Semiconductor package for three-dimensional mounting, fabrication method thereof, and semiconductor device

• US 6,740,964 B2
• Filed: 08/31/2001
• Issued: 05/25/2004
• Est. Priority Date: 11/17/2000
• Status: Expired due to Term

• Current Assignee: LAPIS Semiconductor Co., Ltd. (ROHM Co., Ltd.)
• Original Assignee: OKI Electric Industry Company Limited
• Inventors: Sasaki, Takaaki
• Primary Examiner(s): Zarneke, David A.
• Application Number:
  US09/942,962
• Publication Number:
  US 20020060361A1
• Time in Patent Office: 998 Days
• Field of Search: 438/598, 438/599, 257/773, 257/786, 257/687, 257/678, 257/684, 257/709, 257/724, 257/686, 257/787, 257/704
• US Class Current: 257/687
• CPC Class Codes: H01L 21/44 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
• CPC Class Codes: H01L 2223/5442 comprising non digital, non alphanumeric information, e.g. symbols
• CPC Class Codes: H01L 2223/54473 for use after dicing
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48095 Kinked
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/1023 the support being an insulating substrate
• CPC Class Codes: H01L 2225/1041 Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
• CPC Class Codes: H01L 2225/1052 Wire or wire-like electrical connections
• CPC Class Codes: H01L 2225/1058 Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 23/28 Encapsulations, e.g. encapsulating layers, coatings, e.g. for protectionH01L23/552 takes precedence; insulating layers for contacts or interconnections H01L23/5329
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/105 : the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H05K 1/145 : Arrangements wherein electric components are disposed between and simultaneously connected to two planar printed circuit boards, e.g. Cordwood modules
• CPC Class Codes: H05K 3/3436 : having an array of bottom contacts, e.g. pad grid array or ball grid array components

Abstract

A semiconductor package for three-dimensional mounting is provided. The package includes a wiring substrate having a first surface on which a first wiring pattern is formed and a second surface on which a second wiring pattern is formed, the first wiring pattern and second wiring pattern being electrically connected to each other; a semiconductor chip placed on the first surface of the wiring substrate and electrically connected to the first wiring pattern; a sealing resin layer sealing the semiconductor chip and the first wiring pattern; a thickness direction wire passing through the sealing resin layer in a thickness direction and having one end electrically connected to the first wiring pattern and the other end exposed at the surface of the sealing resin layer; and a lower surface connecting electrode formed on the second surface of the wiring substrate and electrically connected to the second wiring pattern.

Claims

1. A semiconductor package for three-dimensional mounting, comprising:

a first substrate having an upper surface on which a first metal pattern is formed and a lower surface on which a second metal pattern is formed, said first metal pattern and second metal pattern being electrically connected to each other;

a semiconductor chip which is placed on the upper surface of the first substrate and Is electrically connected to the first metal pattern;

a sealing resin layer which is formed on the upper surface of the first substrate and seals the semiconductor chip and the first metal pattern;

a conductive wire which passes through the resin layer and has one end electrically connected to the first metal pattern and the other end exposed at a top surface of the resin layer, the exposed other end of said conductive wire and the top surface of the resin layer being substantially level with each other, the exposed other end of said conductive wire being adapted to receive a first solder ball directly thereon;

a first electrode which is formed on the lower surface of the first substrate and is electrically connected to the second metal pattern; and

a second solder ball directly bonded to said first electrode

wherein when the first solder ball is received on the exposed other end of said conductive wire, the first solder ball will be disposed in alignment with said second solder ball, and said second solder ball will be electrically connected to the first solder ball, thereby allowing said first substrate to be connected to another substrate, with said first substrate having a same orientation as the another substrate.

2. A semiconductor package according to claim 1, further comprising a second substrate placed over the surface of the resin layer, having an upper surface and a lower surface opposite the upper surface, wherein the second substrate includes a third metal pattern which is electrically connected to the other end of the conductive wire from the lower surface of the second substrate, and a second electrode which Is formed on the upper surface of the second substrate and is electrically connected to the third metal pattern.

3. A semiconductor package according to claim 2, wherein a solder ball is bonded to the second electrode at the second substrate.

4. A semiconductor package according to claim 2, wherein the first electrode and the second electrode are disposed at different positions in horizontal directions.

5. A Semiconductor package according to claim 4, wherein a second semiconductor chip is stacked on the upper surface of the second substrate, the second semiconductor chip being electrically connected to the second electrode and having a function different from that of the semiconductor chip.

6. A semiconductor device in which the semiconductor package for three dimensional mounting of claim 1 is mounted on a mother board.

7. A semiconductor device in which a plurality of semiconductor packages of claim 1 are stacked.

8. A semiconductor device according to claim 7, wherein semiconductor chips of the semiconductor packages of the plurality of semiconductor packages, comprise memory elements.

9. A semiconductor package for three-dimensional mounting, comprising:

a first substrate having an upper surface on which a first metal pattern is formed and a lower surface on which a second metal pattern is formed, said first metal pattern and second metal pattern being electrically connected to each other;

a semiconductor chip which is placed on the upper surface of the first substrate and is electrically connected to the first metal pattern;

a sealing resin layer which is formed on the upper surface of the first substrate and seals the semiconductor chip and the first metal pattern;

a conductive wire which passes through the resin layer and has one end electrically connected to the first metal pattern and the other end exposed at a top surface of the resin layer, the exposed other end of said conductive wire and the top surface of the resin layer being substantially level with each other;

a first electrode which is formed on the lower surface of the first substrate and is electrically connected to the second metal pattern;

a wiring pattern formed over the sealing resin layer and being electrically connected to the conductive wire, said wiring pattern being comprised of at least a first wiring and a second wiring, said first wiring being disposed closer to a center of the semiconductor package than said second wiring is, and said second wiring being disposed closer toward a periphery of the semiconductor package than said first wiring is,

wherein said wiring pattern comprises a plurality of said first wirings, and a plurality of said second wirings, said first wirings and said second wirings being alternatingly arranged.

10. A semiconductor package for three-dimensional mounting, comprising:

a first substrate having an upper surface on which a first metal pattern is formed and a lower surface on which a second metal pattern is formed, said first metal pattern and second metal pattern being electrically connected to each other;

a semiconductor chip which is placed on the upper surface of the first substrate and is electrically connected to the first metal pattern;

a sealing resin layer which is formed on the upper surface of the first substrate and seals the semiconductor chip and the first metal pattern;

a conductive wire which passes through the resin layer and has one end electrically connected to the first metal pattern and the other end exposed at a top surface of the resin layer, the exposed other end of said conductive wire and the top surface of the resin layer being substantially level with each other;

a first electrode which is formed on the lower surface of the first substrate and is electrically connected to the second metal pattern;

a wiring pattern formed over the sealing resin layer and being electrically connected to the conductive wire, said wiring pattern being comprised of Cu; and

a second electrode formed on the wiring pattern, the second electrode including an Ni layer in electrical connection with the wiring pattern, and an Au layer disposed on the Ni layer.