tc]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/01092 : Uranium [U]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: Y10S 257/924 : with passive device, e.g. capacitor, or battery, as integral part of housing or housing element, e.g. cap

Abstract

Apparatus is described for capacitively signalling between different semiconductor chips and modules without the use of connectors, solder bumps, wire-bond interconnections or the like. Preferably, pairs of half-capacitor plates, one half located on each chip, module or substrate are used to capacitively couple signals from one chip, module or substrate to another. The use of plates relaxes the need for high precision alignment as well as reduces the area needed to effect signalling, and reduces or eliminates the requirements for exotic metallurgy.

Claims

1. A modular electronic system comprising:

a substrate;

a ground plane in said substrate;

a semiconductor chip;

means for powering said chip;

means for capacitively signalling between said chip and said substrate; and

signal leads connected on said substrate and said chip to said means for capacitively signalling.

2. A modular electronic system as defined in claim 1 wherein said means for capacitively signalling comprises first and second coupled half-capacitors, said first half-capacitor being associated with said chip and said second half-capacitor being associated with said substrates said first and second coupled half-capacitors comprising effectively overlapping conductive regions separated by a gap.

3. A modular electronic system as defined in claim 2 wherein at least one of said conductive regions comprises a plate.

4. A modular electronic system as defined in claim 2 wherein the capacitance of said means for capacitively signaling can be varied by changing the effective area of overlap between said conductive regions.

5. A modular electronic system as defined in claim 4 further comprising a plurality of coupled half-capacitors, a substantial area of said chip and a substantial portion of the area of said substrate overlapping said chip being covered with substantially overlapping half-capacitors.

6. A modular electronic system as defined in claim 5 wherein at least one half-capacitor on said chip is connected to a chip ground, power, or other common reference signal.

7. A modular electronic system as defined in claim 5 wherein at least one half-capacitor on said substrate is connected to a substrate ground, power, or other common reference signal.

8. A modular electronic system as defined in claim 4 wherein the area of one of said conductive regions is greater than the area of the other of said conductive regions.

9. A modular electronic system as defined in claim 4 wherein the shape of one of said conductive regions differs from the shape of the other of said conductive regions.

10. A modular electronic system as defined in claim 4 wherein said first half-capacitor overlays circuitry.

11. A modular electronic system as defined in claim 2 wherein portions of said chip are passivated, but not said first half-capacitor.

12. A modular electronic system as defined in claim 2 wherein said gap is at least partially filled with a dielectric.

13. A modular electronic system as defined in claim 12 wherein said dielectric comprises a uniform material.

14. A modular electronic system as defined in claim 12 wherein said dielectric accommodates mechanical guides.

15. A modular electronic system as defined in claim 12 further including passivation distinct from said dielectric.

16. A modular electronic system as defined in claim 15 wherein said dielectric has a substantially greater dielectric constant than does said passivation.

17. A modular electronic system as defined in claim 12 wherein said dielectric is bonded to said substrate.

18. A modular electronic system as defined in claim 12 wherein said dielectric provides a means for affixing said chip to said substrate.

19. A modular electronic system as defined in claim 1 further comprising a transmission line coupled to a first means for capacitively signalling.

20. A modular electronic system as defined in claim 19 wherein said transmission line is further coupled to a second means for capacitively signalling.

21. A modular electronic system as defined in claim 19 wherein said transmission line is further coupled to a conductive junction.

22. A modular electronic system as defined in claim 19 wherein

a first multiplicity of said means for capacitively signaling between said chip and said substrate occupies a first area at a first pitch,

a second multiplicity of means for conductively signaling occupies a second area of said substrate at a second pitch,

a multiplicity of said transmission lines connects said first and second areas, and

said second area is larger than said first area.

23. A modular electronic system as defined in claim 19 wherein

a first multiplicity of said means for capacitively signaling between said chip and said substrate occupies a first area at a first pitch,

a second multiplicity of means for conductively signaling occupies a second area of said substrate at a second pitch,

a multiplicity of said transmission lines connects said first and second areas, and said second pitch is larger than said first pitch.

24. A modular electronic system as defined in claim 19 wherein

a first multiplicity of said means for capacitively signaling between said chip and said substrate occupies a first area at a first pitch,

a second multiplicity of means for capacitively signaling occupies a second area of said substrate at a second pitch,

a multiplicity of said transmission lines connects said first and second areas, and

said second area is larger than said first area.

