Silicon etching apparatus using XeF2
First Claim
1. A method for etching a silicon wafer using XeF2 not disassociated by plasma generating means, comprising steps of:
- (a) etching a silicon wafer using an etching apparatus comprising a loading chamber for loading XeF2, an expansion chamber for collecting sublimated XeF2 from the said loading chamber, and an etching chamber for etching using XeF2 not disassociated by plasma generating means supplied from the said expansion chamber;
(b) eliminating air moisture in each chamber to prevent formation of HF by injecting nitrogen to the loading chamber, the expansion chamber and the etching chamber, and exhausting the injected nitrogen therefrom prior to the said step (a); and
(c) controlling the internal pressure of the loading chamber at a level between sublimation pressure of XeF2 and atmospheric pressure to prevent sublimation of the residual XeF2 in the loading chamber after the said step (a).
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Accused Products
Abstract
The silicon etching apparatus using XeF2 includes: a basic structure composed of a loading chamber tot loading XeF2, an expansion chamber for collecting sublimated XeF2 gas, and an etching chamber for performing an etching process; and a means for injecting nitrogen prior to the etching process to eliminate air moisture in the apparatus and thus preventing the formation of HF. The silicon etching apparatus using XeF2 further includes: an injector having a predefined shape provided in the etching chamber for uniformly injecting the XeF2 gas downward on to surface of a wafer; a feedback controller for feedback controlling the internal pressure of the loading chamber in order to prevent sublimation of the residual XeF2 in the loading chamber; and a weight scale for measuring the weight of XeF2 in the loading chamber.
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Citations
5 Claims
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1. A method for etching a silicon wafer using XeF2 not disassociated by plasma generating means, comprising steps of:
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(a) etching a silicon wafer using an etching apparatus comprising a loading chamber for loading XeF2, an expansion chamber for collecting sublimated XeF2 from the said loading chamber, and an etching chamber for etching using XeF2 not disassociated by plasma generating means supplied from the said expansion chamber;
(b) eliminating air moisture in each chamber to prevent formation of HF by injecting nitrogen to the loading chamber, the expansion chamber and the etching chamber, and exhausting the injected nitrogen therefrom prior to the said step (a); and
(c) controlling the internal pressure of the loading chamber at a level between sublimation pressure of XeF2 and atmospheric pressure to prevent sublimation of the residual XeF2 in the loading chamber after the said step (a). - View Dependent Claims (2, 3)
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4. A method for etching a silicon wafer using XeF2 not disassociated by plasma generating means, which method comprises:
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(a) eliminating air moisture in a loading chamber, an expansion chamber, and an etching chamber to prevent formation of HF by injecting nitrogen to the loading chamber, the expansion chamber and the etching chamber and exhausting the injected nitrogen therefrom;
(b) thereafter loading XeF2 not disassociated by plasma generating means in said loading chamber;
(c) collecting sublimated XeF2 from said loading chamber in said expansion chamber;
(d) etching said silicon wafer in an etching chamber using XeF2 supplied from said expansion chamber; and
(e) controlling internal pressure of the loading chamber at a level between sublimation pressure of XeF2 and atmospheric pressure to prevent sublimination of residual XeF2 in the loading chamber. - View Dependent Claims (5)
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Specification