Silicon etching apparatus using XeF2

• US 6,736,987 B1
• Filed: 07/12/2000
• Issued: 05/18/2004
• Est. Priority Date: 07/12/2000
• Status: Expired due to Fees

• Current Assignee: Techbank Corporation
• Original Assignee: Techbank Corporation
• Inventors: Cho, Dong-Il
• Primary Examiner(s): Hassanzadeh, Parviz
• Application Number:
  US09/614,785
• Time in Patent Office: 1,406 Days
• Field of Search: 156/345.1, 156/345.26, 156/345.29, 118/715, 438/706, 438/710, 438/719, 438/711, 438/712, 438/714, 216/59, 216/58, 216/67, 216/69
• US Class Current: 216/58
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

The silicon etching apparatus using XeF₂ includes: a basic structure composed of a loading chamber tot loading XeF₂, an expansion chamber for collecting sublimated XeF₂ gas, and an etching chamber for performing an etching process; and a means for injecting nitrogen prior to the etching process to eliminate air moisture in the apparatus and thus preventing the formation of HF. The silicon etching apparatus using XeF₂ further includes: an injector having a predefined shape provided in the etching chamber for uniformly injecting the XeF₂ gas downward on to surface of a wafer; a feedback controller for feedback controlling the internal pressure of the loading chamber in order to prevent sublimation of the residual XeF₂ in the loading chamber; and a weight scale for measuring the weight of XeF₂ in the loading chamber.

Claims

1. A method for etching a silicon wafer using XeF₂ not disassociated by plasma generating means, comprising steps of:

(a) etching a silicon wafer using an etching apparatus comprising a loading chamber for loading XeF₂, an expansion chamber for collecting sublimated XeF₂ from the said loading chamber, and an etching chamber for etching using XeF₂ not disassociated by plasma generating means supplied from the said expansion chamber;

(b) eliminating air moisture in each chamber to prevent formation of HF by injecting nitrogen to the loading chamber, the expansion chamber and the etching chamber, and exhausting the injected nitrogen therefrom prior to the said step (a); and

(c) controlling the internal pressure of the loading chamber at a level between sublimation pressure of XeF₂ and atmospheric pressure to prevent sublimation of the residual XeF₂ in the loading chamber after the said step (a).

2. The method for etching a silicon wafer using XeF₂ as claimed in claim 1, wherein the XeF₂ gas is injected on the surface of the wafer with a viscous laminar downflow using an injector having a predefined shape provided in the etching chamber for uniform etching of the wafer in step (a).

3. The method for etching a silicon wafer using XeF₂ as claimed in claim 1, including weighing the residual XeF₂ gas in the loading chamber at any time during the step (a) to estimate the remaining time for performing the etching step with the residual XeF₂.

4. A method for etching a silicon wafer using XeF₂ not disassociated by plasma generating means, which method comprises:

(a) eliminating air moisture in a loading chamber, an expansion chamber, and an etching chamber to prevent formation of HF by injecting nitrogen to the loading chamber, the expansion chamber and the etching chamber and exhausting the injected nitrogen therefrom;

(b) thereafter loading XeF₂ not disassociated by plasma generating means in said loading chamber;

(c) collecting sublimated XeF₂ from said loading chamber in said expansion chamber;

(d) etching said silicon wafer in an etching chamber using XeF₂ supplied from said expansion chamber; and

(e) controlling internal pressure of the loading chamber at a level between sublimation pressure of XeF₂ and atmospheric pressure to prevent sublimination of residual XeF₂ in the loading chamber.

5. A method for etching as set forth in claim 4 including injecting said XeF₂ gas on a surface of said silicon wafer with a viscous laminar downflow.