High-resolution method for patterning a substrate with micro-printing

• US 6,736,985 B1
• Filed: 05/05/1999
• Issued: 05/18/2004
• Est. Priority Date: 05/05/1999
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Agere Systems Incorporated (Broadcom, Inc.)
• Inventors: Bao, Zhenan, Makhjita, Anita, Rogers, John A.
• Primary Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US09/305,722
• Time in Patent Office: 1,840 Days
• Field of Search: 216/8, 216/9, 216/10, 216/13, 216/37, 216/41, 216/49, 216/54, 216/100, 438/99
• US Class Current: 216/13
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: H05K 3/0079 characterised by the method of application or removal of the mask H05K3/0091 takes precedence
• CPC Class Codes: H05K 3/061 Etching masks
• CPC Class Codes: H10K 71/10 Deposition of organic active material
• CPC Class Codes: H10K 71/221 by lift-off techniques
• CPC Class Codes: H10K 71/231 by etching of existing layers
• CPC Class Codes: H10K 71/621 Providing a shape to conductive layers, e.g. patterning or selective deposition

Abstract

A method is disclosed for producing a high-resolution patterned layer on a substrate for use in making electronic devices. The method comprises micro-printing an inked pattern on a substrate with use of a rotatable stamp; passing the substrate to an apparatus for etching or depositing materials on the substrate, where the inked pattern guides the etching or deposition of material; and then optionally removing the inked pattern from the substrate with the application of heat, ultraviolet light, or wet chemical means. A high-quality transistor with a 2-micron channel length may be fabricated using the inventive method. The method is compatible with rapid, reel-to-reel patterning and useful for a range of applications.

Claims

1. A method for forming at making an organic transistor on a substrate comprising the steps of:

providing a substrate including a metal surface layer;

providing a rotatable stamp having relief geometries on its surface to define a stamping surface;

applying a self assembled monolayer ink to the surface of the rotatable stamp to define an inked stamping surface;

rotating the rotatable stamp on the metal surface layer as the layer is placed in contact with the stamp to impress on the layer an inked pattern as defined by the inked stamping surface; and

patterning the layer by etching material from the layer wherein the inked stamping surface guides the etching in a geometry to define the patterned layer useful in fabricating an electronic device;

removing the inked pattern from the layer; and

applying an organic semiconductor layer overlying the etched metal layer.

2. The method of claim 1, in which the step of providing the rotatable stamp comprises:

(a) casting a liquid onto a surface having relief geometries thereon;

(b) solidifying tho liquid to define a solid film; and

(c) rolling a member over the solid film so that the solid film is lifted from the surface and bonds to the member.

3. The method of claim 2, in which the liquid comprises an elastomeric material, the step of solidifying the liquid comprises curing the elastomeric material to form an elastomeric film.

4. The method of claim 3, further comprising a step of exposing the cured elastomeric film to oxygen plasma before the member is rolled over the film.

5. The method of claim 1 in which the metal surface layer includes a thin layer of gold or silver.

6. The method of claim 1 in which the step of patterning the metal layer comprises etching material from the substrate applying an etchant selected from the group consisting of aqueous ferrocyanide, K₄Fe(CN)₆, K₃Fe(CN)₆, Na₂S₂O₃, and KOH in H₂O.

7. The method of claim 1, in which the step of rotating the stamp provides an exposed region the metal layer where substantially no ink is present and a protected region on the layer where ink substantially covers protected region.

8. The method of claim 1, in which the metal surface layer has an applied adhesive layer selected from the group consisting of Ti and Cr.

9. The method of claim 1 in which the inked pattern is removed by ultraviolet light, heat, or wet chemical cleaning.

10. The method of claim 2 wherein the member comprises a cylinder with a glass surface.