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Method for manufacturing a thin gate dielectric layer for integrated circuit fabrication

  • US 6,737,362 B1
  • Filed: 02/28/2003
  • Issued: 05/18/2004
  • Est. Priority Date: 02/28/2003
  • Status: Expired due to Fees
First Claim
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1. A method for forming a gate oxide layer for devices of small feature sizes, the method comprising:

  • forming a gate oxide layer on a substrate;

    applying a nitridation process on the formed gate oxide layer;

    etching the gate oxide layer back to a predetermined thickness after the nitridation process; and

    applying an anneal process using an oxygen environment on the etched gate oxide.

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