25. A modular electronic system as defined in claim 19 wherein

a first multiplicity of said means for capacitively signaling between said chip and said substrate occupies a first area at a first pitch,

a second multiplicity of means for capacitively signaling occupies a second area of said substrate at a second pitch,

a multiplicity of said transmission lines connects said first and second areas, and said second pitch is larger than said first pitch.

26. An electronic system comprising:

a semiconductor chip;

a substrate;

a ground plane in said substrate;

a plurality of electronic devices implemented on said chip, a signal lead of at least one of said plurality of electronic devices coupled to a first half-capacitor attached to said chip; and

,

a second half-capacitor attached to said substrate and capacitively coupling a signal to said first half-capacitor.

27. A modular electronic system comprising:

a substrate;

a chip;

means for powering said chip;

means for capacitively signaling between said chip and said substrate comprising first and second coupled half-capacitors, said first half-capacitor being associated with said chip and said second half-capacitor being associated with said substrate, said first and second coupled half-capacitors comprising effectively overlapping conductive regions separated by a gap that is at least partially filled with a dielectric; and

a power connector extending through said dielectric.

28. A modular electronic system comprising:

a substrate;

a semiconductor chip;

means for powering said chip;

means for capacitively signalling between said chip and said substrate; and

signal leads connected on said substrate and said chip to said means for capacitively signalling;

wherein said means for capacitively signaling operates despite a substantial misalignment between said substrate and said chip.

29. A modular electronic system comprising:

a substrate;

a ground plane in said substrate;

a chip;

means for powering said chip;

means for capacitively signaling between said chip and said substrate comprising first and second coupled half-capacitors, said first half-capacitor being associated with said chip and said second half-capacitor being associated with said substrate, said first and second coupled half-capacitors comprising effectively overlapping conductive regions separated by a gap; and

an additional half-capacitor associated with one of said chip and said substrate.

30. A modular electronic system comprising:

a first module having a plurality of semiconductor electronic devices, a first half-capacitor and at least one signal lead connecting said electronic devices to said first half-capacitor;

a second module having a second half-capacitor, said modules being positioned such that said first and second half-capacitors provide a capacitive signal path between said first and second modules; and

contacts for supplying DC power to said first module from a source outside said first module.

31. A modular electronic system as defined in claim 30 wherein said fist and second half-capacitors are shaped such that the admittance of said capacitive signal path is substantially unaffected by a small misalignment between said first and second modules.

32. A modular electronic system as defined in claim 30 wherein the area of one of said half-capacitors is greater than the area of the other of said half-capacitors.

33. A modular electronic system as defined in claim 30 wherein the shape of one of said half-capacitors differs from the shape of the other half-capacitor.

34. A modular electronic system as defined in claim 33 wherein said shape of said one of said half-capacitors is designed to accommodate anticipated misalignment.

35. A modular electronic system as defined in claim 30 including further paired half-capacitors such that said capacitive signal path is distributed among multiple capacitors.

36. A modular electronic system as defined in claim 30 wherein said first module is positioned relative to said second module by motion transverse to said capacitive signal path.

37. A modular electronic system as defined in claim 30 wherein said second module is a cable, said cable including at least one non-coaxial wire.

38. A modular electronic system as defined in claim 30 wherein said first module further includes a transmission line that is connected to a plurality of transmission lines.

39. A modular electronic system as defined in claim 30 further comprising means for varying the admittance of said capacitive signal path by changing the effective area of overlap between said half-capacitors.

40. A modular electronic system as defined in claim 39 wherein said means for varying the admittance includes mechanical devices.

41. A modular electronic system comprising:

a substrate;

a ground plane supported by said substrate;

a semiconductor chip;

a first half-capacitor attached to said semiconductor chip;

a plurality of electronic devices implemented on said chip, a signal lead of at least one of said plurality of electronic devices coupled to said first half-capacitor; and

a second half-capacitor attached to said substrate and capacitively coupling a signal to said first half-capacitor.

42. The modular electronic system of claim 41 further comprising contacts for supplying DC power to said semiconductor chip from a source outside said chip.