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Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device

  • US 6,734,497 B2
  • Filed: 09/27/2002
  • Issued: 05/11/2004
  • Est. Priority Date: 02/02/2001
  • Status: Expired due to Term
First Claim
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1. An insulated gate bipolar transistor comprising:

  • a semiconductor substrate having first and second major surfaces;

    a collector electrode which is located on said first major surface side of said semiconductor substrate; and

    an emitter electrode and a gate electrode that are located on said second major surface side, wherein said semiconductor substrate comprises;

    a collector layer of a first conductive type that is exposed to said first major surface and connected to said collector electrode; and

    a base layer of a second conductive type that is formed on said collector layer and is not exposed to said first major surface, and wherein said base layer and said collector layer have a characteristic as a freewheel diode.

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