Display device and method of fabricating the display device
First Claim
1. A method of fabricating a display device, comprising the steps of:
- forming an electrode;
forming an insulating film on said electrode;
patterning a mask on said insulating film;
shaping said insulating film by etching using at least a first reactive gas and a second reactive gas;
removing said mask; and
forming an electroluminescence film on said insulating film, wherein said etching comprises a first etching step in which the flow rate of said first reactive gas to said second reactive gas is increased with time, a second etching step in which the flow rates of said first reactive gas and said second reactive gas is constant, and a third etching step in which the flow rate of said first reactive gas to said second reactive gas is reduced with time.
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Accused Products
Abstract
In an EL element having an anode, an insulating film (bump) formed on the anode, and an EL film and a cathode formed on the insulating film, each of a bottom end portion and a top end portion of the insulating film is formed so as to have a curved surface. The taper angle of a central portion of the insulating film is set within the range from 35° to 70°, thereby preventing the gradient of the film forming surface on which the EL film and the cathode are to be formed from being abruptly changed. On the thus-formed film forming surface, the EL film and the cathode can be formed so as to be uniform in thickness, so that occurrence of discontinuity in each of EL film and the cathode is prevented.
234 Citations
29 Claims
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1. A method of fabricating a display device, comprising the steps of:
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forming an electrode;
forming an insulating film on said electrode;
patterning a mask on said insulating film;
shaping said insulating film by etching using at least a first reactive gas and a second reactive gas;
removing said mask; and
forming an electroluminescence film on said insulating film, wherein said etching comprises a first etching step in which the flow rate of said first reactive gas to said second reactive gas is increased with time, a second etching step in which the flow rates of said first reactive gas and said second reactive gas is constant, and a third etching step in which the flow rate of said first reactive gas to said second reactive gas is reduced with time. - View Dependent Claims (2, 3, 4)
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5. A method of fabricating a display device, comprising:
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applying an organic film having polyamic acid as a main component on an electrode;
heat-treating said organic film at a temperature within the range from 50 to 150°
C.;
forming a mask on said organic film;
performing exposure of said mask;
selectively dissolving portions of said mask and said organic film in a basic developer;
removing said mask;
heat-treating said organic film at a temperature within the range from 180 to 350°
C. to form a polyimide resin film; and
forming an electroluminescence film on said polyimide resin film. - View Dependent Claims (6, 7)
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8. A method of fabricating a display device, comprising the steps of:
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forming an electrode on an insulating surface;
forming an insulating film over said first electrode;
forming a mask on said insulating film;
selectively etching a portion of said insulating film in accordance with said mask by using at least first and second reactive gases, thereby, exposing a portion of said electrode from said insulating film, said first reactive gas comprising a fluoride gas, wherein a flow rate of said first reactive gas with respect to said second reactive gas is kept constant during a certain period, and said flow rate is decreased during the next period. - View Dependent Claims (9, 10, 11)
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12. A method of fabricating a display device, comprising the steps of:
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forming an electrode on an insulating surface;
forming an insulating film over said first electrode;
forming a mask on said insulating film;
selectively etching a portion of said insulating film in accordance with said mask by using at least first and second reactive gases, thereby, exposing a portion of said electrode from said insulating film, said first reactive gas comprising a fluoride gas, wherein a flow rate of said first reactive gas with respect to said second reactive gas is increased during a first period of the etching, said flow rate is kept constant during a second period of the etching after said first period, and said flow rate is decreased during a third period of the etching after said second period. - View Dependent Claims (13, 14, 15)
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16. A method of fabricating a display device, comprising the steps of:
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forming an organic film on an electrode;
heat treating said organic film;
forming a mask on said organic film;
performing exposure of said mask;
immersing said mask and said organic film in a basic developer;
removing said mask;
heat treating said organic film; and
forming an electroluminescence film on said organic film and said electrode. - View Dependent Claims (17, 18)
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19. A method of fabricating a display device, comprising the steps of:
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forming an organic film on an electrode;
heating said organic film;
forming a mask on said organic film;
performing exposure of said mask;
removing said mask;
etching said organic film isotropically; and
forming an electroluminescence film on said organic film and said electrode. - View Dependent Claims (20, 21)
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22. A method of fabricating a display device, comprising the steps of:
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forming an organic film on an electrode;
heating said organic film;
forming a mask on said organic film;
performing exposure of said mask by irradiating an ultraviolet ray through a photomask;
removing said mask;
etching said organic film isotropically; and
forming an electroluminescence film on said organic film and said electrode. - View Dependent Claims (23, 24, 25)
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26. A method of fabricating a display device, comprising the steps of:
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forming a thin film transistor over a substrate;
forming an insulating film over said thin film transistor;
forming a mask on said insulating film;
selectively etching a portion of said insulating film in accordance with said mask by using at least first and second reactive gases;
wherein a flow rate of said first reactive gas with respect to said second reactive gas is increased during a first period of the etching, said flow rate is kept constant during a second period of the etching after said first period, and said flow rate is decreased during a third period of the etching after said second period. - View Dependent Claims (27, 28, 29)
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Specification