Process for producing aluminum oxide films at low temperatures

• US 6,743,475 B2
• Filed: 10/23/2001
• Issued: 06/01/2004
• Est. Priority Date: 10/23/2000
• Status: Expired due to Term

• Current Assignee: ASM International NV
• Original Assignee: ASM International NV
• Inventors: Skarp, Jarmo, Asikainen, Timo, Linnermo, Mervi
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US10/003,749
• Publication Number:
  US 20020106451A1
• Time in Patent Office: 952 Days
• Field of Search: 427/255.29, 427/255.31, 117/88
• US Class Current: 427/255.31
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

A process for producing aluminum oxide thin films on a substrate by the ALD method comprises the steps of bonding a vaporizable aluminum compound to a growth substrate, and converting the bonded organoaluminum compound to aluminum oxide. The bonded aluminum compound is converted to aluminum oxide by contacting it with a reactive vapor source of oxygen other than water, and the substrate is kept at a temperature of less than 190° C. during the growth process. By means of the invention it is possible to produce films of good quality at low temperatures. The dielectric thin films having a dense structure can be used for passivating surfaces that do not endure high temperatures. Such surfaces include, for example, polymer films such as organic electroluminescent displays. Further, when a water-free oxygen source is used, surfaces that are sensitive to water can be passivated.

Claims

1. A process of depositing a thin film of aluminum oxide on a substrate in a reaction chamber by an atomic layer deposition (ALD) process comprising a plurality of cycles, each cycle comprising:

supplying a first reactant comprising a gaseous aluminum compound, wherein no more than about one monolayer chemisorbs on the substrate; and

supplying a gaseous second reactant comprising a source of oxygen other than water, wherein the second reactant converts the adsorbed portion of the first reactant on the substrate to aluminum oxide,

wherein the substrate is maintained at a temperature of less than 190°

C. during the ALD process.

2. The process of claim 1, wherein the gaseous aluminum compound comprises at least one alkyl group bound to aluminum.

3. The process of claim 1, wherein the gaseous aluminum compound has a formula selected from the group consisting of L¹AlX₂ (I), L¹L²AlX (II) and L¹L²L³Al (III), wherein X is selected from the group consisting of H, F, Cl, B, I, and an alkoxy group, and L¹, L² and L³ are linear or branched saturated or unsaturated hydrocarbons.

4. The process of claim 1, wherein the gaseous second reactant comprises one or more compounds selected from the group consisting of ozone, organic ozonides, oxygen atoms with unpaired electrons, organic peroxides and organic peracids.

5. The process of claim 1, wherein the gaseous second reactant comprises one or more organic peroxides with the formula R¹—

O—

O—

R² (IV), wherein R¹ is a linear, branched or cyclic organic ligand, and wherein R² is hydrogen or a linear, branched or cyclic organic ligand.

6. The process of claim 1, wherein the substrate is maintained at a temperature of less than 150°

C. during the ALD process.

7. The process of claim 6, wherein the substrate is maintained at a temperature of less than 140°

C. during the ALD process.

8. The process of claim 7, wherein the substrate is maintained at a temperature of less than 130°

C. during the ALD process.

9. The process of claim 1, wherein the ALD cycle is repeated a sufficient number of times to deposit a layer of aluminum oxide with a thickness of between about 5 nm and about 1000 nm on the substrate.

10. The process of claim 9, wherein the ALD cycle is repeated a sufficient number of times to deposit a layer of aluminum oxide with a thickness of about 25 nm to about 75 nm.

11. The process of claim 1, wherein the substrate comprises an organic light emitting layer.

12. The process of claim 1, wherein the substrate comprises a surface acoustic wave filter.

13. The process of claim 1, wherein the substrate comprises an organic solar cell layer.

14. A process of depositing a thin film of aluminum oxide on a substrate that is sensitive to moisture by an atomic layer deposition (ALD) process comprising a plurality of cycles, each cycle comprising:

supplying a first reactant comprising a gaseous organic aluminum compound, wherein no more than about one monolayer chemisorbs on the substrate; and

supplying a gaseous second reactant comprising a source of oxygen other than water, wherein the second reactant converts the adsorbed portion of the first reactant on the substrate to aluminum oxide,

wherein the substrate is maintained at a temperature of less than 190°

C. during the ALD process.

15. The process of claim 14, wherein the thin film protects the substrate from moisture.

16. The process of claim 14, wherein the thin film is deposited on an aluminum oxide layer that was previously deposited by chemical vapor deposition or physical vapor deposition.

17. A process of depositing a thin film of aluminum oxide on a substrate that is sensitive to the atmosphere by an atomic layer deposition (ALD) process comprising a plurality of cycles, each cycle comprising:

supplying a first reactant comprising a gaseous aluminum compound, wherein no more than about one monolayer chemisorbs on the substrate; and

supplying gaseous ozone, wherein the ozone converts the adsorbed portion of the first reactant on the substrate to aluminum oxide,

wherein the substrate is maintained at a temperature of less than 190°

C. during the ALD process.

18. The process of claim 17, wherein the thin film protects the substrate from the atmosphere.

19. The process of claim 17, wherein the thin film is deposited on an aluminum oxide layer that was previously deposited by chemical vapor deposition or physical vapor deposition.

20. A process of depositing a thin film of aluminum oxide on a substrate in a reaction chamber by an atomic layer deposition (ALD) process comprising a plurality of cycles, each cycle comprising:

supplying a first reactant comprising a gaseous aluminum compound, wherein no more than about one monolayer chemisorbs on the substrate; and

supplying a gaseous second reactant comprising a source of oxygen selected from the group consisting of ozone, organic ozonides, oxygen atoms with unpaired electrons, organic peroxides and organic peracids, wherein the second reactant converts the adsorbed portion of the first reactant on the substrate to aluminum oxide,

wherein the substrate is maintained at a temperature of less than 190°

C. during the ALD process.