Single crystal, dual wafer, tunneling sensor and a method of making same

• US 6,730,978 B2
• Filed: 05/06/2003
• Issued: 05/04/2004
• Est. Priority Date: 08/01/2000
• Status: Expired due to Fees

• Current Assignee: Hughes Electronics Corporation (Rtx Corporation), HRL Laboratories LLC (The Boeing Co.)
• Original Assignee: Hughes Electronics Corporation (Rtx Corporation), HRL Laboratories LLC (The Boeing Co.)
• Inventors: Little, Michael J., Hackett, LeRoy H., Kubena, Randall L.
• Primary Examiner(s): Coleman, W. David
• Application Number:
  US10/429,988
• Publication Number:
  US 20030207487A1
• Time in Patent Office: 364 Days
• Field of Search: 257/414, 257/417
• US Class Current: 257/414
• CPC Class Codes: B81B 2201/0292 Sensors not provided for in B81B2201/0207 - B81B2201/0285
• CPC Class Codes: B81C 1/0015 Cantilevers switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244
• CPC Class Codes: B81C 2203/036 Fusion bonding
• CPC Class Codes: H01H 59/0009 making use of micromechanics

Abstract

A method of making a micro electromechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

Claims

1. A MEM tunneling sensor assembly comprising:

(a) a beam structure and a mating structure defined on a first substrate or wafer;

(b) at least one contact structure and a mating structure defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer; and

(c) a bonding layer is disposed on at least one of said mating structures for bonding the mating structure, defined on the first substrate or wafer to the mating structure on the second substrate or wafer, the mating structures being joined one to another at said bonding layer.

2. A MEM tunneling sensor assembly as claimed in claim 1 wherein the first and second substrates or wafers are each formed of single crystal silicon.

3. A MEM tunneling sensor assembly as claimed in claim 2 wherein the crystalline structure of the silicon is <

100>

.

4. A MEM tunneling sensor assembly as claimed in claim 1 wherein the cantilevered beam structure is formed from an epitaxial layer of silicon on said first substrate or wafer, said epitaxial layer being doped with a dopant.

5. A MEM tunneling sensor assembly as claimed in claim 4 wherein the epitaxial layer is doped with Boron at a sufficient concentration to reduce the resistivity of the epitaxial layer to less than less than 0.05 Ω

-cm.

6. A MEM tunneling sensor assembly as claimed in claim 4 further including first and second ohmic contacts on said epitaxial layer, said second ohmic contact being disposed near a distal end of the beam structure and said first ohmic contact forming the mating structure on the first substrate or wafer.

7. A MEM tunneling sensor assembly as claimed in claim 4 wherein the first and second ohmic contacts are formed of layers of Ti, Pt and Au.

8. A MEM tunneling sensor assembly as claimed in claim 6 wherein a relatively thick layer of metal is disposed on the first and second ohmic contacts, a first portion of the relatively thick layer of metal being disposed on said first ohmic contact and providing the mating structure on the first substrate or wafer and a second portion of the relatively thick layer of metal forming a pointed contact on said second ohmic contact.

9. A MEM tunneling sensor assembly as claimed in claim 8 further including metal contacts disposed on said second substrate or wafer, at least one of said contacts on the second substrate or wafer defining the mating structure on the second substrate or wafer.

10. A MEM tunneling sensor assembly as claimed in claim 9 wherein the bonding layer is provided by a layer of Au—

Si eutectic disposed on the metal contact on said second substrate or wafer and/or by a layer of Au—

Si eutectic disposed on the first portion of the relatively thick layer of metal on the first substrate or wafer.

11. A MEM tunneling sensor assembly as claimed in claim 6 further including first and second ohmic contacts on said epitaxial layer, said second ohmic contact being disposed near a distal end of the beam structure and said first ohmic contact forming the mating structure on the first substrate or wafer.

12. A MEM tunneling sensor assembly for making a MEM sensor therefrom, the assembly comprising:

(a) a silicon beam structure and a mating structure defined on a first silicon substrate or wafer;

(b) at least one contact structure and a mating structure defined on a second silicon substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer; and

(c) a bonding layer disposed on at least one of said mating structures for bonding the mating structure defined on the first substrate or wafer to the mating structure on the second substrate or wafer.

13. A MEM tunneling sensor assembly as claimed in claim 12 wherein said bonding layer disposed on at least one of said mating structures is pressure/heat sensitive to bond said mating structure defined on the first substrate or wafer to said mating structure on the second substrate or wafer in response to the application of pressure/heat there between.

14. A MEM tunneling sensor assembly as claimed in claim 12 wherein the silicon forming the first silicon substrate or wafer is of a single crystalline structure and wherein the silicon forming the second silicon substrate or wafer is of a single crystalline structure.

15. A MEM tunneling sensor assembly as claimed in claim 14 wherein the silicon forming the first silicon substrate or wafer is n-type and wherein the silicon forming the second silicon substrate or wafer is n-type.

16. A MEM tunneling sensor assembly as claimed in claim 12 wherein a pointed contact is disposed on an end of said beam structure.

17. A MEM tunneling sensor assembly as claimed in claim 12 wherein the mating structures are joined one to another at said bonding layer.

18. A MEM tunneling sensor assembly as claimed in claim 12 wherein the cantilevered beam structure is formed from an epitaxial layer of silicon on said first substrate or wafer, said epitaxial layer being doped with a dopant.

19. A MEM tunneling sensor assembly as claimed in claim 18 wherein the epitaxial layer is doped with Boron at a sufficient concentration to reduce the resistivity of the epitaxial layer to less than less than 0.05 Ω

-cm.

20. A MEM tunneling sensor assembly as claimed in claim 19 further including first and second ohmic contacts on said epitaxial layer, said second ohmic contact being disposed near a distal end of the beam structure and said first ohmic contact forming the mating structure on the first substrate or wafer.

21. A MEM tunneling sensor assembly as claimed in claim 20 wherein the first and second ohmic contacts are formed of layers of Ti, Pt and Au.

22. A MEM tunneling sensor assembly as claimed in claim 20 wherein a relatively thick layer of metal is disposed on the first and second ohmic contacts, a first portion of the relatively thick layer of metal being disposed on said first ohmic contact and providing the mating structure on the first substrate or wafer and a second portion of the relatively thick layer of metal forming a pointed contact on said second ohmic contact.

23. A MEM tunneling sensor assembly as claimed in claim 18 further including metal contacts disposed on said second substrate or wafer, at least one of said contacts on the second substrate or wafer defining the mating structure on the second substrate or wafer.

24. A MEM tunneling sensor assembly as claimed in claim 23 wherein the bonding layer is provided by a layer of Au—

Si eutectic disposed on the metal contact on said second substrate or wafer and/or by a layer of Au—

Si eutectic disposed on the first portion of the relatively thick layer of metal on the first substrate or wafer.

25. A MEM tunneling sensor assembly as claimed in claim 18 further including first and second ohmic contacts on said epitaxial layer, said second ohmic contact being disposed near a distal end of the beam structure and said first ohmic contact forming the mating structure on the first substrate or wafer.