High frequency power amplifier and wireless communication module

• US 6,741,125 B2
• Filed: 01/08/2003
• Issued: 05/25/2004
• Est. Priority Date: 12/12/2001
• Status: Expired due to Term

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Hitachi, Ltd.
• Inventors: Arai, Satoshi, Ohyama, Yasushi, Matsudaira, Nobuhiro, Maruyama, Masashi, Furuya, Tomio, Sekiguchi, Hitoshi, Shibuya, Tsuyoshi
• Primary Examiner(s): Mottola, Steven J
• Application Number:
  US10/337,819
• Publication Number:
  US 20030137347A1
• Time in Patent Office: 503 Days
• Field of Search: 330/66, 330/127, 330/129, 330/133, 330/297, 330/285
• US Class Current: 330/66
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H03G 3/004 Control by varying the supply voltage
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04
• CPC Class Codes: H03G 3/3047 for intermittent signals, e.g. burst signals

Abstract

The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.

Claims

1. A wireless communication module comprising:

an insulated board including a plurality of conductor layers and a plurality of dielectric layers each of which is provided between the conductor layers;

a high frequency power amplifier mounted on the insulated board and including;

power amplifying transistors;

a power control circuit which supplies a power supply voltage to the power amplifying transistors;

a bias voltage generating circuit which generates a bias voltage applied to control terminals of the power amplifying transistors, and

said wireless communication module further comprising a potential detector including a first conductor layer which is one of the plurality of conductor layers and to which an output of the high frequency power amplifier is applied and a second conductor layer which is one of the plurality of conductor layers and which includes a part arranged so as to be opposed to the first conductor layer, and adapted to detect a level of the output of the high frequency power amplifier,

wherein the bias voltage generating circuit generates the bias voltage, based on the power supply voltage outputted from the power control circuit.

3. A wireless communication module according to claim 1, wherein the first conductor layer is a strip layer formed on the insulated board and the second conductor layer is a conductor layer formed in the inside of the insulated board.

2. A wireless communication module comprising:

an insulated board including a plurality of conductor layers and a plurality of dielectric layers each of which is provided between the conductor layers;

a high frequency power amplifier mounted on the insulated board and including;

power amplifying transistors which are coupled to each other in series so as to amplify a first signal;

a power control circuit which receives a power voltage and a second signal and which supplies a power supply voltage in accordance with the second signal, to the power amplifying transistors;

a bias voltage generating circuit which generates a bias voltage to be applied to control terminals of the power amplifying transistors; and

said wireless communication module further comprising a potential detector including a first conductor layer which is one of the plurality of conductor layers and to which an output of the high frequency power amplifier is applied and a second conductor layer which is one of the plurality conductor layers and which includes a part arranged so as to be opposed to the first conductor layer,

wherein a detect signal, which is provided from the second conductor layer, is used for forming the second signal in combination with data to be transmitted, and

wherein the bias voltage generating circuit generates the bias voltage, based on the power supply voltage outputted from the power control circuit.

4. A wireless communication module according to claim 2, wherein the first conductor layer is a strip layer formed on the insulated board and the second conductor layer is a conductor formed in the inside of the insulated board.

5. A wireless communication module according to claim 2, wherein the second signal is formed by comparing a signal based on the detect signal with a signal based on the data to be transmitted.

6. A wireless communication module according to claim 5, wherein each of the power amplifying transistors is a MOSFET.

7. A wireless communication module according to claim 6, wherein the first conductor layer is a strip layer formed on the insulated board and the second conductor layer is a conductor layer formed in the inside of the insulated board.