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Radiation emitting semiconductor device

  • US 6,730,939 B2
  • Filed: 02/12/2001
  • Issued: 05/04/2004
  • Est. Priority Date: 02/15/2000
  • Status: Expired due to Term
First Claim
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1. A radiation-emitting semiconductor device comprisinga multilayer structure that contains a radiation-emitting active layer, electrical contacts for impressing a current in the multilayer structure, and a window layer being transparent to radiation, which is disposed exclusively on the side of said multilayer structure facing away from a main direction of radiation of the semiconductor device, has at least one side wall comprising a first side wall portion which extends obliquely, concavely or in a stepwise manner with respect to a central axis of the semiconductor device lying perpendicular to the multilayer sequence, and which in its subsequent extension toward the back side, viewed from said multilayer structure, changes over into a second side wall portion that extends perpendicularly to said multilayer structure, that is, parallel to said central axis, and the portion of said window layer encompassing said second side wall portion forms a mounting pedestal for said semiconductor device.

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