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Light emitting diodes including modifications for submount bonding

  • US 6,740,906 B2
  • Filed: 07/22/2002
  • Issued: 05/25/2004
  • Est. Priority Date: 07/23/2001
  • Status: Expired due to Term
First Claim
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1. A light emitting device comprising:

  • a substrate;

    an epitaxial rotation having an epitaxial region thickness, on the substrate, and which includes therein a device region;

    a multilayer conductive stack having a multilayer conductive stack thickness and including a barrier layer, on the epitaxial region; and

    a passivation layer that extends at least partially on the multilayer conductive stack to define a bonding region on the multilayer conductive stack, the passivation layer also extending across the multilayer stack thickness across the epitaxial region thickness and onto the substrate;

    wherein the passivation layer is non-wettable to a bonding material that is used to attach the bonding region to a submount.

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