Transparent conductive stratiform coating of indium tin oxide

• US 6,743,488 B2
• Filed: 05/09/2001
• Issued: 06/01/2004
• Est. Priority Date: 05/09/2001
• Status: Expired due to Term

• Current Assignee: Eastman Performance Films, LLC (Eastman Chemical Company)
• Original Assignee: CPFilms Inc. (Eastman Chemical Company)
• Inventors: Patel, Hitesh, Memarian, Hassan
• Primary Examiner(s): Pyon, Harold
• Assistant Examiner(s): HON, SOW FUN
• Application Number:
  US09/851,321
• Publication Number:
  US 20030035906A1
• Time in Patent Office: 1,119 Days
• Field of Search: 428/212, 428/1.4, 428/688, 428/689, 428/697, 428/699, 428/701, 428/702, 428/938, 428/480, 428/432, 428/428, 428/426, 428/1.33
• US Class Current: 428/1.4
• CPC Class Codes: C09K 2323/03 Viewing layer characterised by chemical composition
• CPC Class Codes: C09K 2323/035 Ester polymer, e.g. polycarbonate, polyacrylate or polyester
• CPC Class Codes: C09K 2323/04 Charge transferring layer characterised by chemical composition, i.e. conductive
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/022475 composed of indium tin oxide [ITO]
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/816 Multilayers, e.g. transparent multilayers
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree

Abstract

A transparent electrically conductive device which includes an indium tin oxide film is improved by providing an indium tin oxide film which contains a graded stack of individual indium tin oxide layers wherein the atomic percent of tin in the layers can be individually selected. Each indium tin oxide layer of the film contains 1-99 atomic percent tin. Each layer is made by a physical vapor deposition process or by sputter coating. Preferably the film which contains a plurality of indium tin oxide layers is applied to a transparent flexible substrate such as a polymeric sheet. Optional primer layers, hardcoat layers and topcoat layers may be included in the device.

Claims

1. In a multi-layered electronic device which comprises a transparent substrate coated with at least one transparent electrically conductive film of indium tin oxide, wherein the improvement comprises:

the at least one indium tin oxide film has a proportion of indium to tin atoms which is nonuniform, having no continuous gradient of compositional change, throughout the entire thickness of the film, such that the indium and tin atoms are distributed throughout the thickness of said film to form a plurality of electrically conductive indium tin oxide layers, at least one surface of each of the electrically conductive layers is in contact with a surface of one of the other said layers, each of said layers having a finite thickness of 5-10,000 angstroms, wherein the proportion of indium to tin is substantially uniform throughout said finite thickness;

wherein the proportion of indium to tin in at least one of said layers is different from the proportion of indium to tin in another of said layers, the proportions of indium and tin adding up to unity in each layer with respect to the total amount of indium and tin contained in each layer.

2. The device of claim 1 wherein the atomic percent of tin based upon the total content of indium and tin in each of the indium tin oxide layers is 1 atomic percent-99 atomic percent.

3. The device of claim 2 wherein said transparent substrate is a flexible polymeric sheet.

4. The device of claim 3 wherein said flexible polymeric sheet is selected from the group consisting of polyester, polysulfone, polycarbonate and polyurethane.

5. The device of claim 4 wherein said polyester is polyethylene terephthalate.

6. The device of claim 3 wherein said film has a sheet resistance which varies from 1 to 10,000 ohms per square.

7. The device of claim 6 which has a visible light transparency which is greater than 75%.

8. The device of claim 5 wherein said polyethylene terephthalate is heat stabilized.

9. The device of claim 4 which includes a scratch resistant hardcoat layer located above and/or below said substrate whereby a hardcoat layer is interposed between said indium tin oxide film and said substrate.

10. The device of claim 9 wherein said hardcoat has a thickness in the range of 5,000 to 100,000 angstroms.

11. The device of claim 9 which includes a protective topcoat layer on a top surface of said device and/or a protective topcoat layer on a bottom surface of said device.

12. The device of claim 11 which comprises the sequence of layers:

protective topcoat/substrate/hardcoat/primer/indium tin oxide film/protective topcoat;

said primer of said primer layer being adhesive primer or a barrier primer.

13. The device of claim 11 which includes a primer layer in between any of the layers of said multilayered device;

said primer of said primer layer being adhesion primer or barrier primer.

14. The device of claim 13 which includes a plurality of primer layers.

15. The device of claim 14 wherein said adhesion primer layer is metal, metal nitride, metal oxide or metal carbide and said barrier primer layer is an organic compound.

16. The device of claim 15 wherein said adhesion primer layer has a thickness in the range of 5-10,000 angstroms and the barrier primer layer has a thickness in the range of 50-10,000 angstroms.

17. The device of claim 15 wherein the adhesion primer layer is selected from the group consisting of metal, oxide of said metal and nitride of said metal;

wherein said metal is selected from the group consisting of W, Ti, Cr, Ni, Cu, Zr, Hf, Ta, Al and Si.

18. The device of claim 17 wherein said adhesion primer layer is selected from the group consisting of TiO₂, Al₂O₃, Ta₂O₅, IZO, TiN, ZrN, TiC and W₂C.

19. The device of claim 13 wherein said at least one indium tin oxide film comprises a plurality of indium tin oxide films.

20. The device of claim 19 wherein said plurality of films includes at least one pair of films.

21. The device of claim 13 which contains a single indium tin oxide film.

22. The device of claim 21 wherein said film consists of a first indium tin oxide layer next to a second indium tin oxide layer wherein said second indium tin oxide layer is adjacent to said substrate or said primer layer;

or said second indium tin oxide layer is adjacent to said hardcoat and said hardcoat is adjacent to said substrate.

23. The device of claim 8 wherein said at least one film consists of a first indium tin oxide layer next to a second indium tin oxide layer;

said device including a scratch resistant hardcoat layer located above and/or below said substrate; and

a primer layer next to one or both sides of said film and/or next to one or both sides of said substrate, or said hardcoat layer or layers.

24. The device of claim 23 which contains a single indium tin oxide film.

25. The device of claim 24 wherein said indium tin oxide film has a thickness of 10-100,000 angstroms, a sheet resistance of 1-10,000 ohms per square and said device a visible light transparency which is greater than 75%.

26. The device of claim 8 wherein said at least one film consists of a lower indium tin oxide layer, a middle indium tin oxide layer and an upper indium tin oxide layer;

said middle indium tin oxide layer being coated onto a top surface of said lower indium tin oxide layer and said upper indium tin oxide layer being coated onto a top surface of said middle indium tin oxide layer;

said device including a scratch resistant hardcoat layer located above and/or below said substrate; and

a primer layer next to one or both sides of said film and/or next to one or both sides of said substrate or said hardcoat layer or layers.

27. The device of claim 23 which contains a single indium tin oxide film.

28. The device of claim 26 which includes an organic or inorganic protective topcoat layer on a top surface of said device and/or a protective topcoat layer on a bottom surface of said device.

29. The device of claim 28 wherein said protective topcoat layer is metal, metal oxide, metal nitride or metal carbide.

30. The device of claim 29 wherein said protective topcoat is:

metal selected from the group consisting of Pd, Au, Ni and Cr;

metal alloy selected from the group consisting of NiCr, AuAg, CuPd and CuAg;

metal oxide selected from the group consisting of SiO₂, TiO₂, Al₂O₃, IZO and Ta₂O₅;

metal nitride selected from the group consisting of TiN and Si₃N₄;

metal carbide selected from the group consisting of TiC and W₂C;

or

combinations of said metal, metal alloy, metal oxide, metal nitride or metal carbide.

31. The device of claim 30 wherein said protective topcoat has a thickness in the range of 5-5,000 angstroms.

32. The device of claim 28 wherein said protective topcoat is organic.

33. The device of claim 32 wherein the organic topcoat is applied in the form of an organo-titanium based solution.

34. The device of claim 33 wherein the organic topcoat has a thickness in the range of 10-100,000 angstroms.

35. The device of claim 4 wherein said at least one indium tin oxide film includes an indium tin oxide film above said substrate and an indium tin oxide film below said substrate whereby said substrate is sandwiched between said film above said substrate and said film below said substrate;

said device further including one or more scratch resistant hardcoat layers, one or more primer layers and a protective topcoat layer on a top surface of said device and/or a protective topcoat layer on a bottom surface of said device.

36. An electronic apparatus which comprises the device of claim 1 as a component thereof;

said electronic apparatus being selected from the group consisting of transparent touch panels, electroluminescent lamps, personal digital assistants, pen entry devices, liquid crystal displays and organic light emitting devices.

37. The device of claim 4 wherein the thickness of each indium tin oxide layer of said at least one film is at least about 50 angstroms.

38. The device of claim 5 which contains a single indium tin oxide film;

said single indium tin oxide film having a lower indium tin oxide layer, a middle indium tin oxide layer and an upper indium tin oxide layer;

said middle indium tin oxide layer being coated onto a top surface of said lower indium tin oxide layer and said upper indium tin oxide layer being coated onto a top surface of said middle indium tin oxide layer;

said upper and lower indium tin oxide layers containing 95 atomic percent indium and 5 atomic percent tin; and

said middle layer containing 90 atomic percent indium and 10 atomic percent tin wherein the atomic percent of indium and tin in each layer is based upon the total content of indium and tin in said each layer.

39. The device of claim 5 which contains a single indium tin oxide film;

said single indium tin oxide film having a lower indium tin oxide layer, a middle indium tin oxide layer and an upper indium tin oxide layer;

said middle indium tin oxide layer being coated onto a top surface of said lower indium tin oxide layer and said upper indium tin oxide layer being coated onto a top surface of said middle indium tin oxide layer;

said upper and lower indium tin oxide layers containing 80 atomic percent indium and 20 atomic percent tin; and

said middle indium tin oxide layer containing 90 atomic percent indium and 10 atomic percent tin;

wherein the atomic percent of indium and tin in each layer is based upon the total content of indium and tin in said each layer.

40. The device of claim 5 which contains a single indium tin oxide film;

said single indium tin oxide film having a lower indium tin oxide layer, a middle indium tin oxide layer and an upper indium tin oxide layer;

said middle indium tin oxide layer being coated onto a top surface of said lower indium tin oxide layer and said upper indium tin oxide layer being coated onto a top surface of said middle indium tin oxide layer;

said middle and lower indium tin oxide layers containing 90 atomic percent indium and 10 atomic percent tin; and

said upper indium tin oxide layer containing 80 atomic percent indium and 20 atomic percent tin;

said atomic percent of indium and tin in each layer being based upon the total content of indium and tin in said each layer.

41. The device of claim 5 which contains a single indium tin oxide film;

said single indium tin oxide film having a lower indium tin oxide layer, a middle indium oxide layer and an upper indium tin oxide layer;

said middle indium tin oxide layer being coated onto a top surface of said lower indium tin oxide layer and said upper indium tin oxide layer being coated onto a top surface of said middle indium tin oxide layer;

said upper and lower indium tin oxide layers containing 90 atomic percent indium and 10 atomic percent tin; and

said middle indium tin oxide layer containing 80 atomic percent indium and 20 atomic percent tin;

wherein the atomic percent of indium and tin in each layer is based upon the total content of indium and tin in said each layer.