Semiconductor integrated circuit device with vertically stacked conductor interconnections

• US 6,731,007 B1
• Filed: 07/10/2000
• Issued: 05/04/2004
• Est. Priority Date: 08/29/1997
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Noguchi, Junji, Owada, Nobuo, Saito, Tatsuyuki, Yamaguchi, Hizuru
• Primary Examiner(s): Cao, Phat X.
• Application Number:
  US09/613,138
• Time in Patent Office: 1,394 Days
• Field of Search: 257/762, 257/763, 257/765, 257/784
• US Class Current: 257/762
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76847 the layer being positioned within the main fill metal
• CPC Class Codes: H01L 21/7685 the layer covering a conductive structure H01L21/76849 takes precedence
• CPC Class Codes: H01L 21/76852 the layer also covering the sidewalls of the conductive structure
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76882 Reflowing or applying of pressure to better fill the contact hole
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/5283 Cross-sectional geometry
• CPC Class Codes: H01L 23/53228 the principal metal being copper
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01021 : Scandium [Sc]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

In a semiconductor integrated circuit device, upon connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layers, the uppermost one is made of a wiring material such as aluminum or aluminum alloy, while the lower one is made of Cu or Cu alloy. The lowest interconnection is made of a conductive material other than Cu or Cu alloy. For example, the conductive material which permits minute processing and has both low resistance and high EM resistance such as tungsten is employed.

Claims

1. A semiconductor integrated circuit device, comprising:

a first insulating film formed over a semiconductor substrate;

a first interconnection serving as a wiring line, buried in a surface of said first insulating film and including a first conductor film and a second conductor film having copper as a main component,

wherein said first conductor film is interposed between said second conductor film and said first insulating film and includes a function to suppress diffusion of copper;

a second insulating film formed over said first interconnection, said second insulating film including a function to suppress diffusion of copper;

a third insulating film formed over said second insulating film;

a second interconnection serving as a wiring line, including aluminum as a main component and formed over said third insulating film; and

a connecting conductor buried in said second insulating film and third insulating film,

wherein said connecting conductor is contacting said first interconnection and said second interconnection and includes a function to suppress diffusion of copper, and

wherein said second interconnection includes a wiring line and an electrode extending portion which is electrically connected to a pad portion and has a width larger than that of said wiring line.

2. A semiconductor integrated circuit device according to claim 1, wherein said second insulating film comprises a nitride film.

3. A semiconductor integrated circuit device according to claim 1, wherein said first conductor film has a thickness smaller than that of said second conductor film.

4. A semiconductor integrated circuit device according to claim 1, wherein said first conductor film is comprised of one selected from the group consisting of tungsten, titanium nitride, titanium, tantalum, tungsten nitride, tantalum nitride, tungsten silicide nitride, titanium silicide nitride and tantalum silicide nitride.

5. A semiconductor integrated circuit device according to claim 1, wherein said connecting conductor is comprised of one selected from the group consisting of tungsten, titanium nitride, titanium, tantalum, tungsten nitride, tantalum nitride, tungsten silicide nitride, titanium silicide nitride and tantalum silicide nitride.

6. A semiconductor integrated circuit deice according to claim 1, further comprising a passivation film over said second interconnection.

7. A semiconductor integrated circuit device according to claim 6, wherein said electrode extending portion includes said pad portion and is electrically connected with a bonding wire via an opening formed in said passivation film.

8. A semiconductor integrated circuit device according to claim 6, wherein said electrode extending portion includes said pad portion and is electrically connected with a bump electrode via an opening formed in said passivation film.

9. A semiconductor integrated circuit device according to claim 1,

wherein said second interconnection includes a third conductor film and a fourth conductor film having said aluminum as a main component,

wherein said third conductor film is formed between said third insulating film and said fourth conductor film and includes a high-melting point metal, and

wherein said third conductor film is formed between said fourth conductor film and said connecting conductor.

10. A semiconductor integrated circuit device according to claim 9, wherein said second interconnection further includes a barrier metal layer formed on said fourth conductor film such that said fourth conductor film is sandwiched between said barrier metal layer and said third conductor film.

11. A semiconductor integrated circuit device according to claim 9, wherein said electrode extending portion includes said pad portion electrically connected with a bonding wire or a bump electrode.

12. A semiconductor integrated circuit device according to claim 1, further comprising:

a fourth insulating film formed over said second interconnection; and

a third interconnection serving as said pad portion, formed over said fourth insulating film and including aluminum as a main component,

wherein said pad portion is electrically connected to a bonding wire or a bump electrode, and

wherein said third interconnection is electrically connected with said electrode extending portion through an opening formed in said fourth insulating film.

13. A semiconductor integrated circuit device according to claim 1, wherein said second interconnection is formed of a conductive film patterned to provide said wiring line, said electrode extending portion and said pad portion.

