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Multi-trench region for accumulation of photo-generated charge in a CMOS imager

  • US 6,730,980 B2
  • Filed: 04/29/2003
  • Issued: 05/04/2004
  • Est. Priority Date: 08/28/2000
  • Status: Active Grant
First Claim
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1. A pixel sensor cell for use in an imaging device, said pixel sensor cell comprising:

  • a doped layer of a first conductivity type formed in a substrate;

    a plurality of trenched formed in said doped layer, each of said plurality of trenches having a plurality of sidewalls and a bottom;

    a first doped region of a second conductivity type formed at the sidewalls and bottom of each of said plurality of trenches;

    an insulating layer formed over said first doped region;

    a second doped region of a second conductivity type formed in said doped layer and positioned to receive charged from said first doped region of said plurality of trenches; and

    a reset transistor formed at the doped layer for periodically resetting a charge level of said second doped region, said second doped region being the source of said reset transistor.

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