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Direct read of DRAM cell using high transfer ratio

  • US 6,738,300 B2
  • Filed: 08/26/2002
  • Issued: 05/18/2004
  • Est. Priority Date: 08/26/2002
  • Status: Active Grant
First Claim
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1. A circuit for performing precharge in a memory system, the circuit comprising:

  • a memory cell;

    a local bitline;

    a wordline coupling said memory cell to said local bitline;

    a global bitline;

    a first transistor having its gate connected to said global bitline, its source terminal connected to a first power supply and its drain terminal connected to said local bitline;

    a second transistor having its gate connected to said local bitline, its source terminal connected to a second power supply and its drain terminal connected to said global bitline;

    a third transistor having its gate connected to a read signal, its drain terminal connected to said local bitline and its source terminal connected to a fourth transistor at its drain terminal; and

    said fourth transistor having its gate connected to said global bitline.

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