14. A semiconductor integrated circuit device according to claim 13, wherein said first interconnection is buried in a groove of said first insulating film by using a polishing method.

15. A semiconductor integrated circuit device, comprising:

a first insulating film formed over a semiconductor substrate;

a first interconnection serving as a wiring line, including copper as a main component and buried in a surface of said first insulating film;

a second insulating film formed over said first interconnection;

a second interconnection serving as a wiring line, including aluminum as a main component and formed over said second insulating film; and

a connecting conductor buried in said second insulating film and electrically connecting said first interconnection and said second interconnection,

wherein said first interconnection is covered with a barrier layer to suppress diffusion of copper, and

wherein said second interconnection is formed by patterning a layer to include a wiring line and an electrode extending portion which is electrically connected to a pad portion and has a width larger than that of said wiring line.

16. A semiconductor integrated circuit device according to claim 15, wherein said barrier layer comprises a first barrier film interposed between said first insulating film and said first interconnection and a second barrier film interposed between said first interconnection and said second insulating film.

17. A semiconductor integrated circuit device according to claim 16, wherein said first barrier film is comprised of one selected from the group consisting of tungsten, titanium nitride, titanium, tantalum, tungsten nitride, tantalum nitride, tungsten silicide nitride, titanium silicide nitride and tantalum silicide nitride.

18. A semiconductor integrated circuit device according to claim 16, wherein said second barrier layer is comprised of a silicon nitride film.

19. A semiconductor integrated circuit device according to claim 16, wherein said connecting conductor includes a function to suppress diffusion of copper.

20. A semiconductor integrated circuit device according to claim 19, wherein said connecting conductor is comprised of one selected from the group consisting of tungsten, titanium nitride, titanium, tantalum, tungsten nitride, tantalum nitride, tungsten silicide nitride, titanium silicide nitride and tantalum silicide nitride.

21. A semiconductor integrated circuit device according to claim 15, further comprising a passivation film over said second interconnection.

22. A semiconductor integrated circuit device according to claim 21, wherein said electrode extending portion includes said pad portion and is electrically connected with a bonding wire via an opening formed in said passivation film.

23. A semiconductor integrated circuit device according to claim 21, wherein said electrode extending portion includes said pad portion and is electrically connected with a bump electrode via an opening formed in said passivation film.

24. A semiconductor integrated circuit device according to claim 15,

wherein said second interconnection includes a first conductor film and a second conductor film having said aluminum as a main component,

wherein said first conductor film is formed between said second insulating film and said second conductor film and includes a high-melting point metal, and

wherein said first conductor film is formed between said second conductor film and said connecting conductor.

25. A semiconductor integrated circuit device according to claim 24, wherein said second interconnection further includes a barrier metal layer formed on said second conductor film such that said second conductor film is sandwiched between said barrier metal layer and said first conductor film.

26. A semiconductor integrated circuit device according to claim 24, wherein said electrode extending portion includes said pad portion electrically connected with a bonding wire or a bump electrode.

27. A semiconductor integrated circuit device according to claim 15,

wherein said second interconnection includes a first conductor film and a second conductor film having said aluminum as a main component,

wherein said first conductor film is formed between said second insulating film and said second conductor film and includes a high-melting point metal,

wherein said first conductor film is integrally formed with said connecting conductor, and

wherein said first conductor film and said connecting conductor serve as a barrier layer.

28. A semiconductor integrated circuit device according to claim 27, wherein said second interconnection includes a pad portion for electrically connecting to a bonding wire or a bump electrode.

29. A semiconductor integrated circuit device according to claim 16, wherein said second barrier film is comprised of a cap conductive layer including a function to suppress diffusion of copper.

30. A semiconductor integrated circuit device according to claim 15, further comprising:

a third insulating film formed over said second interconnection; and

a third interconnection serving as said pad portion, formed over said third insulating film and including aluminum as a main component,

wherein said pad portion is electrically connected to a bonding wire or a bump electrode, and

wherein said third interconnection is electrically connected with said electrode extending portion through an opening formed in said third insulating film.

31. A semiconductor integrated circuit device according to claim 15, wherein said second interconnection is formed of a conductive film patterned to provide said wiring line, said electrode extending portion and said pad portion.

32. A semiconductor integrated circuit device according to claim 31, wherein said first interconnection is buried in a groove of said first insulating film by using a polishing method.

