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Atomic layer doping apparatus and method

  • US 6,746,934 B2
  • Filed: 11/22/2002
  • Issued: 06/08/2004
  • Est. Priority Date: 08/31/2000
  • Status: Expired due to Term
First Claim
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1. A method of operating an atomic layer doping apparatus, said doping apparatus comprising a first doping region and a second doping region, said method comprising the steps of:

  • positioning a wafer in said first doping region;

    introducing a first dopant species into said first doping region and depositing said first dopant species on said wafer as a first atomic monolayer, said first atomic monolayer being deposited by atomic layer deposition;

    moving said wafer from said first doping region to said second doping region, said first and second doping regions being separated from one another by an inert gas curtain; and

    introducing dopants from said first atomic monolayer into said wafer in said second doping region.

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