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Transistor and method of manufacturing the same

  • US 6,737,704 B1
  • Filed: 09/12/2000
  • Issued: 05/18/2004
  • Est. Priority Date: 09/13/1999
  • Status: Expired due to Term
First Claim
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1. A transistor comprising:

  • a semiconductor substrate having a semiconductor layer, a drain layer of a first conductivity type provided on said semiconductor layer and a conductive region of a second conductivity type formed by diffusing an impurity of the second conductivity type from a surface of said drain layer;

    surface of said source region, said contiguous source electrode film covering a plurality of openings of said trenches in their entireties,said source region being substantially square when viewed from a direction parallel to said side surface of said trench; and

    a metal film formed on a surface of said drain layer opposite to said conductive region to establish Schottky contact with said drain layer.

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