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Process for producing aluminum oxide films at low temperatures

  • US 6,743,475 B2
  • Filed: 10/23/2001
  • Issued: 06/01/2004
  • Est. Priority Date: 10/23/2000
  • Status: Expired due to Term
First Claim
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1. A process of depositing a thin film of aluminum oxide on a substrate in a reaction chamber by an atomic layer deposition (ALD) process comprising a plurality of cycles, each cycle comprising:

  • supplying a first reactant comprising a gaseous aluminum compound, wherein no more than about one monolayer chemisorbs on the substrate; and

    supplying a gaseous second reactant comprising a source of oxygen other than water, wherein the second reactant converts the adsorbed portion of the first reactant on the substrate to aluminum oxide, wherein the substrate is maintained at a temperature of less than 190°

    C. during the ALD process.

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