S-band low-noise amplifier with self-adjusting bias for improved power consumption and dynamic range in a mobile environment

• US 6,735,424 B1
• Filed: 06/14/2000
• Issued: 05/11/2004
• Est. Priority Date: 06/14/2000
• Status: Expired

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Xiong, Wei, Larson, Lawrence
• Primary Examiner(s): Trost, William
• Assistant Examiner(s): RAMPURIA, SHARAD K
• Application Number:
  US09/595,508
• Time in Patent Office: 1,427 Days
• Field of Search: 455/1, 455/7, 455/11.1, 455/24, 455/26.1, 455/69, 455/115, 455/126, 330/285, 330/136
• US Class Current: 455/250.1
• CPC Class Codes: H03F 1/0272 by using a signal derived from the output signal
• CPC Class Codes: H03F 2200/105 A non-specified detector of the power of a signal being used in an amplifying circuit
• CPC Class Codes: H03F 2200/15 the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
• CPC Class Codes: H03F 2200/222 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
• CPC Class Codes: H03F 2200/294 the amplifier being a low noise amplifier [LNA]
• CPC Class Codes: H03F 2200/318 A matching circuit being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/372 Noise reduction and elimination in amplifier
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/411 the output amplifying stage of an amplifier comprising two power stages
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04

Abstract

A discrete low-noise amplifier designed to operate in a mobile wireless environment uses two cascaded GaAs FETs to achieve 25 dB gain and 0.9 dB noise figure at 2.5 GHz. Active bias control circuitry responsive to monitored amplifier output power automatically and continuously adjusts the drain-source currents, and the load lines, of the cascaded FETs to (i) maintain power consumption at 33 milliwatts in nominal small-signal conditions, and to (ii) provide an elevated input third-order intermodulation intercept point (IP3) and a reduced noise figure during the presence of jamming. A 15 dB improvement in the input IP3 is achieved in large-signal operation. Amplifier operation is supported by an a.c. power detector of enhanced sensitivity and responsiveness because of un-grounded operation.

Claims

1. A method of operating an amplifier, which amplifier has an load line,

to emulate the property of a class AB amplifier where increasing amplifier input current raises the d.c. bias of the amplifier and increases amplifier output current,

nonetheless that the amplifier will never enter class AB operation and will always operate in class A, the method of operating an amplifier always in class A nonetheless to producing more output current from more input current comprising:

monitoring the amplified output of the class A amplifier; and

, in response to detecting an increase in the amplifier output,

dynamically biasing the load line of the amplifier to a higher d.c. bias point, causing the amplifier to consume more power and to produce a still larger amplified output signal, nonetheless to maintaining operation of the amplifier always in class A.

2. The class A amplifier operating method according to claim 1 used on a class A amplifier serving as an initial low noise radio signal amplifier in a wireless communication system;

wherein an increase in amplifier output signal is indicative of a presence of a strong jammer component in the amplifier input signal, so that moving the load line of the amplifier will cause the amplifier to draw more current beneficially decreasing a noise figure while increasing gain of the amplifier, and causing the amplifier to reach a new steady state with higher power and improved linearity;

wherein when no increase in amplifier output signal is detected, indicative that no strong jammer component is present within the amplifier input signal, then neither the d.c. bias, nor the load line, will be raised, and the amplifier will operate quiescently, conserving power.

3. An amplifier comprising:

at least one Field Effect Transistor (FET) receiving at its gate an input signal from an external source and amplifying this input signal in accordance with its drain-source bias voltage V_DS to produce at its drain an amplified output signal;

a power detector circuit monitoring the amplified output signal to produce a detected-power voltage signal V_DD; and

a dynamic bias control circuit comparing the detected-power signal V_DD to the drain-source bias voltage V_DS to vary a gate-to-source voltage bias V_GS of the input signal, actively moving a load line of the FET so as to cause the FET to consume more power when the amplified output signal is large;

wherein when the amplified output signal is large because of a presence of a strong jammer component of the input signal, then the moved load line of the at least one FET will cause the FET to draw more current decreasing noise figure while increasing gain, and will cause the amplifier of which the at least one FET forms a part to reach a new steady state with higher power and improved linearity;

wherein, however, when no strong jammer component of the input signal is present, and when the amplified output signal is correspondingly not large, then the FET, and the amplifier of which it forms a part, will conserve power;

wherein a self-adjusting bias of the at least one FET results in improved power consumption and improved dynamic range in an environment where exists occasional strong jammer signals.

4. The amplifier according to claim 3 wherein the at least one Field Effect Transistor (FET) comprises:

two cascaded FETs.

5. The amplifier according to claim 4 wherein the each of the two cascaded FETS comprises:

a GaS FET.

6. The amplifier according to claim 4 wherein a first, input, one of the two cascaded FETs comprises:

a low-noise PHEMT; and

wherein a second, output, one of the two cascaded FETs comprises;

a hetero-junction FET.

7. The amplifier according to claim 3 wherein the dynamic bias control circuit comprises:

two operational amplifiers each varying a gate-to-source voltage bias V_GS of an associated FET.

8. The amplifier according to claim 3 wherein the power detector circuit comprises:

a resistor R; and

a first diode D₁ series connected to form a diode-limited resistive divider.

9. The amplifier according to claim 8 wherein the diode-limited resistive divider and first diode D₁ are both temperature compensated by a second diode D₂.

10. The amplifier according to claim 3 wherein the power detector circuit is temperature compensated.

11. The amplifier according to claim 3 operational in S band.

12. A circuit for detecting a peak power of an a.c. signal, the peak power detector circuit comprising:

a resistive voltage divider, located between a voltage source and ground, producing a reference voltage signal;

a diode connecting at its cathode to both the a.c. signal and to the reference voltage signal; and

an envelope detector connected both to the anode of the diode and to the reference voltage;

wherein output of the detector circuit appears across the envelope detector;

wherein when the a.c. signal is zero then the detector circuit output is equal to the reference voltage;

wherein when the a.c. signal is not zero then the detector circuit output is equal to a sum of (i) the reference voltage, and (ii) a voltage of an envelope of the a.c. signal, which voltage of the envelope of the a.c. signal is equivalent to the power of the a.c. signal.