SMT passive device noflow underfill methodology and structure

• US 6,739,497 B2
• Filed: 05/13/2002
• Issued: 05/25/2004
• Est. Priority Date: 05/13/2002
• Status: Active Grant

• Current Assignee: Veeco Instruments Incorporated
• Original Assignee: International Business Machines Corporation
• Inventors: Langevin, Pierre M., Vincent, Michael B., Tran, Son K., Fortin, Clément J.
• Primary Examiner(s): STONER, KILEY SHAWN
• Application Number:
  US10/145,467
• Publication Number:
  US 20030209590A1
• Time in Patent Office: 743 Days
• Field of Search: 228/180.22, 228/214, 228/223, 228/224, 228/233.2, 228/234.1, 228/215
• US Class Current: 228/215
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 2201/10636 Leadless chip, e.g. chip capacitor or resistor
• CPC Class Codes: H05K 2201/10977 Encapsulated connections applying non-metallic protective coatings for encapsulating mounted components H05K3/284
• CPC Class Codes: H05K 3/284 for encapsulating mounted components H05K1/185 takes precedence
• CPC Class Codes: H05K 3/305 Affixing by adhesive
• CPC Class Codes: H05K 3/3442 having edge contacts, e.g. leadless chip capacitors, chip carriers
• CPC Class Codes: H05K 3/3489 Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
• CPC Class Codes: H05K 3/3494 Heating methods for reflowing of solder using integral heating means H05K1/0212
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An electronic fabrication process and structure is provided for attaching discrete passive surface mount devices (SMD) to a substrate in a single step. A liquid noflow resin encapsulant containing flux material is dispensed between presoldered pads on a substrate. The SMD, having a pair of electrical contacts, is pressed into said encapsulant so that the electrical contacts make contact with said presoldered pads. Heat is applied to first activate said flux material and then reflow the solder on said presoldered pads to bond said SMD contacts to said presoldered pads. The reflow temperature is maintained for about 180 seconds during which time the resin solidifies. The resin encapsulant fills the space between substrate and SMD and forms fillets around the solder bonded contacts.

Claims

1. A method of fabricating an electronic assembly, comprising:

forming a mound of solder on each of at least a pair of electrical contacts on a substrate so as to form at least a pair of solder mounds;

applying a noflow resin encapsulant containing a flux material between said at least a pair of solder mounds so that said encapsulant partially covers said solder mounds;

pressing a passive SMD having at least a pair of electrical contacts into said resin encapsulant so that the said at least a pair of electrical contacts of said passive SMD respectively make contact with the said at least a pair of solder mounds; and

applying heat to said substrate and passive SMD so that initially said flux material is activated to prepare said electrical contacts for solder wetting and then said solder mounds melt and reflow to bond said electrical contacts and said resin encapsulant is cured.

2. The method as set forth in claim 1 wherein said step of applying heat comprises applying heat at a ramp rate between about 1.4°

C./sec. and about 2°

C./sec. up to the melting point of said solder mounds and then maintaining a temperature above the said melting point of said solder mounds for more than 90 sec.

3. The method as set forth in claim 2 wherein said temperature is maintained above the said melting point of said solder mounds for at least 180 sec.

4. The method as set forth in claim 2 wherein said melting point is about 183°

C.

5. The method as set forth in claim 4 wherein said ramp rate is about 1.70°

C./sec.

6. The method as set forth in claim 5 wherein the temperature maintained above the said melting point of said solder mounds peaks at about 230°

C.

7. The method as set forth in claim 6 wherein said step of dispensing noflow resin encapsulant between said solder mounds comprises dispensing an amount so as to form a mound of encapsulant to cover the highest point of each of said solder mounds.

8. The method as set forth in claim 7 wherein passive SMD is a capacitor device.

9. The method as set forth in claim 8 wherein said substrate is a laminate.

10. The method as set forth in claim 9 wherein said solder mounds comprise 63% Sn/37% Pb.

11. A method of assembling an SMD on a substrate, comprising:

forming a solder mound on each of at least a pair of electrical contacts on a substrate so as to form at least a pair of solder mounds;

dispensing a noflow liquid encapsulant including both flux material and resin underfill encapsulant onto said substrate in the space between said at least a pair of solder mounds in sufficient quantity so as to form a mound of encapsulant which partially covers said solder mounds;

pressing a passive SMD having at least a pair of electrical contacts into said mound of encapsulant so that respective ones of said at least a pair of electrical contacts of said passive SMD made contact with said at least a pair of solder mounds;

applying heat to said substrate and passive SMD so that said flux material is initially activated to prepare said electrical contacts for solder wetting; and

applying further heat to said substrate and passive SMD to melt and reflow said solder bumps so as to bond to said contacts and cause said resin encapsulant to form solid fillets around said SMD contacts and reflowed solder and fill the space between said SMD and substrate.

12. The method as set forth in claim 11 wherein said steps of applying heat comprise applying heat at a ramp rate of between about 1.4°

C./sec. and about 2°

C./sec. up to the melting point of said solder mounds and then maintaining a temperature above the said melting point of said solder mounds for more than 90 sec.

13. The method as set forth in claim 12 wherein said temperature is maintained above the said melting point of said solder mounds for at least 180 sec.

14. The method as set forth in claim 12 wherein said melting point is about 183°

C.

15. The method as set forth in claim 14 wherein said ramp rate is about 1.70°

C./sec.

16. The method as set forth in claim 12 wherein steps of dispensing said noflow liquid encapsulant to form a mound of encapsulant comprises dispensing said encapsulant in a quantity to form a mound higher than said solder mounds so as to cover at least a half of each of said solder mounds.

17. The method as set forth in claim 13 wherein said SMD is a capacitor device.