Semiconductor-processing device provided with a remote plasma source for self-cleaning

• US 6,736,147 B2
• Filed: 01/18/2001
• Issued: 05/18/2004
• Est. Priority Date: 01/18/2000
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Fududa, Hideaki, Sato, Kazuo, Satoh, Kiyoshi
• Primary Examiner(s): Gulakowski, Randy
• Assistant Examiner(s): Winter, Gentle E.
• Application Number:
  US09/764,523
• Publication Number:
  US 20020011210A1
• Time in Patent Office: 1,216 Days
• Field of Search: 134/1, 134/1.1, 134/2, 134/3, 134/31, 134/21, 134/37, 134/11, 156/345, 156/643.1, 156/646.1, 156/657.1
• US Class Current: 134/1.1
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts

Abstract

A plasma CVD device includes a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber and the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber through the piping and changes solid substances that adhere to the inside of the reaction chamber in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping is made of materials that are not corroded by the active species; or (c) the piping is provided with a through-flow type valve.

Claims

1. A method of cleaning a chemical vapor deposition (CVD) reaction chamber with cleaning gas provided through a remote plasma discharge chamber, comprising:

dissociating cleaning gas within the remote plasma discharge chamber by applying energy with a power of less than about 3,000 W;

opening a valve on a piping after conducting a CVD reaction and prior to supplying activated species, wherein opening the valve comprises withdrawing a sealing element completely from a path to form an opening substantially as wide as internal surfaces of the piping;

supplying activated species from the remote plasma discharge chamber to the reaction chamber through the piping; and

removing adhered deposits from CVD reactions on a wall of the reaction chamber at a rate of greater than or equal to about 2.0 microns/minute.

2. The method of claim 1, further comprising closing the valve after removing the adhered deposits.

3. The method of claim 1, wherein the deposits on the reaction chamber wall comprise silicon nitride.

4. The method of claim 1, wherein the cleaning gas comprises fluorine-containing gas and the activated species comprises fluorine active species.

5. The method of claim 1, wherein the applied energy has a frequency between about 300 kHz and 500 kHz.

6. The method of claim 1, wherein supplying activated species comprises flowing NF₃ through the remote plasma discharge chamber at a rate between about 0.5 slm and 1.5 slm.

7. The method of claim 1, wherein dissociating comprises applying energy with a power between about 2,000 W and 3,000 W.