Field-effect transistor, circuit configuration and method of fabricating a field-effect transistor
First Claim
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1. A field-effect transistor, comprisinga source region;
- a drain region;
a gate region between said source region and said drain region;
said gate region containing conductive material having at least one through hole formed therein;
at least one nanoelement disposed in said through hole and electrically coupled to said source region and said drain region; and
said nanoelement being arranged and configured such that a conductivity thereof is controlled via said gate region, and said nanoelement forms a channel region.
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Abstract
The gate region of a field effect transistor comprises at least one through hole wherein a nanoelement is provided which is electrically coupled to the source and the drain. The nanoelement may have the conductance thereof controlled by means of the gate, such that the nanoelement forms a channel region of the field effect transistor.
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Citations
16 Claims
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1. A field-effect transistor, comprising
a source region; -
a drain region;
a gate region between said source region and said drain region;
said gate region containing conductive material having at least one through hole formed therein;
at least one nanoelement disposed in said through hole and electrically coupled to said source region and said drain region; and
said nanoelement being arranged and configured such that a conductivity thereof is controlled via said gate region, and said nanoelement forms a channel region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
a first metallically conductive region;
a second metallically conductive region; and
an electrically insulating region between said first metallically conductive region and said second metallically conductive region.
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9. The field-effect transistor according to claim 8, wherein:
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said first metallically conductive region of said nanotube is a metallically conductive carbon nanotube;
said second metallically conductive region of said nanotube is a metallically conductive carbon nanotube; and
said electrically insulating region of said nanotube is a boron nitride nanotube.
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10. The field-effect transistor according to claim 1, wherein said source region contains a material acting catalytically for forming a nanotube.
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11. The field-effect transistor according to claim 10, wherein said material contains at least one metal selected from the group consisting of nickel, cobalt, iron, and an alloy thereof.
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12. The field-effect transistor according to claim 1, wherein said gate region contains at least one material selected from the group consisting of aluminum, titanium, tungsten, gold, silver, and an alloy thereof.
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13. The field-effect transistor according to claim 1, wherein said drain region contains at least one material selected from the group consisting of nickel, cobalt, and an alloy thereof.
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14. A circuit configuration comprising at least one field-effect transistor according to claim 1.
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15. A method of fabricating a field-effect transistor, which comprises:
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forming a source layer on a substrate;
forming an electrically conductive gate layer is on the source layer;
forming at least one through hole in the gate layer;
introducing at least one nanoelement into the through hole, the nanoelement being electrically coupled to the source layer and arranged and configured such that a conductivity thereof is controllable via the gate region, so that the nanoelement forms a channel region; and
applying a drain layer on the gate layer and electrically coupling the drain layer to the nanoelement. - View Dependent Claims (16)
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Specification