33. A semiconductor integrated circuit device comprising:

a first interlayer insulating film formed over a semiconductor substrate and having a first groove;

a first interconnection serving as a wiring line, formed in said first groove and including a first conductor film and a first barrier film,

wherein said first conductor film includes copper as main component, and

wherein said first barrier film is interposed between said first conductor film and said first interlayer insulating film and includes a function to suppress diffusion of copper;

a second barrier film formed over said first interconnection and including a function to suppress diffusion of copper;

a second interlayer insulating film formed over said second barrier film and said first interlayer insulating film;

a second interconnection serving as a wiring line, formed over said second interlayer insulating film and including aluminum as a main component,

wherein said second interconnection is formed by patterning a layer to include a wiring line and a bonding pad portion which has a width larger than that of said wiring line, and

wherein a connecting conductor is buried in said second interlayer insulating film and electrically connects said first interconnection and said second interconnection; and

a surface passivation film formed over said second interconnection.

34. A semiconductor integrated circuit device according to claim 33, wherein said second interconnection is electrically connected to said first interconnection through a second conductor film including a function to suppress diffusion of copper.

35. A semiconductor integrated circuit device according to claim 34, wherein said bonding pad portion is electrically connected to a bonding wire.

36. A semiconductor integrated circuit device according to claim 34, wherein said bonding pad portion is electrically connected to a bump electrode.

37. A semiconductor integrated circuit device according to claim 33,

wherein said second interconnection includes a first conductor film and a second conductor film having said aluminum as a main component,

wherein said first conductor film is formed between said second interlayer insulating film and said second conductor film and includes a high-melting point metal, and

wherein said first conductor film is formed between said second conductor film and said connecting conductor.

38. A semiconductor integrated circuit device according to claim 37, wherein said second interconnection further includes a barrier metal layer formed on said second conductor film such that said second conductor film is sandwiched between said barrier metal layer and said first conductor film.

39. A semiconductor integrated circuit device according to claim 33,

wherein said second interconnection includes a first conductor film and a second conductor film having said aluminum as a main component,

wherein said first conductor film is formed between said second interlayer insulating film and said second conductor film and includes a high-melting point metal,

wherein said first conductor film is integrally formed with said connecting conductor, and

wherein said first conductor film and said connecting conductor serve as a barrier layer.

40. A semiconductor integrated circuit device according to claim 33, wherein said second barrier film is comprised of a cap conductive layer including a function to suppress diffusion of copper.

41. A semiconductor integrated circuit device according to claim 33, wherein said second interconnection is formed of a conductive film patterned to provide said wiring line, an electrode extending portion and said bonding pad portion.

42. A semiconductor integrated circuit device according to claim 41, wherein said first interconnection is buried in said groove by using a polishing method.

43. A semiconductor integrated circuit device comprising:

a first insulating film formed over a semiconductor substrate and having a groove;

a first interconnection serving as a wiring line, buried in said groove by using a polishing method and including a first conductor film and a first barrier film,

wherein said first conductor film includes copper as main component, and

wherein said first barrier film is interposed between said first conductor film and said first insulating film and includes a function to suppress diffusion of copper;

a second barrier film formed over said first interconnection and including a function to suppress diffusion of copper;

a second insulating film formed over said second barrier film and said first insulating film; and

a second interconnection serving as a wiring line, formed over said second insulating film and including aluminum as a main component,

wherein said second interconnection includes a pad portion for electrically connecting to a bonding wire or a bump electrode and is electrically connected to said first interconnection through a barrier metal,

wherein said second interconnection is formed by patterning a conductive film to provide said wiring line thereof, an electrode extending portion and said pad portion, and

wherein said pad portion has a width larger than that of said wiring line of said second interconnection.

44. A semiconductor integrated circuit device according to claim 43, wherein said pad portion is electrically connected to a bonding wire.

45. A semiconductor integrated circuit device according to claim 43, wherein said pad portion is electrically connected to a bump electrode.

46. A semiconductor integrated circuit device according to claim 43, wherein said second interconnection is electrically connected to said first interconnection through an opening formed in said second insulating film.

47. A semiconductor integrated circuit device according to claim 43,

wherein said second interconnection includes a second conductor film and a third conductor film having said aluminum as a main component,

wherein said second conductor film is formed between said second insulating film and said third conductor film and includes a high-melting point metal, and

wherein said second conductor film is formed between said third conductor film and said barrier metal.

48. A semiconductor integrated circuit device according to claim 47, wherein said second interconnection further includes a barrier metal layer formed on said third conductor film such that said third conductor film is sandwiched between said barrier metal layer and said second conductor film.

49. A semiconductor integrated circuit device according to claim 43,

wherein said second interconnection includes a second conductor film and a third conductor film having said aluminum as a main component,

wherein said second conductor film is formed between said second insulating film and said third conductor film and includes a high-melting point metal, and

wherein said second conductor film is integrally formed with said barrier metal.

50. A semiconductor integrated circuit device according to claim 43, wherein said second barrier film is comprised of a cap conductive layer including a function to suppress diffusion of copper.