Method of improving moisture resistance of low dielectric constant films
First Claim
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1. A method for depositing a low dielectric constant material on a substrate, comprising:
- depositing a silicon oxide based material comprising carbon-silicon bonds and a carbon content of between about 1% and about 50% by atomic weight on a substrate, wherein the silicon oxide based material is located between conductive interconnects or conductive contacts/vias;
exposing the silicon oxide based material to a surface modifying surfactant; and
planarizing the silicon oxide based material.
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Abstract
A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.
111 Citations
29 Claims
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1. A method for depositing a low dielectric constant material on a substrate, comprising:
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depositing a silicon oxide based material comprising carbon-silicon bonds and a carbon content of between about 1% and about 50% by atomic weight on a substrate, wherein the silicon oxide based material is located between conductive interconnects or conductive contacts/vias;
exposing the silicon oxide based material to a surface modifying surfactant; and
planarizing the silicon oxide based material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for depositing a low dielectric constant material, comprising:
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depositing a silicon oxide based material comprising carbon-silicon bonds and a carbon content of between about 1% and about 50% by atomic weight on a substrate by reacting one or more silicon compounds that contain carbon with an oxidizing gas at an RF power level between about 10 W and about 250 W, wherein the silicon oxide based material is located between conductive interconnects or conductive contacts/vias;
exposing the silicon oxide-based material to a surface modifying surfactant at a temperature from about 10°
C. to about 100°
C.; and
chemical mechanical polishing the silicon oxide based material. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A method for processing a substrate, comprising:
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depositing a first material;
depositing a low dielectric constant material adjacent the first material, wherein the low dielectric constant material is a silicon oxide based material comprising carbon-silicon bonds and a carbon content of between about 1% and about 50% by atomic weight on a substrate;
exposing the silicon oxide based material to a surface modifying surfactant; and
planarizing the silicon oxide based material; and
thendepositing a second material adjacent the low dielectric constant material. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification