Light emitting diodes including modifications for submount bonding
First Claim
1. A light emitting device comprising:
- a substrate;
an epitaxial rotation having an epitaxial region thickness, on the substrate, and which includes therein a device region;
a multilayer conductive stack having a multilayer conductive stack thickness and including a barrier layer, on the epitaxial region; and
a passivation layer that extends at least partially on the multilayer conductive stack to define a bonding region on the multilayer conductive stack, the passivation layer also extending across the multilayer stack thickness across the epitaxial region thickness and onto the substrate;
wherein the passivation layer is non-wettable to a bonding material that is used to attach the bonding region to a submount.
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Accused Products
Abstract
Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer. A submount and a bond between the bonding layer and the submount also may be provided.
284 Citations
57 Claims
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1. A light emitting device comprising:
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a substrate;
an epitaxial rotation having an epitaxial region thickness, on the substrate, and which includes therein a device region;
a multilayer conductive stack having a multilayer conductive stack thickness and including a barrier layer, on the epitaxial region; and
a passivation layer that extends at least partially on the multilayer conductive stack to define a bonding region on the multilayer conductive stack, the passivation layer also extending across the multilayer stack thickness across the epitaxial region thickness and onto the substrate;
wherein the passivation layer is non-wettable to a bonding material that is used to attach the bonding region to a submount. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A light emitting device comprising:
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a substrate;
an epitaxial region having an epitaxial region thickness, on the substrate, and which includes therein a device region;
a multilayer conductive stack having a multilayer conductive stack thickness and including a barrier layer, on the epitaxial region; and
a passivation layer that extends at least partially on the multilayer conductive stack to define a bonding region on the multilayer conductive stack, the passivation layer also extending across the multilayerconductive stack thickness, across the epitaxial region thickness and onto the substrate;
wherein the bonding layer includes a bonding layer sidewall and wherein the passivation layer also extends on the bonding layer sidewall.
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27. A light emitting device comprising:
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a substrate;
an epitaxial region having an epitaxial region thickness, on the substrate, and which includes therein a device region;
a multilayer conductive stack having a multilayer conductive stack thickness and including barrier layer on the epitaxial region;
a passivation layer that extends at least partially on the multilayer conductive stack to define a bonding region on the multilayer conductive stack, the passivation layer also extending across the multilayer conductive stack thickness, across the epitaxial region thickness and onto the substrate;
a bonding layer on the bonding region; and
a solder wetting layer between the multilayer conductive stack and the bonding layer. - View Dependent Claims (28)
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29. A light emitting device comprising:
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a substrate;
an epitaxial region having an epitaxial region thickness, on the substrate, and which includes therein a device region;
a multilayer conductive stack having a multilayer conductive stack thickness and including a barrier layer, on the epitaxial region; and
passivation layer that extends at least partially on the multilayer conductive stack to define a bonding region on the multilayer conductive stack, the passivation layer also extending across the multilayer conductive stack thickness, across the epitaxial region thickness and onto the substrate;
wherein the multilayer conductive stack comprises an ohmic layer, a reflector layer and the barrier layer; and
wherein the barrier layer comprises a first layer comprising tungsten and a second layer comprising nickel. - View Dependent Claims (30, 31)
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32. A light emitting device comprising:
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a substrate;
an epitaxial region having an epitaxial region thickness, on the substrate, and which includes therein a device region;
a multilayer conductive stack having a multilayer conductive stack thickness and including a barrier layer, on the epitaxial region; and
passivation layer that extends at least partially on the multilayer conductive stack to define a bonding region on the multilayer conductive stack, the passivation layer also extending across the multilayer conductive stack thickness, across the epitaxial region thickness and onto the substrate;
wherein the barrier layer comprises a first layer comprising tungsten and a second layer comprising nickel. - View Dependent Claims (33, 34)
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35. A light emitting device comprising:
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a substrate;
an epitaxial region having an epitaxial region thickness, on the substrate, and which includes therein a device region;
a multilayer conductive stack having a multilayer conductive stack thickness and including a barrier layer, on the epitaxial region; and
passivation layer that extends at least partially on the multilayer conductive stack to define a bonding region on the multilayer conductive stack, the passivation layer also extending across the multilayer conductive stack thickness, across the epitaxial region thickness and onto the substrate;
a bonding layer on the bonding region; and
a shear strength enhancing layer between the multilayer conductive stack and the bonding layer. - View Dependent Claims (36)
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37. A light emitting device comprising:
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a substrate;
an epitaxial region having an epitaxial region thickness, on the substrate, and which includes therein a device region;
a multilayer conductive stack having a multilayer conductive stack thickness and including a barrier layer, on the epitaxial region; and
passivation layer that extends at least partially on the multilayer conductive stack to define a bonding region on the multilayer conductive stack, the passivation layer also extending across the multilayer conductive stack thickness, across the epitaxial region thickness and onto the substrate;
wherein the multilayer conductive stack comprises;
an ohmic layer on the epitaxial region opposite the substrate;
a reflector layer on the ohmic layer opposite the epitaxial region;
the barrier layer on the reflector layer opposite the ohmic layer;
an adhesion layer on the barrier layer opposite the reflector layer; and
a bonding layer on the adhesion layer opposite the barrier layer. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57)
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Specification