Radiation emitting semiconductor device

• US 6,730,939 B2
• Filed: 02/12/2001
• Issued: 05/04/2004
• Est. Priority Date: 02/15/2000
• Status: Expired due to Term

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Mundbrod-Vangerow, Manfred, Kuehn, Frank, Strauss, Uwe, Eisert, Dominik, Zehnder, Ulrich, Haerle, Volker
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): FORDE, REMMON R
• Application Number:
  US09/781,753
• Publication Number:
  US 20030173575A1
• Time in Patent Office: 1,177 Days
• Field of Search: 257/98, 257/99, 257/81, 257/77, 257/94, 257/103, 257/623, 257/615
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/32257 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10155 being other than a cuboid
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A radiation-emitting semiconductor device with a multilayer structure comprising a radiation-emitting active layer, with electrical contacts for impressing a current in the multilayer structure and with a radiotransparent window layer. The window layer is arranged exclusively on the side of the multilayer structure facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer encompassing the second side wall portion forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.

Claims

1. A radiation-emitting semiconductor device comprising

a multilayer structure that contains a radiation-emitting active layer,

electrical contacts for impressing a current in the multilayer structure, and

a window layer being transparent to radiation, which

is disposed exclusively on the side of said multilayer structure facing away from a main direction of radiation of the semiconductor device,

has at least one side wall comprising a first side wall portion which extends obliquely, concavely or in a stepwise manner with respect to a central axis of the semiconductor device lying perpendicular to the multilayer sequence, and which in its subsequent extension toward the back side, viewed from said multilayer structure, changes over into a second side wall portion that extends perpendicularly to said multilayer structure, that is, parallel to said central axis, and

the portion of said window layer encompassing said second side wall portion forms a mounting pedestal for said semiconductor device.

2. The semiconductor device as recited in claim 1, wherein a growth substrate is used to grow said multilayer sequence and the window layer is fabricated from the growth substrate used to grow said multilayer sequence.

3. The semiconductor device as recited in claim 1, wherein said window layer is made of a material that has a refractive index and said multilayer sequence is made of a material that has a refractive index and the refractive index of the material of said window layer is higher than the refractive index of the material of said multilayer sequence, particularly of said active layer.

4. The semiconductor device as recited in claim 1, wherein said window layer is made of silicon carbide or is SiC-based and said multilayer sequence is fabricated of nitride-based semiconductor materials.

5. The semiconductor device as recited in claim 1, wherein said window layer has lateral sides and the lateral sides of said window layer comprise a first side wall portion and a second side wall portion.

6. The semiconductor device as recited in claim 1, wherein said first side wall portion is a planar oblique surface that forms with said central axis an angle that is between 20°

inclusively and 30°

inclusively.

7. The semiconductor device as recited in claim 1, wherein at least said first side wall portion is roughened.

8. A radiation-emitting optical device with a radiation-emitting semiconductor device as recited in claim 1, comprising a reflector cup that has oblique or parabaloid side walls and in which said semiconductor device is mounted in such a way that said window layer is oriented toward the floor of said reflector cup.

9. The semiconductor device as recited in claim 4, having a square lateral cross section, and wherein all four sides of said window layer comprise a planar, oblique, first side wall portion and wherein the ratio of the edge length of said multilayer structure to the edge length of said mounting pedestal is between 1.5 inclusively and 2 inclusively.

10. The radiation-emitting optical device as recited in claim 4 wherein said nitride-based semiconductor materials are GaN based semiconductor materials.

11. A radiation-emitting optical device as recited in claim 8, wherein said side walls of said reflector cup are coated with reflection-increasing material.

12. The radiation-emitting optical device as recited in claim 9 wherein said ratio is about 1.35.

13. The radiation-emitting optical device as recited in claim 11 wherein said side walls of said reflector cup are realized in such manner that the radiation emitted backwardly by said semiconductor device is reflected upwardly to said active layer, predominantly in one and the same direction, by the oblique side walls.

14. A radiation-emitting semiconductor device comprising

a multilayer structure that contains a radiation-emitting active layer,

electrical contacts for impressing a current in the multilayer structure, and

a window layer being transparent to radiation, which

is disposed exclusively on the side of said multilayer structure facing away from a main direction of radiation of the semiconductor device,

has at least one side wall comprising a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner with respect to a central axis of the semiconductor device lying perpendicular to the multilayer sequence, and which in its subsequent extension toward the back side, viewed from said multilayer structure, changes over into a second side wall, and

the portion of said window layer encompassing said second side wall portion forms a mounting pedestal for said semiconductor device.

15. The semiconductor device as recited in claim 14, wherein a growth substrate is used to grow said multilayer sequence and the window layer is fabricated from the growth substrate used to grow said multilayer sequence.

16. The semiconductor device as recited in claim 14, wherein said window layer is made of a material that has a refractive index and said multilayer sequence is made of a material that has a refractive index and the refractive index of the material of said indow layer is higher than the refractive index of the material of said multilayer sequence, particularly of said active layer.

17. The semiconductor device as recited in claim 14, wherein said window layer is made of silicon carbide or is SiC-based and said multilayer sequence is fabricated of nitride-based semiconductor materials.

18. The semiconductor device as recited in claim 14, wherein said window layer has lateral sides and all the lateral sides of said window layer comprise a first side wall portion and a second side wall portion.

19. The semiconductor device as recited in claim 14, wherein said first side wall portion is a planar oblique surface that forms with said central axis an angle that is between 20°

inclusively and 30°

inclusively.

20. The semiconductor device as recited in claim 14, wherein at least said first side wall portion is roughened.

21. A radiation-emitting optical device with a radiation-emitting semiconductor device as recited in claim 14, comprising a reflector cup that has oblique or parabaloid side walls and in which said semiconductor device is mounted in such a way that said window layer is oriented toward the floor of said reflector cup.

22. The semiconductor device as recited in claim 17, having a square lateral cross section, and wherein all four sides of said window layer comprise a planar, oblique, first side wall portion and wherein the ratio of the edge length of said multilayer structure to the edge length of said mounting pedestal is between 1.5 inclusively and 2 inclusively.

23. The radiation-emitting optical device as recited in claim 17 wherein said nitride-based semiconductor materials are GaN based semiconductor materials.

24. A radiation-emitting optical device as recited in claim 21, wherein said side walls of said reflector cup are coated with reflection-increasing material.

25. The radiation-emitting optical device as recited in claim 22 wherein said ratio is about 1.35.

26. The radiation-emitting optical device as recited in claim 24, wherein said side walls of said reflector cup are realized in such manner that the radiation emitted backwardly by said semiconductor device is reflected upwardly to said active layer, predominantly in one and the same direction, by the oblique side walls.