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Non-volatile memory using ferroelectric gate field-effect transistors

  • US 6,744,087 B2
  • Filed: 09/27/2002
  • Issued: 06/01/2004
  • Est. Priority Date: 09/27/2002
  • Status: Expired due to Term
First Claim
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1. A semiconductor device, comprising:

  • a field-effect transistor (FET) formed on a silicon substrate, the FET including a drain region and a source region; and

    a ferroelectric gate field-effect transistor (FeGFET) for storing a logical state of the semiconductor device, the FeGFET comprising;

    a gate electrode formed on an upper surface of the substrate and in electrical contact with one of the drain region and the source region of the FET;

    a ferroelectric gate dielectric layer formed on an upper surface of the gate electrode;

    an electrically conductive channel layer formed on an upper surface of the ferroelectric gate dielectric layer; and

    first and second drain/source electrodes, the first and second drain/source electrodes being formed on and electrically contacting the channel layer at laterally opposing ends of the channel layer;

    wherein the ferroelectric gate dielectric layer is selectively polarizable in response to a potential applied between the gate electrode and at least one of the first and second drain/source electrodes.

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