Mountable microstructure and optical transmission apparatus

• US 6,730,990 B2
• Filed: 06/29/2001
• Issued: 05/04/2004
• Est. Priority Date: 06/30/2000
• Status: Expired due to Fees

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kondo, Takayuki, Shimoda, Tatsuya
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): Gebremariam, Samuel A
• Application Number:
  US09/895,825
• Publication Number:
  US 20020063310A1
• Time in Patent Office: 1,040 Days
• Field of Search: 257/625, 257/80-84, 257/93, 257/99, 257/184, 257/187, 257/195, 257/200-201, 257/278, 257/458, 257/466, 257/623, 257/10, 257/12-15, 438/455-456, 216/99
• US Class Current: 257/623
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/0216 using an intermediate compound, e.g. a glue or solder
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/0261 Non-optical elements, e.g. laser driver components, heaters H01S5/0265 takes precedence
• CPC Class Codes: H01S 5/0422 with n- and p-contacts on the same side of the active layer
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A mountable microstructure is provided for mounting with high positional accuracy a compound semiconductor element such as a surface emitting laser element engaged under gravity in concavities on an upper surface of a substrate. A surface emitting laser element 2 is formed on an upper surface of a Si block 1 formed at high accuracy in the same shape as concavities on the upper surface of a substrate by Si anisotropic etching. In the case of a surface emitting laser, since problems such as lattice mismatch occur when an epitaxial layer is grown on the Si substrate, the epitaxial layer 14 is grown on for example a GaAs substrate 11, and this is inverted to bond onto an Si substrate 17. Then after forming the surface emitting laser element 2, the Si block is shaped and divided up by anisotropic etching. Other elements may be formed on the Si block, however, in order to individually drive compound semiconductor elements, a high resistance layer 23 or a current blocking layer 24 is installed in an internal layer 22 between the two. If electrodes are provided on the upper surface of the Si substrate 17, prober inspection is facilitated.

Claims

1. A mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of a base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said base substance, wherein there is provided an Si block of a shape for engaging in said concavity on the upper surface of said base substance, and a compound semiconductor element formed on an upper surface of said Si block,

wherein a current blocking layer using a PN connection is provided between a compound semiconductor element electrode formed on the upper surface of said Si block and said Si block.

2. A mountable microstructure according to claim 1, wherein said Si block and said compound semiconductor element are bonded by a compound semiconductor-Si direct bonding.

3. A mountable microstructure according to claim 1, wherein said Si block and said compound semiconductor element are bonded by an InP—

Si direct bonding.

4. A mountable microstructure according to claim 1, wherein said Si block and said compound semiconductor element are bonded by a GaAs—

Si direct bonding.

5. A mountable microstructure according to claim 1, wherein said Si block and said compound semiconductor element are bonded via a metal film.

6. A mountable microstructure according to claim 1, wherein said Si block and said compound semi conductor element are bonded via solder.

7. A mountable microstructure according to claim 1, wherein said Si block and said compound semiconductor element are bonded via resin.

8. A mountable microstructure according to claim 1, wherein said Si block and said compound semiconductor element are bonded via an SiO₂ film.

9. A mountable microstructure according to claim 1, wherein said I block and said compound semiconductor element are bonded via an SiO₂ film and an AlGaAs layer.

10. A mountable microstructure according to claim 1, wherein a plurality of said compound semiconductor elements are formed on each Si block.

11. A mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of a base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said base substance, wherein there is provided an Si block of a shape for engaging in said concavity on the upper surface of said base substance, and a compound semiconductor element formed on an upper surface of said Si block;

wherein individual elements are formed on said Si block itself;

said individual elements formed on said Si block itself and said compound semiconductor element are arranged so as to overlap or face each other; and

a current blocking layer using a PN connection is provided between a compound semiconductor element electrode formed on the upper surface of said Si block and said Si block.

12. A mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of a base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said base substance, wherein there is provided an Si block of a shape for engaging in said concavity on the upper surface of said base substance, and a compound semiconductor element formed on an upper surface of said Si block;

wherein individual elements are formed on said Si block itself;

said individual elements formed on said Si block itself and said compound semiconductor element are arranged so as to be displaced from each other; and

a current blocking layer using a PN connection is provided between a compound semiconductor element electrode formed on the upper surface of said Si block and said Si block.

13. A mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of a base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said base substance, wherein there is provided an Si block of a shape for engaging in said concavity on the upper surface of said base substance, and a compound semiconductor element formed on an upper surface of said Si block;

and

wherein all of the electrodes for said compound semiconductor element are formed on the upper surface of said Si block; and

a current blocking layer using a PN connection is provided between said compound semiconductor element electrode formed on the upper surface of said Si block and said Si block.

14. A mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of a base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said base substance, wherein there is provided an Si block of a shape for engaging in said concavity on the upper surface of said base substance, and a compound semiconductor element formed on an upper surface of said Si block;

wherein any one of the electrodes for said compound semiconductor element is made common with the electrodes for said Si block; and

a current blocking layer using a PN connection is provided between said compound semiconductor element electrode formed on the upper surface of said Si block and said Si block.

15. A mountable microstructure according to claim 14, wherein a high resistance layer with a resistance greater than 1×

10⁴ Ω

is provided between said compound semiconductor element electrode and said Si block.

16. A mountable microstructure according to claim 15, wherein said high resistance layer comprises a compound semiconductor.

17. A mountable microstructure according to claim 15, wherein said high resistance layer comprises a compound semiconductor doped with Cr and O.

18. A mountable microstructure according to claim 15, wherein said high resistance layer comprises an oxide.

19. A mountable microstructure according to claim 15, wherein said high resistance layer comprises a nitride.

20. A mountable microstructure according to claim 15, wherein said high resistance layer comprises a resin.

21. A mountable microstructure according to claim 14, wherein said current blocking layer is formed by laminating layers of a P-type semiconductor and an N-type semiconductor in PNP or NPN order.

22. A mountable microstructure according to claim 21, wherein a contact layer in the immediate vicinity of said Si block is used as the P-type semiconductor or the N-type semiconductor constituting said current blocking layer.

23. An optical transmission apparatus comprising:

a first base substance with a first mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of the first base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said first base substance, wherein there is provided a Si block of a shape for engaging in said concavity on the upper surface of said first base substance, and a compound semiconductor element formed on an upper surface of said Si block, the first base substance including a light emitting element mounted in the concavity, and

a second base substance with a second mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of the second base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said second base substance, wherein there is provided a Si block of a shape for engaging in said concavity on the upper surface of said second base substance, and a compound semiconductor element formed on an upper surface of said Si block, which includes the second base substance including a light receiving element mounted in the concavity,

wherein the first base substance and the second base substance are laminated so that said light emitting element and said light receiving element face each other.

24. An optical transmission apparatus having a light emitting section comprising:

a first base substance with a mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of the first base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said first base substance, wherein there is provided a Si block of a shape for engaging in said concavity on the upper surface of said first base substance, and a compound semiconductor element formed on an upper surface of said Si block, and a light emitting element mounted in the concavity, and

a light receiving section comprising;

a second base substance with a mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of the second base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of said second base substance, wherein there is provided a Si block of a shape for engaging in said concavity on the upper surface of said second base substance, and a compound semiconductor element formed on an upper surface of said Si block, and a light receiving element mounted in the concavity wherein the first base substance and the second base substance are laminated so that said light emitting element and said light receiving element face each other.