Method of separating two layers of material from one another
First Claim
1. A method of separating two layers of material from one another and substantially completely preserving each of the two layers of material, the method which comprises:
- providing two layers of material having an interface boundary between the two layers, one of the two layers of material being a substrate and the other of the two layers of material being a semiconductor body having a layer of group III nitride material or a layer system of group III nitride materials;
irradiating the interface boundary between the two layers or a region in vicinity of the interface boundary with electromagnetic radiation through the substrate;
absorbing the electromagnetic radiation at the interface or in the region in the vicinity of the interface and initiating decomposition of group III nitride material of the layer or of the layer system and the formation of nitrogen gas.
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Abstract
A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, is exposed to electromagnetic radiation through one of the two layers of material. The electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interface.
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Citations
31 Claims
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1. A method of separating two layers of material from one another and substantially completely preserving each of the two layers of material, the method which comprises:
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providing two layers of material having an interface boundary between the two layers, one of the two layers of material being a substrate and the other of the two layers of material being a semiconductor body having a layer of group III nitride material or a layer system of group III nitride materials;
irradiating the interface boundary between the two layers or a region in vicinity of the interface boundary with electromagnetic radiation through the substrate;
absorbing the electromagnetic radiation at the interface or in the region in the vicinity of the interface and initiating decomposition of group III nitride material of the layer or of the layer system and the formation of nitrogen gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of separating two layers of material from one another and substantially completely preserving each of the two layers of material, the method which comprises:
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providing two layers of material having an interface boundary between the two layers, one of the two layers of material being a substrate and the other of the two layers of material being a semiconductor body having a layer of group III nitride material or a layer system of group III nitride materials;
providing a sacrificial layer at the interface boundary, the sacrificial layer being formed of a group III nitride material or a layer system of group III nitride materials having an optical band gap smaller than a band gap of one of the two layers;
irradiating the interface boundary between the two layers or a region in vicinity of the interface boundary with electromagnetic radiation through one of the two layers;
absorbing the electromagnetic radiation at the interface or in the region in the vicinity of the interface with the sacrificial layer and initiating decomposition of group III nitride material of the layer or of the layer system and the formation of nitrogen gas. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification