Semiconductor package for series-connected diodes

• US 6,740,902 B2
• Filed: 02/28/2003
• Issued: 05/25/2004
• Est. Priority Date: 09/04/2002
• Status: Expired due to Term

• Current Assignee: Siliconix Technology CV (Vishay Intertechnology Incorporated)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Oliver, Stephen, Richard, Hugh D.
• Primary Examiner(s): Zarneke, David A.
• Application Number:
  US10/377,683
• Publication Number:
  US 20040041230A1
• Time in Patent Office: 452 Days
• Field of Search: 257/81, 257/88, 257/99
• US Class Current: 257/81
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48724 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/83101 as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/8319 Arrangement of the layer connectors prior to mounting
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/33 of a plurality of layer connectors
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

Two series-connected diodes which are housed in a power package (such as but not limited to TO220, TO220FP, D2pak, TO247, etc.).

Claims

1. A semiconductor device package comprising:

a first diode having an anode electrode and a cathode electrode and being capable of blocking a reverse current up to a first rated voltage;

a second diode having an anode electrode and a cathode electrode and being capable of blocking the reverse current un to a second rated voltage; and

a common conductive pad;

wherein said cathode electrode of said first diode is electrically connected to said anode electrode of said second diode by said common conductive pad, said anode electrode of said first diode is wire bondable and disposed on a major surface of said first diode occluding substantially all of said major surface of said first diode and said cathode electrode of said first diode is disposed on an opposing major surface of said first diode, and wherein said anode electrode of said second diode is disposed on a major surface of said second diode and said cathode electrode of said second diode is wire bondable and is disposed on an opposing major surface of said second diode occluding substantially all of said opposing major surface of said second diode.

2. A semiconductor device package according to claim 1, wherein said cathode electrode of said first diode is electrically connected and physically mounted to said common conductive pad by a layer of conductive adhesive, and wherein said anode electrode of said second diode is electrically connected and physically mounted to said common conductive pad by a layer of conductive adhesive, solder or adhesive tape.

3. A semiconductor device package according to claim 1, further comprising a first external lead electrically connected to said anode electrode of said first diode and a second external lead electrically connected to said cathode electrode of said second diode.

4. A semiconductor device package according to claim 3, wherein said first external lead and said anode electrode are connected by at least one bond wire and said second external lead and said cathode electrode are connected by at least another bond wire.

5. A semiconductor device package according to claim 1, further comprising a molded housing enclosing said first diode and said second diode.

6. A semiconductor device package according to claim 5, wherein a bottom surface of said common conductive pad is exposed out of said molded housing.

7. A semiconductor device package according to claim 1, further comprising a first external lead integrally connected to said common conductive pad to form a unitary paddle-shaped body, a second external lead electrically connected to said anode electrode of said first diode and a third external lead electrically connected to said cathode electrode of said second diode, wherein said first external lead, said second external lead and said third external lead are parallel and extend from a common side of said semiconductor device package.

8. A semiconductor device package according to claim 1, wherein said first diode and said second diode are disposed in one of a TO220, TO220FT, D2 pak, Dpak, and TO247 semiconductor device package,) the semiconductor device package having at least one external lead that is connected to the cathode electrode of said first diode and at least another external lead that is connected to the anode electrode of said second diode, the first and second rated voltages of the first diode and the second diode, respectively, being selected such that the rated voltage of the semiconductor device package is at least 600 volts and a reverse recovery time of the semiconductor device package is less than a reverse recovery time of an equivalently-rated semiconductor device using a single diode.