Method for lapping a wafer

• US 6,733,368 B1
• Filed: 02/10/2003
• Issued: 05/11/2004
• Est. Priority Date: 02/10/2003
• Status: Expired due to Fees

• Current Assignee: SEH America, Inc. (Shin-Etsu Chemical Company Limited)
• Original Assignee: SEH America, Inc. (Shin-Etsu Chemical Company Limited)
• Inventors: Pan, Yi, Preece, Brazel G.
• Primary Examiner(s): Wilson, Lee D.
• Assistant Examiner(s): MCDONALD, SHANTESE L
• Application Number:
  US10/361,717
• Time in Patent Office: 456 Days
• Field of Search: 451/36, 451/41, 451/60, 451/177, 451/259, 451/262, 451/268, 451/447
• US Class Current: 451/36
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: B24B 57/02 for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Abstract

An improved method for lapping the opposed major surfaces of a wafer is provided. In this regard, a multi-step lapping process is provided in which lapping continues while transitioning from a first slurry having larger abrasive particles to a second slurry having smaller abrasive particles so as to reduce the overall length of the lapping process. In addition, the multi-step lapping process is optimized so as to remove no more than about 90 microns in total thickness from the opposed major surfaces of the wafer. By completing the lapping with slurry having smaller abrasive particles, subsequent etching of the wafers produces shallower surface pitting. As such, the wafers generally require less polishing than required by conventional processes.

Claims

1. A method for lapping first and second opposed major surfaces of a wafer comprising:

initially lapping the major surfaces with a first slurry;

introducing a second slurry having abrasive particles that are smaller on average than those of the first slurry; and

continuing to lap the major surfaces with the second slurry,

wherein introducing the second slurry occurs while continuing to lap the major surfaces such that the major surfaces are exposed to both the first and second slurries for at least a period of time,

wherein lapping the major surfaces with the first slurry removes more material than that removed by continuing to lap the major surfaces with the second slurry, and

wherein lapping the major surfaces with the first and second slurries collectively removes no more than about 90 microns in thickness.

2. A method according to claim 1 wherein continuing to lap the major surfaces while the second slurry is introduced removes no more than 25 microns in thickness.

3. A method according to claim 1 wherein lapping the major surfacing with the first and second slurries collectively removes no more than about 80 microns in thickness.

4. A method according to claim 3 wherein lapping the major surfaces with the first and second slurries collectively removes no more than about 70 microns in thickness.

5. A method according to claim 4 wherein continuing to lap the major surfaces while the second slurry is introduced removes no more than about 20 microns in thickness.

6. A method according to claim 1 wherein initially lapping the major surfaces with the first slurry comprises lapping the major surfaces with a first slurry that is no more than 1200 grit so as to have abrasive particles with an average size of at least about 8 microns.

7. A method according to claim 6 wherein lapping the major surfaces with a first slurry that is no more than 1200 grit comprises lapping the major surfaces with a first slurry that is not more than 1000 grit.

8. A method according to claim 1 wherein continuing to lap the major surfaces with the second slurry comprises continuing to lap the major surfaces with a second slurry that is at least 1500 grit so as to have abrasive particles with an average size of no more than about 6 microns.

9. A method for lapping first and second opposed major surfaces of a wafer comprising:

initially lapping the major surfaces with a first slurry so as to remove material from the major surfaces at a first removal rate;

introducing a second slurry; and

continuing to lap the major surfaces while introducing the second slurry, wherein continuing to lap the major surfaces comprises lapping the major surfaces with a combination of both the first and second slurries upon the initial introduction of the second slurry and thereafter lapping the major surfaces predominantly with the second slurry, and wherein lapping the major surfaces predominantly with the second slurry removes material from the major surfaces at a second removal rate less than the first removal rate and lapping the major surfaces with a combination of both the first and second slurries removes material from the major surfaces at a removal rate that transitions between the first and second removal rates, and

wherein lapping the major surfaces with the first and second slurries collectively removes no more than about 90 microns in thickness.

10. A method according to claim 9 wherein continuing to lap the major surfaces while the second slurry is introduced removes no more than 25 microns in thickness.

11. A method according to claim 9 wherein lapping the major surfaces with the first and second slurries collectively removes no more than about 80 microns in thickness.

12. A method according to claim 11 wherein lapping the major surfaces with the first and second slurries collectively removes no more than about 70 microns in thickness.

13. A method according to claim 12 wherein continuing to lap the major surfaces while the second slurry is introduced removes no more than about 20 microns in thickness.

14. A method according to claim 9 wherein initially lapping the major surfaces with the first slurry comprises lapping the major surfaces with a first slurry that is no more than 1200 grit so as to have abrasive particles with an average size of at least about 8 microns.

15. A method according to claim 14 wherein lapping the major surfaces with a first slurry that is no more than 1200 grit comprises lapping the major surfaces with a first slurry that is not more than 1000 grit.

16. A method according to claim 9 wherein continuing to lap the major surfaces with the second slurry comprises continuing to lap the major surfaces with a second slurry that is at least 1500 grit so as to have abrasive particles with an average size of no more than about 6 microns.

17. A method for lapping first and second opposed major surfaces of a wafer comprising:

initially lapping the major surfaces with a first slurry that is no more than 1200 grit so as to have abrasive particles with an average size of at least about 8 microns;

introducing a second slurry that is at least 1500 grit so as to have abrasive particles with an average size of no greater than about 6 microns

continuing to lap the major surfaces with the second slurry,

wherein introducing the second slurry occurs while continuing to lap the major surfaces such that the major surfaces are exposed to both the first and second slurries for at least a period of time,

wherein lapping the major surfaces with the first and second slurries collectively removes no more than about 90 microns in thickness; and

wherein continuing to lap the major surfaces once the second slurry is introduced removes no more than about 25 microns in thickness.

18. A method according to claim 17 wherein lapping the major surfaces with the first and second slurries collectively removes no more than about 80 microns in thickness.

19. A method according to claim 18 wherein lapping the major surfaces with the first and second slurries collectively removes no more than about 70 microns in thickness.

20. A method according to claim 19 wherein continuing to lap the major surfaces while the second slurry is introduced removes no more than about 20 microns in thickness.

21. A method according to claim 17 wherein lapping the major surfaces with a first slurry that is no more than 1200 grit comprises lapping the major surfaces with a first slurry that is not more than 1000 grit.