Plasma treatment for copper oxide reduction
First Claim
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1. A method of removing oxides on a substrate, comprising:
- introducing a reducing agent comprising nitrogen and hydrogen into a chamber;
initiating a plasma consisting essentially of the reducing agent in the chamber;
exposing a copper oxide to the plasma of the reducing agent; and
then depositing a silicon-based dielectric layer on the substrate without breaking vacuum after the copper oxide has been exposed to the plasma of the reducing agent, wherein the silicon-based dielectric layer comprises a material selected from the group of silicon carbide, silicon nitride, silicon oxide, and combinations thereof.
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Abstract
The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.
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Citations
18 Claims
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1. A method of removing oxides on a substrate, comprising:
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introducing a reducing agent comprising nitrogen and hydrogen into a chamber;
initiating a plasma consisting essentially of the reducing agent in the chamber;
exposing a copper oxide to the plasma of the reducing agent; and
thendepositing a silicon-based dielectric layer on the substrate without breaking vacuum after the copper oxide has been exposed to the plasma of the reducing agent, wherein the silicon-based dielectric layer comprises a material selected from the group of silicon carbide, silicon nitride, silicon oxide, and combinations thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of removing contaminants on a surface of a substrate, comprising:
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initiating a plasma consisting essentially of a reducing agent comprising nitrogen and hydrogen in a chamber;
exposing at least a portion of a surface having a copper oxide contaminant to the plasma consisting essentially of the reducing agent; and
thendepositing a silicon-based dielectric layer on the substrate without breaking vacuum after the copper oxide has been exposed to the plasma of the reducing agent, wherein the silicon-based dielectric layer comprises a material selected from the group of silicon carbide, silicon nitride, silicon oxide, and combinations thereof. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification