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Method for fabricating a set of distributed feedback semiconductor lasers

  • US 6,743,648 B2
  • Filed: 06/13/2002
  • Issued: 06/01/2004
  • Est. Priority Date: 06/14/2001
  • Status: Active Grant
First Claim
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1. A method for fabricating a plurality of distributed feedback (DFB) semiconductor laser devices on a wafer surface, said DFB semiconductor laser devices including respective active layers having unique emission wavelengths different from one another, said method comprising the steps of:

  • forming the active layers;

    measuring peak gain wavelengths of said active layers formed on said wafer surface;

    determining respective periods of diffraction gratings for different portions of said active layers so as to allow detuning amounts of said DFB laser devices to fall within a specified range, based on a distribution of said measured peak gain wavelengths within said wafer surface;

    forming diffraction gratings having respective periods; and

    forming an embedded layer, wherein said step of forming the respective diffraction gratings is preformed after said step of forming the active layers.

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