Two-mask trench schottky diode
First Claim
1. A Schottky rectifier, comprising:
- a semiconductor structure having first and second opposing faces each extending to define an active semiconductor region and a termination semiconductor region, said semiconductor structure comprising a cathode region of first conductivity type adjacent the first face and a drift region of said first conductivity type adjacent the second face, said drift region having a lower net doping concentration than that of said cathode region;
a plurality of trenches extending from said second face into said semiconductor structure and defining a plurality of mesas within said semiconductor structure, at least one of said trenches being located in each of said active and said termination semiconductor regions;
a first insulating region adjacent said semiconductor structure in said plurality of trenches;
a second insulating region electrically isolating said active semiconductor region to said termination semiconductor region; and
an anode electrode that is adjacent to and forms a Schottky rectifying contact with said semiconductor structure at said second face, said anode electrode being adjacent to said first insulating region in said trenches, and electrically connecting together said plurality of trenches.
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Accused Products
Abstract
A Schottky rectifier includes a semiconductor structure having first and second opposing faces each extending to define an active semiconductor region and a termination semiconductor region. The semiconductor structure includes a cathode region of the first conductivity type adjacent the first face and a drift region of the first conductivity type adjacent the second face. The drift region has a lower net doping concentration than that of the cathode region. A plurality of trenches extends from the second face into the semiconductor structure and defines a plurality of mesas within the semiconductor structure. At least one of the trenches is located in each of the active and the termination semiconductor regions. A first insulating region is located adjacent the semiconductor structure in the plurality of trenches. A second insulating region electrically isolates the active semiconductor region from the termination semiconductor region. An anode electrode is (a) adjacent to and forms a Schottky rectifying contact with the semiconductor structure at the second face and is (b) adjacent to the first insulating region in the trenches. The anode electrode electrically connects together the plurality of trenches.
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Citations
26 Claims
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1. A Schottky rectifier, comprising:
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a semiconductor structure having first and second opposing faces each extending to define an active semiconductor region and a termination semiconductor region, said semiconductor structure comprising a cathode region of first conductivity type adjacent the first face and a drift region of said first conductivity type adjacent the second face, said drift region having a lower net doping concentration than that of said cathode region;
a plurality of trenches extending from said second face into said semiconductor structure and defining a plurality of mesas within said semiconductor structure, at least one of said trenches being located in each of said active and said termination semiconductor regions;
a first insulating region adjacent said semiconductor structure in said plurality of trenches;
a second insulating region electrically isolating said active semiconductor region to said termination semiconductor region; and
an anode electrode that is adjacent to and forms a Schottky rectifying contact with said semiconductor structure at said second face, said anode electrode being adjacent to said first insulating region in said trenches, and electrically connecting together said plurality of trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a Schottky rectifier, comprising:
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forming a semiconductor structure having first and second opposing faces each extending to define an active semiconductor region and a termination semiconductor region, said semiconductor structure comprising a cathode region of first conductivity type adjacent the first face and a drift region of said first conductivity type adjacent the second face, said drift region having a lower net doping concentration than that of said cathode region;
forming a plurality of trenches extending from said second face into said semiconductor structure and defining a plurality of mesas within said semiconductor structure, at least one of said trenches being located in each of said active and said termination semiconductor regions;
forming a first insulating region adjacent said semiconductor structure in said plurality of trenches;
forming a second insulating region electrically isolating said active semiconductor region to said termination semiconductor region; and
forming an anode electrode that is (a) adjacent to and forms a Schottky rectifying contact with said semiconductor structure at said second face and (b) adjacent to said first insulating region in said trenches, said anode electrode electrically connecting together said plurality of trenches. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification